Deposition and characterization of germanium sulphide glass planar waveguides

C. C. Huang; D. W. Hewak; J. V. Badding

doi:10.1364/OPEX.12.002501

Abstract

Germanium sulphide glass thin films have been deposited on CaF2 and Schott N-PSK58 glass substrates directly by means of chemical vapor deposition (CVD). The deposition rate of germanium sulphide glass film by this CVD process is estimated about 12 µm/hr at 500°C. These films have been characterized by micro-Raman spectroscopy, X-ray diffraction (XRD), and scanning electron microscopy (SEM). Their transmission range extends from 0.5µm to 7µm measured by UV-VIS-NIR and FT-IR spectroscopy. The refractive index of germanium sulphide glass film measured by prism coupling technique was 2.093±0.008 and the waveguide loss measured at 632.8nm by He-Ne laser was 2.1±0.3 dB/cm.

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References

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Year
Author
Publication

A. K. Mairaj, P. Hua, H. N. Rutt, and D. W. Hewak, “Fabrication and characterization of continuous wave direct UV (λ=244 nm) written channel waveguides in chalcogenide (Ga:La:S) glass,” J. Lightwave Technol. 20,1578–84 (2002).
[Crossref]
Keiji Tanaka, “Photoinduced process in Chalcogenide glass,” Current Opinion in Solid State & Materials Science 1, 567 (1996).
[Crossref]
D. Marchese, M. De Sario, A. Jha, A. K. Kar, and E. C. Smith, “Highly nonlinear GeS2-based chalcogenide glass for all-optical twin-core-fibre switching,” J. Opt. Soc. Am. 15, 2361 (1998).
[Crossref]
E. Marquez, T. Wagner, J.M. Gonzalez-Leal, A.M. Bernal-Oliva, R. Prieto-Alcon, R. Jimenez-Garay, and P.J.S. Ewen, “Controlling the optical constant of thermally-evaporated Ge10Sb30S60 chalcogenide glass films by photodoping with silver,” J. Non-Cryst. Solids 274, 62–68 (2000).
[Crossref]
S. Ramachandran and S.G. Bishop, “Excitation of Er3+ emission by host glass absorption in sputtered films of Er-doped Ge10As40Se25S25 glass,” Appl. Phys. Lett. 73, 3196 (1998),
[Crossref]
D.S. Gill, R.W. Eason, C. Zaldo, H.N. Rutt, and N.A. Vainos, “Characterisation of Ga-La-S chalcogenide glass thin-film optical waveguides, fabricated by pulsed laser deposition,” J. Non-Cryst. Solids 191, 321–326 (1995).
[Crossref]
J. Xu and R.M. Almeida, “Preparation and Characterization of Germanium Sulphide Based Sol-Gel Planar Waveguides,” J. Sol-Gel Sci. Technol. 19, 243–248 (2000).
[Crossref]
P. J. Melling, “Alternative Methods of Preparing Chalcogenide Glasses,” Ceramic Bulletin 63, 1427–1429 (1984).
E. Sleeckx, P. Nagels, R. Callaerts, and M. Vanroy, “Plasma-enhanced CVD of amorphous GexS1-x and GexSe1-x films,” J. de Physique IV 3, 419–426 (1993).
[Crossref]
A. Kovolov, “Photo-induced Metastability in Amorphous Semiconductors,” 2003.
Ihsan Barin, “Thermochemical Data of Pure Substances,” third edition, 1995.
I. P. Kotsalas and C. Raptis, “High-temperature structural phase transitions of GexS1-x alloy studied by Raman spectroscopy,” Phys. Rev. B 64, 125210 (2001).
[Crossref]
J.S. Sanghera and I.D. Aggarwal, “Active and passive chalcogenide glass optical fibers for IR applications: a review,” J. Non-Cryst. Solids 256, 6–16 (1999).
[Crossref]
R. Todorov, Tz. Iliev, and K. Petkov, “Light-induced changes in the optical properties of thin films of Ge-S-Bi(Tl,In) chalcogenides,” J. Non-Cryst. Solids 326, 263–267 (2003).
[Crossref]

2003 (1)

R. Todorov, Tz. Iliev, and K. Petkov, “Light-induced changes in the optical properties of thin films of Ge-S-Bi(Tl,In) chalcogenides,” J. Non-Cryst. Solids 326, 263–267 (2003).
[Crossref]

2002 (1)

A. K. Mairaj, P. Hua, H. N. Rutt, and D. W. Hewak, “Fabrication and characterization of continuous wave direct UV (λ=244 nm) written channel waveguides in chalcogenide (Ga:La:S) glass,” J. Lightwave Technol. 20,1578–84 (2002).
[Crossref]

2001 (1)

I. P. Kotsalas and C. Raptis, “High-temperature structural phase transitions of GexS1-x alloy studied by Raman spectroscopy,” Phys. Rev. B 64, 125210 (2001).
[Crossref]

2000 (2)

E. Marquez, T. Wagner, J.M. Gonzalez-Leal, A.M. Bernal-Oliva, R. Prieto-Alcon, R. Jimenez-Garay, and P.J.S. Ewen, “Controlling the optical constant of thermally-evaporated Ge10Sb30S60 chalcogenide glass films by photodoping with silver,” J. Non-Cryst. Solids 274, 62–68 (2000).
[Crossref]

J. Xu and R.M. Almeida, “Preparation and Characterization of Germanium Sulphide Based Sol-Gel Planar Waveguides,” J. Sol-Gel Sci. Technol. 19, 243–248 (2000).
[Crossref]

1999 (1)

J.S. Sanghera and I.D. Aggarwal, “Active and passive chalcogenide glass optical fibers for IR applications: a review,” J. Non-Cryst. Solids 256, 6–16 (1999).
[Crossref]

1998 (2)

D. Marchese, M. De Sario, A. Jha, A. K. Kar, and E. C. Smith, “Highly nonlinear GeS2-based chalcogenide glass for all-optical twin-core-fibre switching,” J. Opt. Soc. Am. 15, 2361 (1998).
[Crossref]

S. Ramachandran and S.G. Bishop, “Excitation of Er3+ emission by host glass absorption in sputtered films of Er-doped Ge10As40Se25S25 glass,” Appl. Phys. Lett. 73, 3196 (1998),
[Crossref]

1996 (1)

Keiji Tanaka, “Photoinduced process in Chalcogenide glass,” Current Opinion in Solid State & Materials Science 1, 567 (1996).
[Crossref]

1995 (1)

D.S. Gill, R.W. Eason, C. Zaldo, H.N. Rutt, and N.A. Vainos, “Characterisation of Ga-La-S chalcogenide glass thin-film optical waveguides, fabricated by pulsed laser deposition,” J. Non-Cryst. Solids 191, 321–326 (1995).
[Crossref]

1993 (1)

E. Sleeckx, P. Nagels, R. Callaerts, and M. Vanroy, “Plasma-enhanced CVD of amorphous GexS1-x and GexSe1-x films,” J. de Physique IV 3, 419–426 (1993).
[Crossref]

1984 (1)

P. J. Melling, “Alternative Methods of Preparing Chalcogenide Glasses,” Ceramic Bulletin 63, 1427–1429 (1984).

Aggarwal, I.D.

J.S. Sanghera and I.D. Aggarwal, “Active and passive chalcogenide glass optical fibers for IR applications: a review,” J. Non-Cryst. Solids 256, 6–16 (1999).
[Crossref]

Almeida, R.M.

J. Xu and R.M. Almeida, “Preparation and Characterization of Germanium Sulphide Based Sol-Gel Planar Waveguides,” J. Sol-Gel Sci. Technol. 19, 243–248 (2000).
[Crossref]

Barin, Ihsan

Ihsan Barin, “Thermochemical Data of Pure Substances,” third edition, 1995.

Bernal-Oliva, A.M.

E. Marquez, T. Wagner, J.M. Gonzalez-Leal, A.M. Bernal-Oliva, R. Prieto-Alcon, R. Jimenez-Garay, and P.J.S. Ewen, “Controlling the optical constant of thermally-evaporated Ge10Sb30S60 chalcogenide glass films by photodoping with silver,” J. Non-Cryst. Solids 274, 62–68 (2000).
[Crossref]

Bishop, S.G.

S. Ramachandran and S.G. Bishop, “Excitation of Er3+ emission by host glass absorption in sputtered films of Er-doped Ge10As40Se25S25 glass,” Appl. Phys. Lett. 73, 3196 (1998),
[Crossref]

Callaerts, R.

E. Sleeckx, P. Nagels, R. Callaerts, and M. Vanroy, “Plasma-enhanced CVD of amorphous GexS1-x and GexSe1-x films,” J. de Physique IV 3, 419–426 (1993).
[Crossref]

De Sario, M.

D. Marchese, M. De Sario, A. Jha, A. K. Kar, and E. C. Smith, “Highly nonlinear GeS2-based chalcogenide glass for all-optical twin-core-fibre switching,” J. Opt. Soc. Am. 15, 2361 (1998).
[Crossref]

Eason, R.W.

D.S. Gill, R.W. Eason, C. Zaldo, H.N. Rutt, and N.A. Vainos, “Characterisation of Ga-La-S chalcogenide glass thin-film optical waveguides, fabricated by pulsed laser deposition,” J. Non-Cryst. Solids 191, 321–326 (1995).
[Crossref]

Ewen, P.J.S.

E. Marquez, T. Wagner, J.M. Gonzalez-Leal, A.M. Bernal-Oliva, R. Prieto-Alcon, R. Jimenez-Garay, and P.J.S. Ewen, “Controlling the optical constant of thermally-evaporated Ge10Sb30S60 chalcogenide glass films by photodoping with silver,” J. Non-Cryst. Solids 274, 62–68 (2000).
[Crossref]

Gill, D.S.

D.S. Gill, R.W. Eason, C. Zaldo, H.N. Rutt, and N.A. Vainos, “Characterisation of Ga-La-S chalcogenide glass thin-film optical waveguides, fabricated by pulsed laser deposition,” J. Non-Cryst. Solids 191, 321–326 (1995).
[Crossref]

Gonzalez-Leal, J.M.

E. Marquez, T. Wagner, J.M. Gonzalez-Leal, A.M. Bernal-Oliva, R. Prieto-Alcon, R. Jimenez-Garay, and P.J.S. Ewen, “Controlling the optical constant of thermally-evaporated Ge10Sb30S60 chalcogenide glass films by photodoping with silver,” J. Non-Cryst. Solids 274, 62–68 (2000).
[Crossref]

Hewak, D. W.

A. K. Mairaj, P. Hua, H. N. Rutt, and D. W. Hewak, “Fabrication and characterization of continuous wave direct UV (λ=244 nm) written channel waveguides in chalcogenide (Ga:La:S) glass,” J. Lightwave Technol. 20,1578–84 (2002).
[Crossref]

Hua, P.

A. K. Mairaj, P. Hua, H. N. Rutt, and D. W. Hewak, “Fabrication and characterization of continuous wave direct UV (λ=244 nm) written channel waveguides in chalcogenide (Ga:La:S) glass,” J. Lightwave Technol. 20,1578–84 (2002).
[Crossref]

Iliev, Tz.

R. Todorov, Tz. Iliev, and K. Petkov, “Light-induced changes in the optical properties of thin films of Ge-S-Bi(Tl,In) chalcogenides,” J. Non-Cryst. Solids 326, 263–267 (2003).
[Crossref]

Jha, A.

D. Marchese, M. De Sario, A. Jha, A. K. Kar, and E. C. Smith, “Highly nonlinear GeS2-based chalcogenide glass for all-optical twin-core-fibre switching,” J. Opt. Soc. Am. 15, 2361 (1998).
[Crossref]

Jimenez-Garay, R.

E. Marquez, T. Wagner, J.M. Gonzalez-Leal, A.M. Bernal-Oliva, R. Prieto-Alcon, R. Jimenez-Garay, and P.J.S. Ewen, “Controlling the optical constant of thermally-evaporated Ge10Sb30S60 chalcogenide glass films by photodoping with silver,” J. Non-Cryst. Solids 274, 62–68 (2000).
[Crossref]

Kar, A. K.

D. Marchese, M. De Sario, A. Jha, A. K. Kar, and E. C. Smith, “Highly nonlinear GeS2-based chalcogenide glass for all-optical twin-core-fibre switching,” J. Opt. Soc. Am. 15, 2361 (1998).
[Crossref]

Kotsalas, I. P.

I. P. Kotsalas and C. Raptis, “High-temperature structural phase transitions of GexS1-x alloy studied by Raman spectroscopy,” Phys. Rev. B 64, 125210 (2001).
[Crossref]

Kovolov, A.

A. Kovolov, “Photo-induced Metastability in Amorphous Semiconductors,” 2003.

Mairaj, A. K.

A. K. Mairaj, P. Hua, H. N. Rutt, and D. W. Hewak, “Fabrication and characterization of continuous wave direct UV (λ=244 nm) written channel waveguides in chalcogenide (Ga:La:S) glass,” J. Lightwave Technol. 20,1578–84 (2002).
[Crossref]

Marchese, D.

D. Marchese, M. De Sario, A. Jha, A. K. Kar, and E. C. Smith, “Highly nonlinear GeS2-based chalcogenide glass for all-optical twin-core-fibre switching,” J. Opt. Soc. Am. 15, 2361 (1998).
[Crossref]

Marquez, E.

E. Marquez, T. Wagner, J.M. Gonzalez-Leal, A.M. Bernal-Oliva, R. Prieto-Alcon, R. Jimenez-Garay, and P.J.S. Ewen, “Controlling the optical constant of thermally-evaporated Ge10Sb30S60 chalcogenide glass films by photodoping with silver,” J. Non-Cryst. Solids 274, 62–68 (2000).
[Crossref]

Melling, P. J.

P. J. Melling, “Alternative Methods of Preparing Chalcogenide Glasses,” Ceramic Bulletin 63, 1427–1429 (1984).

Nagels, P.

E. Sleeckx, P. Nagels, R. Callaerts, and M. Vanroy, “Plasma-enhanced CVD of amorphous GexS1-x and GexSe1-x films,” J. de Physique IV 3, 419–426 (1993).
[Crossref]

Petkov, K.

R. Todorov, Tz. Iliev, and K. Petkov, “Light-induced changes in the optical properties of thin films of Ge-S-Bi(Tl,In) chalcogenides,” J. Non-Cryst. Solids 326, 263–267 (2003).
[Crossref]

Prieto-Alcon, R.

E. Marquez, T. Wagner, J.M. Gonzalez-Leal, A.M. Bernal-Oliva, R. Prieto-Alcon, R. Jimenez-Garay, and P.J.S. Ewen, “Controlling the optical constant of thermally-evaporated Ge10Sb30S60 chalcogenide glass films by photodoping with silver,” J. Non-Cryst. Solids 274, 62–68 (2000).
[Crossref]

Ramachandran, S.

S. Ramachandran and S.G. Bishop, “Excitation of Er3+ emission by host glass absorption in sputtered films of Er-doped Ge10As40Se25S25 glass,” Appl. Phys. Lett. 73, 3196 (1998),
[Crossref]

Raptis, C.

I. P. Kotsalas and C. Raptis, “High-temperature structural phase transitions of GexS1-x alloy studied by Raman spectroscopy,” Phys. Rev. B 64, 125210 (2001).
[Crossref]

Rutt, H. N.

A. K. Mairaj, P. Hua, H. N. Rutt, and D. W. Hewak, “Fabrication and characterization of continuous wave direct UV (λ=244 nm) written channel waveguides in chalcogenide (Ga:La:S) glass,” J. Lightwave Technol. 20,1578–84 (2002).
[Crossref]

Rutt, H.N.

D.S. Gill, R.W. Eason, C. Zaldo, H.N. Rutt, and N.A. Vainos, “Characterisation of Ga-La-S chalcogenide glass thin-film optical waveguides, fabricated by pulsed laser deposition,” J. Non-Cryst. Solids 191, 321–326 (1995).
[Crossref]

Sanghera, J.S.

J.S. Sanghera and I.D. Aggarwal, “Active and passive chalcogenide glass optical fibers for IR applications: a review,” J. Non-Cryst. Solids 256, 6–16 (1999).
[Crossref]

Sleeckx, E.

E. Sleeckx, P. Nagels, R. Callaerts, and M. Vanroy, “Plasma-enhanced CVD of amorphous GexS1-x and GexSe1-x films,” J. de Physique IV 3, 419–426 (1993).
[Crossref]

Smith, E. C.

D. Marchese, M. De Sario, A. Jha, A. K. Kar, and E. C. Smith, “Highly nonlinear GeS2-based chalcogenide glass for all-optical twin-core-fibre switching,” J. Opt. Soc. Am. 15, 2361 (1998).
[Crossref]

Tanaka, Keiji

Keiji Tanaka, “Photoinduced process in Chalcogenide glass,” Current Opinion in Solid State & Materials Science 1, 567 (1996).
[Crossref]

Todorov, R.

R. Todorov, Tz. Iliev, and K. Petkov, “Light-induced changes in the optical properties of thin films of Ge-S-Bi(Tl,In) chalcogenides,” J. Non-Cryst. Solids 326, 263–267 (2003).
[Crossref]

Vainos, N.A.

D.S. Gill, R.W. Eason, C. Zaldo, H.N. Rutt, and N.A. Vainos, “Characterisation of Ga-La-S chalcogenide glass thin-film optical waveguides, fabricated by pulsed laser deposition,” J. Non-Cryst. Solids 191, 321–326 (1995).
[Crossref]

Vanroy, M.

E. Sleeckx, P. Nagels, R. Callaerts, and M. Vanroy, “Plasma-enhanced CVD of amorphous GexS1-x and GexSe1-x films,” J. de Physique IV 3, 419–426 (1993).
[Crossref]

Wagner, T.

E. Marquez, T. Wagner, J.M. Gonzalez-Leal, A.M. Bernal-Oliva, R. Prieto-Alcon, R. Jimenez-Garay, and P.J.S. Ewen, “Controlling the optical constant of thermally-evaporated Ge10Sb30S60 chalcogenide glass films by photodoping with silver,” J. Non-Cryst. Solids 274, 62–68 (2000).
[Crossref]

Xu, J.

J. Xu and R.M. Almeida, “Preparation and Characterization of Germanium Sulphide Based Sol-Gel Planar Waveguides,” J. Sol-Gel Sci. Technol. 19, 243–248 (2000).
[Crossref]

Zaldo, C.

D.S. Gill, R.W. Eason, C. Zaldo, H.N. Rutt, and N.A. Vainos, “Characterisation of Ga-La-S chalcogenide glass thin-film optical waveguides, fabricated by pulsed laser deposition,” J. Non-Cryst. Solids 191, 321–326 (1995).
[Crossref]

Appl. Phys. Lett. (1)

S. Ramachandran and S.G. Bishop, “Excitation of Er3+ emission by host glass absorption in sputtered films of Er-doped Ge10As40Se25S25 glass,” Appl. Phys. Lett. 73, 3196 (1998),
[Crossref]

Ceramic Bulletin (1)

P. J. Melling, “Alternative Methods of Preparing Chalcogenide Glasses,” Ceramic Bulletin 63, 1427–1429 (1984).

Current Opinion in Solid State & Materials Science (1)

Keiji Tanaka, “Photoinduced process in Chalcogenide glass,” Current Opinion in Solid State & Materials Science 1, 567 (1996).
[Crossref]

J. de Physique IV (1)

E. Sleeckx, P. Nagels, R. Callaerts, and M. Vanroy, “Plasma-enhanced CVD of amorphous GexS1-x and GexSe1-x films,” J. de Physique IV 3, 419–426 (1993).
[Crossref]

J. Lightwave Technol. (1)

A. K. Mairaj, P. Hua, H. N. Rutt, and D. W. Hewak, “Fabrication and characterization of continuous wave direct UV (λ=244 nm) written channel waveguides in chalcogenide (Ga:La:S) glass,” J. Lightwave Technol. 20,1578–84 (2002).
[Crossref]

J. Non-Cryst. Solids (4)

E. Marquez, T. Wagner, J.M. Gonzalez-Leal, A.M. Bernal-Oliva, R. Prieto-Alcon, R. Jimenez-Garay, and P.J.S. Ewen, “Controlling the optical constant of thermally-evaporated Ge10Sb30S60 chalcogenide glass films by photodoping with silver,” J. Non-Cryst. Solids 274, 62–68 (2000).
[Crossref]

D.S. Gill, R.W. Eason, C. Zaldo, H.N. Rutt, and N.A. Vainos, “Characterisation of Ga-La-S chalcogenide glass thin-film optical waveguides, fabricated by pulsed laser deposition,” J. Non-Cryst. Solids 191, 321–326 (1995).
[Crossref]

J.S. Sanghera and I.D. Aggarwal, “Active and passive chalcogenide glass optical fibers for IR applications: a review,” J. Non-Cryst. Solids 256, 6–16 (1999).
[Crossref]

R. Todorov, Tz. Iliev, and K. Petkov, “Light-induced changes in the optical properties of thin films of Ge-S-Bi(Tl,In) chalcogenides,” J. Non-Cryst. Solids 326, 263–267 (2003).
[Crossref]

J. Opt. Soc. Am. (1)

D. Marchese, M. De Sario, A. Jha, A. K. Kar, and E. C. Smith, “Highly nonlinear GeS2-based chalcogenide glass for all-optical twin-core-fibre switching,” J. Opt. Soc. Am. 15, 2361 (1998).
[Crossref]

J. Sol-Gel Sci. Technol. (1)

J. Xu and R.M. Almeida, “Preparation and Characterization of Germanium Sulphide Based Sol-Gel Planar Waveguides,” J. Sol-Gel Sci. Technol. 19, 243–248 (2000).
[Crossref]

Phys. Rev. B (1)

I. P. Kotsalas and C. Raptis, “High-temperature structural phase transitions of GexS1-x alloy studied by Raman spectroscopy,” Phys. Rev. B 64, 125210 (2001).
[Crossref]

Other (2)

A. Kovolov, “Photo-induced Metastability in Amorphous Semiconductors,” 2003.

Ihsan Barin, “Thermochemical Data of Pure Substances,” third edition, 1995.

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Fig. 1. Chemical vapour deposition (CVD) system for the germanium sulphide glass waveguide fabrication.

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Fig. 2. SEM picture from side view of the cleaved germanium sulphide glass films on CaF₂ (left) and Schott N-PSK58 glass (right) substrates.

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Fig. 3. Raman spectrum of germanium sulphide glass film by CVD.

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Fig. 4. Optical transmission range of germanium sulphide glass by CVD.

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Fig. 5. XRD pattern of germanium sulphide glass film by CVD.

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Fig. 6. Prism coupling technique for refractive index measurement where n_p is the refractive index of the Rutile prism, n₁ is the refractive index of germanium sulphide glass film, n₂ is the refractive index of the substrate, φ is the incidence angle of He-Ne laser on the first surface, ε is the refracting angle of the Rutile prism, θ_p is the incidence angle of He-Ne laser on the second surface, θ₁ is the refractive angle in the germanium sulphide glass film.

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Fig. 7. SEM picture of germanium sulphide glass channel waveguide by CVD and dry etching process.

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Tables (2)

Table 1. Feasibility of the reaction of H2S and GeCl4 to form GeS2

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Table 2. Effective Index of germanium sulphide glass film by prism coupling technique

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Equations (3)

Equations on this page are rendered with MathJax. Learn more.

{GeCl}_{4} + 2 H_{2} S \leftrightarrow {GeS}_{2} + 4 HCl

Δ G_{r} = \sum Δ G_{f,products} - \sum Δ G_{f,reactants}

Effective index (N) = β ⁄ k_{0} = n_{1} \sin θ_{1} = \sin φ \cos ε + {({n_{p}}^{2} - \sin^{2} φ)}^{\frac{1}{2}} \sin ε

	273K	500K	800K
ΔG_f (kJ/mol) HCL	-95.3	-97.2	-99.4
ΔG_f (kJ/mol) GeS₂	-154.6	-151.2	-141.4
ΔG_f (kJ/mol) H₂S	-33.3	-40.2	-45.7
ΔG_f (kJ/mol)GeCl₄	-461.5	-436.0	-398.5
∑ ΔG_r (kJ/mol)	-7.6	-23.5	-49.3
K	21.1	281.7	1616.0

	ε (degree)	φ (degree)	N(effective index)
1	60	-19.8	2.0491
2	60	-21.7	2.0299
3	60	-24.8	1.9984
4	60	-29.3	1.9526
5	60	-35.2	1.8932

	273K	500K	800K
ΔG_f (kJ/mol) HCL	-95.3	-97.2	-99.4
ΔG_f (kJ/mol) GeS₂	-154.6	-151.2	-141.4
ΔG_f (kJ/mol) H₂S	-33.3	-40.2	-45.7
ΔG_f (kJ/mol)GeCl₄	-461.5	-436.0	-398.5
∑ ΔG_r (kJ/mol)	-7.6	-23.5	-49.3
K	21.1	281.7	1616.0

	ε (degree)	φ (degree)	N(effective index)
1	60	-19.8	2.0491
2	60	-21.7	2.0299
3	60	-24.8	1.9984
4	60	-29.3	1.9526
5	60	-35.2	1.8932

Abstract

References

2003 (1)

2002 (1)

2001 (1)

2000 (2)

1999 (1)

1998 (2)

1996 (1)

1995 (1)

1993 (1)

1984 (1)

Aggarwal, I.D.

Almeida, R.M.

Barin, Ihsan

Bernal-Oliva, A.M.

Bishop, S.G.

Callaerts, R.

De Sario, M.

Eason, R.W.

Ewen, P.J.S.

Gill, D.S.

Gonzalez-Leal, J.M.

Hewak, D. W.

Hua, P.

Iliev, Tz.

Jha, A.

Jimenez-Garay, R.

Kar, A. K.

Kotsalas, I. P.

Kovolov, A.

Mairaj, A. K.

Marchese, D.

Marquez, E.

Melling, P. J.

Nagels, P.

Petkov, K.

Prieto-Alcon, R.

Ramachandran, S.

Raptis, C.

Rutt, H. N.

Rutt, H.N.

Sanghera, J.S.

Sleeckx, E.

Smith, E. C.

Tanaka, Keiji

Todorov, R.

Vainos, N.A.

Vanroy, M.

Wagner, T.

Xu, J.

Zaldo, C.

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