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Slow-light in a vertical-cavity semiconductor optical amplifier

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This paper discusses the effect of slow-light in Vertical-Cavity Semiconductor Optical Amplifiers. A Fabry-Perot model is used to predict the group delay (GD) and GD-bandwidth performance of a VCSOA operated in reflection in the linear regime. It is shown that the GD depends on all cavity parameters while the GDxGD-bandwidth product only depends on the gain. Experimental demonstration with a 1300nm GaInNAs VCSOA is used to validate the model and demonstrate tunable GDs between 25 and 100 ps by varying the VCSOA gain. Experimental distortion of the signals induced by nonlinear effects is also presented.

©2006 Optical Society of America

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Figures (4)

Fig. 1.
Fig. 1. Top: VCSOA GD as a function of the device gain for different cavity parameters with corresponding threshold curves. Bottom: GDxGD-bandwidth product as a function of device gain.
Fig. 2.
Fig. 2. (a) VCSOA GD measurement set-up; (b) Examples of normalized RF signal delay measurements in linear regime at different VCSOA gain.
Fig. 3.
Fig. 3. (a) Group delay as a function of the VCSOA gain in dB; (b) Gain and delay spectra for G=17dB and GD=100 ps.
Fig. 4.
Fig. 4. (a) VCSOA output signal for different Pin. (b) VCSOA output signal for signal-VCSOA resonance detuning of -40, 0 and 40 pm for Pin=-11dBm and a small-signal gain Gsm~13dB.

Equations (4)

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G ( λ ) = R f + C M ( 1 R f ) R b g s k = 0 ( R f R b g s e ) k 2
= ( R f D R b g s ) 2 + 4 D R f R b g s sin 2 φ 2 ( 1 R f R b g s ) 2 + 4 D R f R b g s sin 2 φ 2
ϕ ( λ ) = Arc tan R b g s ( R f D ) sin φ R f · ( 1 + R b D g s 2 ) R f g s ( R f + D ) cos φ
GD ( λ ) = ( λ ) λ 2 2 π c = 2 L C c R b g s 2 ( D 2 R f 2 ) R f R b ( 1 + R b Dg s 2 ) ( D R f ) g s cos φ R f + R b g s 2 ( D 2 + R f 2 + R f R b D 2 g s 2 ) 2 R f R b ( 1 + R b Dg s 2 ) g s ( D + R f ) cos φ + 4 R f R b Dg s 2 cos 2 φ


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