S.W. Roberts, G. Pandraud, B.J. Luff, C. Bowden, P.J. Annetts, R.J. Bozeat, S. Fuller, J. Drake, M. Jackson, and M. Asghari; paper 08000, NFOEC, Denver, CO, 2000.
S.W. Roberts, G. Pandraud, B.J. Luff, C. Bowden, P.J. Annetts, R.J. Bozeat, S. Fuller, J. Drake, M. Jackson, and M. Asghari; paper 08000, NFOEC, Denver, CO, 2000.
A.P.R. Harpin, A.G. Rickman, R.J.R. Morris, and M. Asghari; US Pat. No. 6,108,478 08/22/2000. Patent: Adiabatic Taper. Company: Bookham Technology, UK.
J.H. Parker, D.W. Feldman, and M. Ashkin; “Raman Scattering by Silicon and Germanium,” Phys. Rev. Vol. 155,712–714(1967).
[Crossref]
S.W. Roberts, G. Pandraud, B.J. Luff, C. Bowden, P.J. Annetts, R.J. Bozeat, S. Fuller, J. Drake, M. Jackson, and M. Asghari; paper 08000, NFOEC, Denver, CO, 2000.
S.W. Roberts, G. Pandraud, B.J. Luff, C. Bowden, P.J. Annetts, R.J. Bozeat, S. Fuller, J. Drake, M. Jackson, and M. Asghari; paper 08000, NFOEC, Denver, CO, 2000.
M. Cardona, “Resonance Phenomena,” in Topics in Appl. Phys. V. 50: Light Scattering in Solids II, M. Cardona and G. Guntherodt, ed. (Springer-Verlag, Berlin, 1982).
[Crossref]
J.M. Ralston and R.K. Chang; “Spontaneous-Raman-Scattering Efficiency and Stimulated Scattering in Silicon,” Phys. Rev. B 21858–1862 (1970).
[Crossref]
D. Dimitropoulos, R. Claps, and B. Jalali; “Prospects for Raman amplification in silicon waveguides,” to be presented at the Materials Research Society Fall meeting (MRS), December 6th (2002), Boston, MA. IEE Paper No.54465.
R. Claps, D. Dimitropoulos, and B. Jalali; “Stimulated Raman Scattering in Silicon Waveguides,” Electronics Letters, IEE (accepted for publication, October 2002). Paper No. ELL 34761.
B. Jalali, S. Yegnanarayanan, T. Yoon, T. Yoshimoto, I. Rendina, and F. Coppinger; “Advances in Silicon-on-Insulator optoelectronics,” IEEE J. Sel. Top. Quantum Electron. (Special Issue on Silicon-based Optoelectronics). 4, 938–947.
D. Dimitropoulos, R. Claps, and B. Jalali; “Prospects for Raman amplification in silicon waveguides,” to be presented at the Materials Research Society Fall meeting (MRS), December 6th (2002), Boston, MA. IEE Paper No.54465.
R. Claps, D. Dimitropoulos, and B. Jalali; “Stimulated Raman Scattering in Silicon Waveguides,” Electronics Letters, IEE (accepted for publication, October 2002). Paper No. ELL 34761.
S.W. Roberts, G. Pandraud, B.J. Luff, C. Bowden, P.J. Annetts, R.J. Bozeat, S. Fuller, J. Drake, M. Jackson, and M. Asghari; paper 08000, NFOEC, Denver, CO, 2000.
J.H. Parker, D.W. Feldman, and M. Ashkin; “Raman Scattering by Silicon and Germanium,” Phys. Rev. Vol. 155,712–714(1967).
[Crossref]
S.W. Roberts, G. Pandraud, B.J. Luff, C. Bowden, P.J. Annetts, R.J. Bozeat, S. Fuller, J. Drake, M. Jackson, and M. Asghari; paper 08000, NFOEC, Denver, CO, 2000.
A.P.R. Harpin, A.G. Rickman, R.J.R. Morris, and M. Asghari; US Pat. No. 6,108,478 08/22/2000. Patent: Adiabatic Taper. Company: Bookham Technology, UK.
P.A. Temple and C.E. Hathaway; “Multiphonon Raman Spectrum of Silicon,” Phys. Rev. B 73685–3697 (1973).
[Crossref]
R.H. Stolen and E.P. Ippen; “Raman gain in glass optical waveguides,” Appl. Phys. Lett. 22276–278 (1973).
[Crossref]
S.W. Roberts, G. Pandraud, B.J. Luff, C. Bowden, P.J. Annetts, R.J. Bozeat, S. Fuller, J. Drake, M. Jackson, and M. Asghari; paper 08000, NFOEC, Denver, CO, 2000.
M. Naydenkov and B. Jalali; Proceedings of the SPIE , Photonics West Conference, Vol. 3936, p. 33, San Jose, CA, January 2000.
M. Naydenkov and B. Jalali; Proceedings of the IEEE International SOI Conference, p.56, Rohnert Park, CA, October 1999.
D. Dimitropoulos, R. Claps, and B. Jalali; “Prospects for Raman amplification in silicon waveguides,” to be presented at the Materials Research Society Fall meeting (MRS), December 6th (2002), Boston, MA. IEE Paper No.54465.
B. Jalali, S. Yegnanarayanan, T. Yoon, T. Yoshimoto, I. Rendina, and F. Coppinger; “Advances in Silicon-on-Insulator optoelectronics,” IEEE J. Sel. Top. Quantum Electron. (Special Issue on Silicon-based Optoelectronics). 4, 938–947.
R. Claps, D. Dimitropoulos, and B. Jalali; “Stimulated Raman Scattering in Silicon Waveguides,” Electronics Letters, IEE (accepted for publication, October 2002). Paper No. ELL 34761.
T. Saito, K. Suto, J. Nishizawa, and M. Kawasaki; “Spontaneous Raman scattering in [100], [110] and [11-2] directional GaP waveguides,” J. Appl. Phys. 901831–1835 (2001).
[Crossref]
James B. Kuo and Shih-Chia Lin, Low voltage SOI CMOS VLSI circuits and devices (John Wiley and Sons, Incorporated, 2001).
James B. Kuo and Shih-Chia Lin, Low voltage SOI CMOS VLSI circuits and devices (John Wiley and Sons, Incorporated, 2001).
S.W. Roberts, G. Pandraud, B.J. Luff, C. Bowden, P.J. Annetts, R.J. Bozeat, S. Fuller, J. Drake, M. Jackson, and M. Asghari; paper 08000, NFOEC, Denver, CO, 2000.
A.P.R. Harpin, A.G. Rickman, R.J.R. Morris, and M. Asghari; US Pat. No. 6,108,478 08/22/2000. Patent: Adiabatic Taper. Company: Bookham Technology, UK.
M. Naydenkov and B. Jalali; Proceedings of the IEEE International SOI Conference, p.56, Rohnert Park, CA, October 1999.
M. Naydenkov and B. Jalali; Proceedings of the SPIE , Photonics West Conference, Vol. 3936, p. 33, San Jose, CA, January 2000.
T. Saito, K. Suto, J. Nishizawa, and M. Kawasaki; “Spontaneous Raman scattering in [100], [110] and [11-2] directional GaP waveguides,” J. Appl. Phys. 901831–1835 (2001).
[Crossref]
S.W. Roberts, G. Pandraud, B.J. Luff, C. Bowden, P.J. Annetts, R.J. Bozeat, S. Fuller, J. Drake, M. Jackson, and M. Asghari; paper 08000, NFOEC, Denver, CO, 2000.
J.H. Parker, D.W. Feldman, and M. Ashkin; “Raman Scattering by Silicon and Germanium,” Phys. Rev. Vol. 155,712–714(1967).
[Crossref]
J.M. Ralston and R.K. Chang; “Spontaneous-Raman-Scattering Efficiency and Stimulated Scattering in Silicon,” Phys. Rev. B 21858–1862 (1970).
[Crossref]
B. Jalali, S. Yegnanarayanan, T. Yoon, T. Yoshimoto, I. Rendina, and F. Coppinger; “Advances in Silicon-on-Insulator optoelectronics,” IEEE J. Sel. Top. Quantum Electron. (Special Issue on Silicon-based Optoelectronics). 4, 938–947.
A.P.R. Harpin, A.G. Rickman, R.J.R. Morris, and M. Asghari; US Pat. No. 6,108,478 08/22/2000. Patent: Adiabatic Taper. Company: Bookham Technology, UK.
S.W. Roberts, G. Pandraud, B.J. Luff, C. Bowden, P.J. Annetts, R.J. Bozeat, S. Fuller, J. Drake, M. Jackson, and M. Asghari; paper 08000, NFOEC, Denver, CO, 2000.
T. Saito, K. Suto, J. Nishizawa, and M. Kawasaki; “Spontaneous Raman scattering in [100], [110] and [11-2] directional GaP waveguides,” J. Appl. Phys. 901831–1835 (2001).
[Crossref]
R.G. Smith; “Optical Power Handling Capacity of Low Loss Optical Fibers as Determined by Stimulated Raman and Brillouin Scattering,” Appl. Opt. 682489–2494 (1972).
[Crossref]
R.A. Soref; “Nonlinear refractive Index of IV–IV compound semiconductors,” Appl. Opt. Vol. 31, 4627–4629 (1992).
[Crossref]
R.H. Stolen and E.P. Ippen; “Raman gain in glass optical waveguides,” Appl. Phys. Lett. 22276–278 (1973).
[Crossref]
T. Saito, K. Suto, J. Nishizawa, and M. Kawasaki; “Spontaneous Raman scattering in [100], [110] and [11-2] directional GaP waveguides,” J. Appl. Phys. 901831–1835 (2001).
[Crossref]
P.A. Temple and C.E. Hathaway; “Multiphonon Raman Spectrum of Silicon,” Phys. Rev. B 73685–3697 (1973).
[Crossref]
B. Jalali, S. Yegnanarayanan, T. Yoon, T. Yoshimoto, I. Rendina, and F. Coppinger; “Advances in Silicon-on-Insulator optoelectronics,” IEEE J. Sel. Top. Quantum Electron. (Special Issue on Silicon-based Optoelectronics). 4, 938–947.
B. Jalali, S. Yegnanarayanan, T. Yoon, T. Yoshimoto, I. Rendina, and F. Coppinger; “Advances in Silicon-on-Insulator optoelectronics,” IEEE J. Sel. Top. Quantum Electron. (Special Issue on Silicon-based Optoelectronics). 4, 938–947.
B. Jalali, S. Yegnanarayanan, T. Yoon, T. Yoshimoto, I. Rendina, and F. Coppinger; “Advances in Silicon-on-Insulator optoelectronics,” IEEE J. Sel. Top. Quantum Electron. (Special Issue on Silicon-based Optoelectronics). 4, 938–947.
R.G. Smith; “Optical Power Handling Capacity of Low Loss Optical Fibers as Determined by Stimulated Raman and Brillouin Scattering,” Appl. Opt. 682489–2494 (1972).
[Crossref]
R.A. Soref; “Nonlinear refractive Index of IV–IV compound semiconductors,” Appl. Opt. Vol. 31, 4627–4629 (1992).
[Crossref]
R.H. Stolen and E.P. Ippen; “Raman gain in glass optical waveguides,” Appl. Phys. Lett. 22276–278 (1973).
[Crossref]
B. Jalali, S. Yegnanarayanan, T. Yoon, T. Yoshimoto, I. Rendina, and F. Coppinger; “Advances in Silicon-on-Insulator optoelectronics,” IEEE J. Sel. Top. Quantum Electron. (Special Issue on Silicon-based Optoelectronics). 4, 938–947.
T. Saito, K. Suto, J. Nishizawa, and M. Kawasaki; “Spontaneous Raman scattering in [100], [110] and [11-2] directional GaP waveguides,” J. Appl. Phys. 901831–1835 (2001).
[Crossref]
J.H. Parker, D.W. Feldman, and M. Ashkin; “Raman Scattering by Silicon and Germanium,” Phys. Rev. Vol. 155,712–714(1967).
[Crossref]
J.M. Ralston and R.K. Chang; “Spontaneous-Raman-Scattering Efficiency and Stimulated Scattering in Silicon,” Phys. Rev. B 21858–1862 (1970).
[Crossref]
P.A. Temple and C.E. Hathaway; “Multiphonon Raman Spectrum of Silicon,” Phys. Rev. B 73685–3697 (1973).
[Crossref]
M. Cardona, “Resonance Phenomena,” in Topics in Appl. Phys. V. 50: Light Scattering in Solids II, M. Cardona and G. Guntherodt, ed. (Springer-Verlag, Berlin, 1982).
[Crossref]
D. Dimitropoulos, R. Claps, and B. Jalali; “Prospects for Raman amplification in silicon waveguides,” to be presented at the Materials Research Society Fall meeting (MRS), December 6th (2002), Boston, MA. IEE Paper No.54465.
James B. Kuo and Shih-Chia Lin, Low voltage SOI CMOS VLSI circuits and devices (John Wiley and Sons, Incorporated, 2001).
M. Naydenkov and B. Jalali; Proceedings of the IEEE International SOI Conference, p.56, Rohnert Park, CA, October 1999.
S.W. Roberts, G. Pandraud, B.J. Luff, C. Bowden, P.J. Annetts, R.J. Bozeat, S. Fuller, J. Drake, M. Jackson, and M. Asghari; paper 08000, NFOEC, Denver, CO, 2000.
M. Naydenkov and B. Jalali; Proceedings of the SPIE , Photonics West Conference, Vol. 3936, p. 33, San Jose, CA, January 2000.
R. Claps, D. Dimitropoulos, and B. Jalali; “Stimulated Raman Scattering in Silicon Waveguides,” Electronics Letters, IEE (accepted for publication, October 2002). Paper No. ELL 34761.
Spectra-Physics Telecom: “Model RL5 Raman Fiber Laser Specifications.”
A.P.R. Harpin, A.G. Rickman, R.J.R. Morris, and M. Asghari; US Pat. No. 6,108,478 08/22/2000. Patent: Adiabatic Taper. Company: Bookham Technology, UK.