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Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers

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In this study, the characteristics of the nitride-based blue light-emitting diode (LED) without an electron-blocking layer (EBL) are analyzed numerically. The emission spectra, carrier concentrations in the quantum wells (QWs), energy band diagrams, electrostatic fields, and internal quantum efficiency (IQE) are investigated. The simulation results indicate that the LED without an EBL has a better hole-injection efficiency and smaller electrostatic fields in its active region over the conventional LED with an AlGaN EBL. The simulation results also show that the LED without an EBL has severe efficiency droop. However, when the special designed p-type doped InGaN QW barriers are used, the efficiency droop is markedly improved and the electroluminescence (EL) emission intensity is greatly enhanced which is due to the improvement of the hole uniformity in the active region and small electron leakage.

©2012 Optical Society of America

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Figures (8)

Fig. 1
Fig. 1 Schematic of original LEDs with an EBL and u-GaN barriers (structure A), non-EBL LEDs with u-GaN barriers (structure B), and non-EBL LEDs with p-type doped InGaN barriers (structure C).
Fig. 2
Fig. 2 The electrostatic fields of LEDs with (structure A) and without (structure B) an AlGaN EBL at 200 A/cm2 when u-GaN barriers are used.(there is a small location shift on horizontal axis for better observation .)
Fig. 3
Fig. 3 The energy band diagrams of u-GaN barrier LEDs (a) with (structure A) and (b) without (structure B) an AlGaN EBL at 200 A/cm2
Fig. 4
Fig. 4 (a) Electron and (b) hole concentrations of LEDs with (structure A) and without (structure B) an AlGaN EBL in the active region at 200 A/cm2
Fig. 5
Fig. 5 The energy band diagrams of non-EBL LEDs w ith (a) GaN (structure B) and (b) InGaN (structure C) barriers at 200 A/cm2
Fig. 6
Fig. 6 (a) Hole concentrations of structure B and C, and (b) Electron concentrations of structure A and C at 200 A/cm2 (the x axis ranges are stretched for better observation)
Fig. 7
Fig. 7 The electrostatic field diagrams of non-EBL LEDs with GaN (structure B) and InGaN (structure C) barriers at 200 A/cm2
Fig. 8
Fig. 8 (a) EL spectra at 200 A/cm2 and (b) IQE vs injection current for the LEDs of the three structures.


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