S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006–2008 (1998).
[Crossref]
S. H. Park, D. Ahn, and S. L. Chuang, “Electronic and optical properties of a- and m-plane Wurtzite InGaN–GaN quantum wells,” IEEE J. Quantum Electron. 43(12), 1175–1182 (2007).
[Crossref]
T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, “Quantum-confined stark effect due to Piezoelectric fields in GaInN strained quantum wells,” Jpn. J. Appl. Phys. 36(Part 2, No. 4A), L382–L385 (1997).
[Crossref]
T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, “Quantum-confined stark effect due to Piezoelectric fields in GaInN strained quantum wells,” Jpn. J. Appl. Phys. 36(Part 2, No. 4A), L382–L385 (1997).
[Crossref]
H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron. 54(10), 1119–1124 (2010).
[Crossref]
H. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, “Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes,” IEEE J. Quantum Electron. 45(1), 66–78 (2009).
[Crossref]
H. Zhao, R. A. Arif, and N. Tansu, “Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers,” J. Appl. Phys. 104(4), 043104 (2008).
[Crossref]
R. A. Arif, H. P. Zhao, Y. K. Ee, and N. Tansu, “Spontaneous emission and characteristics of staggered InGaN quantum wells light emitting diodes,” IEEE J. Quantum Electron. 44(6), 573–580 (2008).
[Crossref]
R. A. Arif, Y. K. Ee, and N. Tansu, “Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes,” Appl. Phys. Lett. 91(9), 091110 (2007).
[Crossref]
S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006–2008 (1998).
[Crossref]
N. F. Gardner, G. O. Muller, Y. C. Shen, G. Chen, S. Watanabe, W. Gotz, and M. R. Krames, “Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2,” Appl. Phys. Lett. 91(1), 019903–1 (2007).
S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006–2008 (1998).
[Crossref]
S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett. 96(22), 221105 (2010).
[Crossref]
W. W. Chow, M. H. Crawford, J. Y. Tsao, and M. Kneissl, “Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model,” Appl. Phys. Lett. 97(12), 121105 (2010).
[Crossref]
S. H. Park, D. Ahn, and S. L. Chuang, “Electronic and optical properties of a- and m-plane Wurtzite InGaN–GaN quantum wells,” IEEE J. Quantum Electron. 43(12), 1175–1182 (2007).
[Crossref]
M. C. Schmidt, K.-C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of nonpolar m-plane InGaN/GaN laser diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007).
[Crossref]
R. M. Farrell, D. F. Feezell, M. C. Schmidt, D. A. Haeger, K. M. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes,” Jpn. J. Appl. Phys. 46(32), L761–L763 (2007).
[Crossref]
S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006–2008 (1998).
[Crossref]
W. W. Chow, M. H. Crawford, J. Y. Tsao, and M. Kneissl, “Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model,” Appl. Phys. Lett. 97(12), 121105 (2010).
[Crossref]
M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]
A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, M. R. Krames, T. G. Mihopoulos, and M. R. Krames, “Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 92(5), 053502 (2008).
[Crossref]
R. M. Farrell, D. F. Feezell, M. C. Schmidt, D. A. Haeger, K. M. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes,” Jpn. J. Appl. Phys. 46(32), L761–L763 (2007).
[Crossref]
M. C. Schmidt, K.-C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of nonpolar m-plane InGaN/GaN laser diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007).
[Crossref]
S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006–2008 (1998).
[Crossref]
S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett. 96(22), 221105 (2010).
[Crossref]
H. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, “Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes,” IEEE J. Quantum Electron. 45(1), 66–78 (2009).
[Crossref]
R. A. Arif, H. P. Zhao, Y. K. Ee, and N. Tansu, “Spontaneous emission and characteristics of staggered InGaN quantum wells light emitting diodes,” IEEE J. Quantum Electron. 44(6), 573–580 (2008).
[Crossref]
R. A. Arif, Y. K. Ee, and N. Tansu, “Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes,” Appl. Phys. Lett. 91(9), 091110 (2007).
[Crossref]
A. L. Tsai, G. C. Fan, and Y. S. Lee, “Effects of strain-compensated AlGaN/InGaN superlattice barriers on the optical properties of InGaN light-emitting diodes,” Appl. Phys., A Mater. Sci. Process. 104(1), 319–323 (2011).
[Crossref]
M. C. Schmidt, K.-C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of nonpolar m-plane InGaN/GaN laser diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007).
[Crossref]
R. M. Farrell, D. F. Feezell, M. C. Schmidt, D. A. Haeger, K. M. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes,” Jpn. J. Appl. Phys. 46(32), L761–L763 (2007).
[Crossref]
R. M. Farrell, D. F. Feezell, M. C. Schmidt, D. A. Haeger, K. M. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes,” Jpn. J. Appl. Phys. 46(32), L761–L763 (2007).
[Crossref]
M. C. Schmidt, K.-C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of nonpolar m-plane InGaN/GaN laser diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007).
[Crossref]
S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett. 96(22), 221105 (2010).
[Crossref]
S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006–2008 (1998).
[Crossref]
R. M. Farrell, D. F. Feezell, M. C. Schmidt, D. A. Haeger, K. M. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes,” Jpn. J. Appl. Phys. 46(32), L761–L763 (2007).
[Crossref]
M. C. Schmidt, K.-C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of nonpolar m-plane InGaN/GaN laser diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007).
[Crossref]
A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, M. R. Krames, T. G. Mihopoulos, and M. R. Krames, “Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 92(5), 053502 (2008).
[Crossref]
N. F. Gardner, G. O. Muller, Y. C. Shen, G. Chen, S. Watanabe, W. Gotz, and M. R. Krames, “Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2,” Appl. Phys. Lett. 91(1), 019903–1 (2007).
E. Kuokstis, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells,” Appl. Phys. Lett. 80(6), 977–1000 (2002).
[Crossref]
N. F. Gardner, G. O. Muller, Y. C. Shen, G. Chen, S. Watanabe, W. Gotz, and M. R. Krames, “Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2,” Appl. Phys. Lett. 91(1), 019903–1 (2007).
A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, M. R. Krames, T. G. Mihopoulos, and M. R. Krames, “Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 92(5), 053502 (2008).
[Crossref]
R. M. Farrell, D. F. Feezell, M. C. Schmidt, D. A. Haeger, K. M. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes,” Jpn. J. Appl. Phys. 46(32), L761–L763 (2007).
[Crossref]
S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006–2008 (1998).
[Crossref]
Y.-L. Li, Y.-R. Huang, and Y.-H. Lai, “Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness,” Appl. Phys. Lett. 91(18), 181113 (2007).
[Crossref]
R. M. Farrell, D. F. Feezell, M. C. Schmidt, D. A. Haeger, K. M. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes,” Jpn. J. Appl. Phys. 46(32), L761–L763 (2007).
[Crossref]
A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, M. R. Krames, T. G. Mihopoulos, and M. R. Krames, “Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 92(5), 053502 (2008).
[Crossref]
T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, “Quantum-confined stark effect due to Piezoelectric fields in GaInN strained quantum wells,” Jpn. J. Appl. Phys. 36(Part 2, No. 4A), L382–L385 (1997).
[Crossref]
J. Park and Y. Kawakami, “Photoluminescence property of InGaN single quantum well with embedded AlGaN δ layer,” Appl. Phys. Lett. 88(20), 202107 (2006).
[Crossref]
R. M. Farrell, D. F. Feezell, M. C. Schmidt, D. A. Haeger, K. M. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes,” Jpn. J. Appl. Phys. 46(32), L761–L763 (2007).
[Crossref]
S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006–2008 (1998).
[Crossref]
E. Kuokstis, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells,” Appl. Phys. Lett. 80(6), 977–1000 (2002).
[Crossref]
S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett. 96(22), 221105 (2010).
[Crossref]
S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett. 96(22), 221105 (2010).
[Crossref]
M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]
M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]
M. C. Schmidt, K.-C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of nonpolar m-plane InGaN/GaN laser diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007).
[Crossref]
M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]
M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]
S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett. 96(22), 221105 (2010).
[Crossref]
W. W. Chow, M. H. Crawford, J. Y. Tsao, and M. Kneissl, “Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model,” Appl. Phys. Lett. 97(12), 121105 (2010).
[Crossref]
T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, “Quantum-confined stark effect due to Piezoelectric fields in GaInN strained quantum wells,” Jpn. J. Appl. Phys. 36(Part 2, No. 4A), L382–L385 (1997).
[Crossref]
A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, M. R. Krames, T. G. Mihopoulos, and M. R. Krames, “Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 92(5), 053502 (2008).
[Crossref]
A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, M. R. Krames, T. G. Mihopoulos, and M. R. Krames, “Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 92(5), 053502 (2008).
[Crossref]
N. F. Gardner, G. O. Muller, Y. C. Shen, G. Chen, S. Watanabe, W. Gotz, and M. R. Krames, “Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2,” Appl. Phys. Lett. 91(1), 019903–1 (2007).
C.-T. Liao, M.-C. Tsai, B.-T. Liou, S.-H. Yen, and Y.-K. Kuo, “Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well,” J. Appl. Phys. 108(6), 063107 (2010).
[Crossref]
E. Kuokstis, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells,” Appl. Phys. Lett. 80(6), 977–1000 (2002).
[Crossref]
Y.-L. Li, Y.-R. Huang, and Y.-H. Lai, “Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness,” Appl. Phys. Lett. 91(18), 181113 (2007).
[Crossref]
M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]
A. L. Tsai, G. C. Fan, and Y. S. Lee, “Effects of strain-compensated AlGaN/InGaN superlattice barriers on the optical properties of InGaN light-emitting diodes,” Appl. Phys., A Mater. Sci. Process. 104(1), 319–323 (2011).
[Crossref]
U. Ozgur, H. Liu, X. Li, X. Ni, and H. Morkoç, “GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels,” Proc. IEEE 98(7), 1180–1196 (2010).
[Crossref]
Y.-L. Li, Y.-R. Huang, and Y.-H. Lai, “Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness,” Appl. Phys. Lett. 91(18), 181113 (2007).
[Crossref]
C.-T. Liao, M.-C. Tsai, B.-T. Liou, S.-H. Yen, and Y.-K. Kuo, “Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well,” J. Appl. Phys. 108(6), 063107 (2010).
[Crossref]
C.-T. Liao, M.-C. Tsai, B.-T. Liou, S.-H. Yen, and Y.-K. Kuo, “Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well,” J. Appl. Phys. 108(6), 063107 (2010).
[Crossref]
H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4Suppl 4), A991–A1007 (2011).
[Crossref]
[PubMed]
H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron. 54(10), 1119–1124 (2010).
[Crossref]
H. Zhao, G. Liu, and N. Tansu, “Analysis of InGaN-delta-InN quantum wells for light-emitting diodes,” Appl. Phys. Lett. 97(13), 131114 (2010).
[Crossref]
U. Ozgur, H. Liu, X. Li, X. Ni, and H. Morkoç, “GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels,” Proc. IEEE 98(7), 1180–1196 (2010).
[Crossref]
S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett. 96(22), 221105 (2010).
[Crossref]
V. S. Sizov, V. V. Neploh, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin, A. E. Nikolaev, A. M. Mintairov, and J. L. Merz, “Study of tunneling transport of carriers in structures with an InGaN/GaN active region,” Semiconductors 44(12), 1567–1575 (2010).
[Crossref]
V. S. Sizov, V. V. Neploh, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin, A. E. Nikolaev, A. M. Mintairov, and J. L. Merz, “Study of tunneling transport of carriers in structures with an InGaN/GaN active region,” Semiconductors 44(12), 1567–1575 (2010).
[Crossref]
I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94(6), 3675–3696 (2003).
[Crossref]
A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, M. R. Krames, T. G. Mihopoulos, and M. R. Krames, “Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 92(5), 053502 (2008).
[Crossref]
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M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]