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Tailoring single-cycle electromagnetic pulses in the 2–9 THz frequency range using DAST/SiO2 multilayer structures pumped at Ti:sapphire wavelength

Andrei G. Stepanov, Andrii Rogov, Luigi Bonacina, Jean-Pierre Wolf, and Christoph P. Hauri

Open Access Open Access

Abstract

We present a numerical parametric study of single-cycle electromagnetic pulse generation in a DAST/SiO2 multilayer structure via collinear optical rectification of 800 nm femtosecond laser pulses. It is shown that modifications of the thicknesses of the DAST and SiO2 layers allow tuning of the average frequency of the generated THz pulses in the frequency range from 3 to 6 THz. The laser-to-THz energy conversion efficiency in the proposed structures is compared with that in a bulk DAST crystal and a quasi-phase-matching periodically poled DAST crystal and shows significant enhancement.

© 2014 Optical Society of America

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Figures (4)
Fig. 1
Fig. 1 THz generation via collinear optical rectification of 800 nm femtosecond laser pulses in studied samples: bulk DAST crystal (thickness ~100 μm) (a), multilayer DAST/SiO2 structure (b), quasi-phase-matching periodically poled DAST crystal (c), see Table1. for details.

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Fig. 2
Fig. 2 Temporal profiles of THz pulses calculated for three different DAST/SiO2 multilayer structures (curves i, ii, and iii; see text for details) and for a quasi-phase-matching periodically poled DAST crystal (curve iv).

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Fig. 3
Fig. 3 FFT spectra of THz pulses calculated for three different DAST/SiO2 multilayer structures (i, ii, and iii; see text for details) and for a quasi-phase-matching periodically poled DAST crystal (iv).

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Fig. 4
Fig. 4 Laser-to-THz energy conversion efficiency as a function of laser pulse propagation distance calculated for three different DAST/SiO2 multilayer structures (traces i, ii, and iii), a quasi-phase-matching periodically poled DAST crystal (trace iv), and a bulk DAST crystal (trace v) pumped with the output of a Ti:sapphire laser (0.8 μm).

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Tables (1)

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Table1 Parameters of the investigated multilayer DAST/SiO2 structures (i-iii) and the quasi-phase-matching periodically poled DAST crystal (iv).

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Equations (1)

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∂ ∂z E(z, ω THz )= − α( ω THz ) 2 E(z, ω THz )+ i 2 ω THz d eff n( ω THz )c ∫ ω L2 ω L1 E( ω L + ω THz ) E * ( ω L ) e iΔkz d ω L
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