Abstract

A high-performance integrated silicon TE-pass polarizer is proposed and demonstrated. The polarizer uses a series of adiabatic waveguide bends that yield high extinction ratio for the TM polarization and low insertion loss for the TE polarization, and does not require special materials or complex fabrication steps. The polarizer, implemented on a silicon-on-insulator platform with a 220 nm silicon thickness, is measured to have insertion loss ≤ 0.37 dB (average 0.12 dB) and extinction ratio ≥ 27.6 dB (average 36.0 dB) over a 1.5 μm to 1.6 μm wavelength range, with a footprint of 63 μm × 9.5 μm. The trade-off between the footprint of the polarizer and its performance is established. While the analysis was done for a silicon-on-insulator platform, the concept is applicable to other waveguide geometries and integrated photonic platforms.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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2017 (1)

2016 (1)

2015 (1)

2014 (4)

S. I. H. Azzam, M. F. O. Hameed, N. F. F. Areed, M. Abd-Elrazzak, H. A. El-Mikaty, and S. S. A. Obayya, “Proposal of an ultracompact CMOS-compatible TE-/TM-pass polarizer based on SOI platform,” IEEE Photonics Technol. Lett. 26(16), 1633–1636 (2014).
[Crossref]

X. Guan, P. Chen, S. Chen, P. Xu, Y. Shi, and D. Dai, “Low-Loss ultracompact TM-pass polarizer with a silicon subwavelength grating waveguide,” Opt. Lett. 39(15), 4514–4517 (2014).
[Crossref] [PubMed]

W. D. Sacher, T. Barwicz, B. J. F. Taylor, and J. K. S. Poon, “Polarization rotator-splitters in standard active silicon photonics platforms,” Opt. Express 22(4), 3777–3786 (2014).
[Crossref] [PubMed]

D. Dai and J. E. Bowers, “Silicon-based on-chip multiplexing technologies and devices for peta-bit optical interconnects,” Nanophotonics 3(4–5), 283–311 (2014).
[Crossref]

2013 (3)

D. Dai, L. Liu, S. Gao, D. Xu, and S. He, “Polarization management for silicon photonic integrated circuits,” Laser Photonics Review 7(3), 303–328 (2013).
[Crossref]

J. F. Bauters, M. J. R. Heck, D. Dai, J. S. Barton, D. J. Blumenthal, and J. E. Bowers, “Ultralow-loss planar Si3N4 waveguide polarizers,” IEEE Photonics J. 5(1), 6600207 (2013).
[Crossref]

M. Cherchi, S. Ylinen, M. Harjanne, M. Kapulainen, and T. Aalto, “Dramatic size reduction of waveguide bends on a micron-scale silicon photonic platform,” Opt. Express 21(15), 17814–17823 (2013).
[Crossref] [PubMed]

2012 (3)

2011 (2)

W. Bogaerts and S. K. Selvaraja, “Compact single-mode silicon hybrid rib/strip waveguide with adiabatic bends,” IEEE Photonics J. 3(3), 422–432 (2011).
[Crossref]

M. Alam, J. S. Aitchsion, and M. Mojahedi, “Compact hybrid TM-pass polarizer for silicon-on-insulator platform,” Appl. Opt. 50(15), 2294–2298 (2011).
[Crossref] [PubMed]

2010 (2)

D. Dai, Z. Wang, N. Julian, and J. E. Bowers, “Compact broadband polarizer based on shallowly-etched silicon-on-insulator ridge optical waveguides,” Opt. Express 18(26), 27404–27415 (2010).
[Crossref]

Q. Wang and S. -T. Ho, “Ultracompact TM-pass silicon nanophotonic waveguide polarizer and design,” IEEE Photonics J. 2(1), 49–56 (2010).
[Crossref]

2008 (3)

Y. Cui, Q. Wu, E. Schonbrun, M. Tinker, J. B. Lee, and W. Park, “Silicon-based 2-D slab photonic crystal TM polarizer at telecommunication wavelength,” IEEE Photonics Technol. Lett. 20(8), 641–643 (2008).
[Crossref]

I. Avrutsky, “Integrated optical polarizer for silicon-on-insulator waveguides using evanescent wave coupling to gap plasmon-polaritons,” IEEE J. Sel. Topics Quantum Electron. 14(6), 15509–1514 (2008).
[Crossref]

H. Fukuda, K. Yamada, T. Tsuchizawa, T. Watanabe, H. Shinojima, and S. Itabashi, “Silicon photonic circuit with polarization diversity,” Opt. Express 16(7), 4872–4880 (2008).
[Crossref] [PubMed]

2007 (1)

2006 (1)

R. Soref, “The past, present, and future of silicon photonics,” IEEE J. Sel. Topics Quantum Electron. 12(6), 1678–1687 (2006).
[Crossref]

2005 (1)

M. Kohtoku, T. Kominato, Y. Nasu, and T. Shibata, “New waveguide fabrication techniques for next-generation PLCs,” NTT Technical Review 3(7), 37–41 (2005).

1996 (1)

C. Seo and J. C. Chen, “Low transition losses in bent rib waveguides,” J. Lightwave Technol. 14(10), 2255–2259 (1996).
[Crossref]

1995 (1)

F. Ladouceur and E. Labeye, “A new general approach to optical waveguide path design,” J. Lightwave Tech. 13(3), 481–492 (1995).
[Crossref]

1993 (1)

F. Mustieles, E. Ballesteros, and P. Baquero, “Theoretical S-bend profile for optimization of optical waveguide radiation losses,” IEEE Photonics Technol. Lett. 5(5), 551–553 (1993).
[Crossref]

1992 (1)

D. S. Meek and D. J. Walton, “Clothoid spline transition spirals,” Mathematics Computation 59(199), 117–133 (1992).
[Crossref]

Aalto, T.

Abd-Elrazzak, M.

S. I. H. Azzam, M. F. O. Hameed, N. F. F. Areed, M. Abd-Elrazzak, H. A. El-Mikaty, and S. S. A. Obayya, “Proposal of an ultracompact CMOS-compatible TE-/TM-pass polarizer based on SOI platform,” IEEE Photonics Technol. Lett. 26(16), 1633–1636 (2014).
[Crossref]

Aitchison, J. S.

Aitchsion, J. S.

Alam, M.

Alam, M. Z.

Areed, N. F. F.

S. I. H. Azzam, M. F. O. Hameed, N. F. F. Areed, M. Abd-Elrazzak, H. A. El-Mikaty, and S. S. A. Obayya, “Proposal of an ultracompact CMOS-compatible TE-/TM-pass polarizer based on SOI platform,” IEEE Photonics Technol. Lett. 26(16), 1633–1636 (2014).
[Crossref]

Atchison, J. S.

Avrutsky, I.

I. Avrutsky, “Integrated optical polarizer for silicon-on-insulator waveguides using evanescent wave coupling to gap plasmon-polaritons,” IEEE J. Sel. Topics Quantum Electron. 14(6), 15509–1514 (2008).
[Crossref]

Azzam, S.

Azzam, S. I. H.

S. I. H. Azzam, M. F. O. Hameed, N. F. F. Areed, M. Abd-Elrazzak, H. A. El-Mikaty, and S. S. A. Obayya, “Proposal of an ultracompact CMOS-compatible TE-/TM-pass polarizer based on SOI platform,” IEEE Photonics Technol. Lett. 26(16), 1633–1636 (2014).
[Crossref]

Baets, R.

Ballesteros, E.

F. Mustieles, E. Ballesteros, and P. Baquero, “Theoretical S-bend profile for optimization of optical waveguide radiation losses,” IEEE Photonics Technol. Lett. 5(5), 551–553 (1993).
[Crossref]

Baquero, P.

F. Mustieles, E. Ballesteros, and P. Baquero, “Theoretical S-bend profile for optimization of optical waveguide radiation losses,” IEEE Photonics Technol. Lett. 5(5), 551–553 (1993).
[Crossref]

Barton, J. S.

J. F. Bauters, M. J. R. Heck, D. Dai, J. S. Barton, D. J. Blumenthal, and J. E. Bowers, “Ultralow-loss planar Si3N4 waveguide polarizers,” IEEE Photonics J. 5(1), 6600207 (2013).
[Crossref]

J. F. Bauters, M. J. R. Heck, D. Dai, D. D. John, J. S. Barton, D. J. Blumenthal, and J. E. Bowers, “High extinction, broadband, and low loss planar waveguide polarizers,” in Advanced Photonics Congress (OSA, 2012), paper ITu2B.2.
[Crossref]

Barwicz, T.

Bauters, J. F.

J. F. Bauters, M. J. R. Heck, D. Dai, J. S. Barton, D. J. Blumenthal, and J. E. Bowers, “Ultralow-loss planar Si3N4 waveguide polarizers,” IEEE Photonics J. 5(1), 6600207 (2013).
[Crossref]

J. F. Bauters, M. J. R. Heck, D. Dai, D. D. John, J. S. Barton, D. J. Blumenthal, and J. E. Bowers, “High extinction, broadband, and low loss planar waveguide polarizers,” in Advanced Photonics Congress (OSA, 2012), paper ITu2B.2.
[Crossref]

Blumenthal, D. J.

J. F. Bauters, M. J. R. Heck, D. Dai, J. S. Barton, D. J. Blumenthal, and J. E. Bowers, “Ultralow-loss planar Si3N4 waveguide polarizers,” IEEE Photonics J. 5(1), 6600207 (2013).
[Crossref]

J. F. Bauters, M. J. R. Heck, D. Dai, D. D. John, J. S. Barton, D. J. Blumenthal, and J. E. Bowers, “High extinction, broadband, and low loss planar waveguide polarizers,” in Advanced Photonics Congress (OSA, 2012), paper ITu2B.2.
[Crossref]

Bogaerts, W.

W. Bogaerts and S. K. Selvaraja, “Compact single-mode silicon hybrid rib/strip waveguide with adiabatic bends,” IEEE Photonics J. 3(3), 422–432 (2011).
[Crossref]

W. Bogaerts, D. Taillaert, P. Dumon, D. V. Thourhout, and R. Baets, “A polarization-diversity wavelength duplexer circuit in silicon-on-insulator photonic wires,” Opt. Express 15(4), 1567–1578 (2007).
[Crossref] [PubMed]

Bowers, J. E.

D. Dai and J. E. Bowers, “Silicon-based on-chip multiplexing technologies and devices for peta-bit optical interconnects,” Nanophotonics 3(4–5), 283–311 (2014).
[Crossref]

J. F. Bauters, M. J. R. Heck, D. Dai, J. S. Barton, D. J. Blumenthal, and J. E. Bowers, “Ultralow-loss planar Si3N4 waveguide polarizers,” IEEE Photonics J. 5(1), 6600207 (2013).
[Crossref]

D. Dai, Z. Wang, N. Julian, and J. E. Bowers, “Compact broadband polarizer based on shallowly-etched silicon-on-insulator ridge optical waveguides,” Opt. Express 18(26), 27404–27415 (2010).
[Crossref]

J. F. Bauters, M. J. R. Heck, D. Dai, D. D. John, J. S. Barton, D. J. Blumenthal, and J. E. Bowers, “High extinction, broadband, and low loss planar waveguide polarizers,” in Advanced Photonics Congress (OSA, 2012), paper ITu2B.2.
[Crossref]

Chen, J. C.

C. Seo and J. C. Chen, “Low transition losses in bent rib waveguides,” J. Lightwave Technol. 14(10), 2255–2259 (1996).
[Crossref]

Chen, P.

Chen, S.

Cherchi, M.

Cui, Y.

Y. Cui, Q. Wu, E. Schonbrun, M. Tinker, J. B. Lee, and W. Park, “Silicon-based 2-D slab photonic crystal TM polarizer at telecommunication wavelength,” IEEE Photonics Technol. Lett. 20(8), 641–643 (2008).
[Crossref]

Cunningham, J. E.

Dahlem, M. S.

B. Paredes, H. Zafar, M. S. Dahlem, and A. Khilo, “Silicon photonic TE polarizer using adiabatic waveguide bends,” in OptoElectronics and Communications Conference (OECC) (2016).

H. Zafar, B. Paredes, E. Turdumambetov, M. S. Dahlem, and A. Khilo, “Integrated silicon photonic TE-pass polarizer,” in Photonics North Conference (2016).

Dai, D.

D. Dai and H. Wu, “Realization of a compact polarization splitter-rotator on silicon,” Opt. Lett. 41(10), 2346–2349 (2016).
[Crossref] [PubMed]

D. Dai and J. E. Bowers, “Silicon-based on-chip multiplexing technologies and devices for peta-bit optical interconnects,” Nanophotonics 3(4–5), 283–311 (2014).
[Crossref]

X. Guan, P. Chen, S. Chen, P. Xu, Y. Shi, and D. Dai, “Low-Loss ultracompact TM-pass polarizer with a silicon subwavelength grating waveguide,” Opt. Lett. 39(15), 4514–4517 (2014).
[Crossref] [PubMed]

J. F. Bauters, M. J. R. Heck, D. Dai, J. S. Barton, D. J. Blumenthal, and J. E. Bowers, “Ultralow-loss planar Si3N4 waveguide polarizers,” IEEE Photonics J. 5(1), 6600207 (2013).
[Crossref]

D. Dai, L. Liu, S. Gao, D. Xu, and S. He, “Polarization management for silicon photonic integrated circuits,” Laser Photonics Review 7(3), 303–328 (2013).
[Crossref]

D. Dai, Z. Wang, N. Julian, and J. E. Bowers, “Compact broadband polarizer based on shallowly-etched silicon-on-insulator ridge optical waveguides,” Opt. Express 18(26), 27404–27415 (2010).
[Crossref]

J. F. Bauters, M. J. R. Heck, D. Dai, D. D. John, J. S. Barton, D. J. Blumenthal, and J. E. Bowers, “High extinction, broadband, and low loss planar waveguide polarizers,” in Advanced Photonics Congress (OSA, 2012), paper ITu2B.2.
[Crossref]

Dumon, P.

El-Mikaty, H. A.

S. I. H. Azzam, M. F. O. Hameed, N. F. F. Areed, M. Abd-Elrazzak, H. A. El-Mikaty, and S. S. A. Obayya, “Proposal of an ultracompact CMOS-compatible TE-/TM-pass polarizer based on SOI platform,” IEEE Photonics Technol. Lett. 26(16), 1633–1636 (2014).
[Crossref]

Fujisawa, T.

Fukuda, H.

Gao, S.

D. Dai, L. Liu, S. Gao, D. Xu, and S. He, “Polarization management for silicon photonic integrated circuits,” Laser Photonics Review 7(3), 303–328 (2013).
[Crossref]

Guan, X.

Hameed, M. F. O.

S. I. H. Azzam, M. F. O. Hameed, N. F. F. Areed, M. Abd-Elrazzak, H. A. El-Mikaty, and S. S. A. Obayya, “Proposal of an ultracompact CMOS-compatible TE-/TM-pass polarizer based on SOI platform,” IEEE Photonics Technol. Lett. 26(16), 1633–1636 (2014).
[Crossref]

Harjanne, M.

He, S.

D. Dai, L. Liu, S. Gao, D. Xu, and S. He, “Polarization management for silicon photonic integrated circuits,” Laser Photonics Review 7(3), 303–328 (2013).
[Crossref]

Heck, M. J. R.

J. F. Bauters, M. J. R. Heck, D. Dai, J. S. Barton, D. J. Blumenthal, and J. E. Bowers, “Ultralow-loss planar Si3N4 waveguide polarizers,” IEEE Photonics J. 5(1), 6600207 (2013).
[Crossref]

J. F. Bauters, M. J. R. Heck, D. Dai, D. D. John, J. S. Barton, D. J. Blumenthal, and J. E. Bowers, “High extinction, broadband, and low loss planar waveguide polarizers,” in Advanced Photonics Congress (OSA, 2012), paper ITu2B.2.
[Crossref]

Ho, S. -T.

Q. Wang and S. -T. Ho, “Ultracompact TM-pass silicon nanophotonic waveguide polarizer and design,” IEEE Photonics J. 2(1), 49–56 (2010).
[Crossref]

Itabashi, S.

John, D. D.

J. F. Bauters, M. J. R. Heck, D. Dai, D. D. John, J. S. Barton, D. J. Blumenthal, and J. E. Bowers, “High extinction, broadband, and low loss planar waveguide polarizers,” in Advanced Photonics Congress (OSA, 2012), paper ITu2B.2.
[Crossref]

Julian, N.

Kapulainen, M.

Khilo, A.

H. Zafar, B. Paredes, E. Turdumambetov, M. S. Dahlem, and A. Khilo, “Integrated silicon photonic TE-pass polarizer,” in Photonics North Conference (2016).

B. Paredes, H. Zafar, M. S. Dahlem, and A. Khilo, “Silicon photonic TE polarizer using adiabatic waveguide bends,” in OptoElectronics and Communications Conference (OECC) (2016).

Kohtoku, M.

M. Kohtoku, T. Kominato, Y. Nasu, and T. Shibata, “New waveguide fabrication techniques for next-generation PLCs,” NTT Technical Review 3(7), 37–41 (2005).

Kominato, T.

M. Kohtoku, T. Kominato, Y. Nasu, and T. Shibata, “New waveguide fabrication techniques for next-generation PLCs,” NTT Technical Review 3(7), 37–41 (2005).

Krishnamoorthy, A. V.

Labeye, E.

F. Ladouceur and E. Labeye, “A new general approach to optical waveguide path design,” J. Lightwave Tech. 13(3), 481–492 (1995).
[Crossref]

Ladouceur, F.

F. Ladouceur and E. Labeye, “A new general approach to optical waveguide path design,” J. Lightwave Tech. 13(3), 481–492 (1995).
[Crossref]

Lee, J. B.

Y. Cui, Q. Wu, E. Schonbrun, M. Tinker, J. B. Lee, and W. Park, “Silicon-based 2-D slab photonic crystal TM polarizer at telecommunication wavelength,” IEEE Photonics Technol. Lett. 20(8), 641–643 (2008).
[Crossref]

Lee, J.-H.

Li, G.

Liu, L.

D. Dai, L. Liu, S. Gao, D. Xu, and S. He, “Polarization management for silicon photonic integrated circuits,” Laser Photonics Review 7(3), 303–328 (2013).
[Crossref]

Luo, Y.

Makino, S.

Meek, D. S.

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Appl. Opt. (1)

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Other (6)

J. F. Bauters, M. J. R. Heck, D. Dai, D. D. John, J. S. Barton, D. J. Blumenthal, and J. E. Bowers, “High extinction, broadband, and low loss planar waveguide polarizers,” in Advanced Photonics Congress (OSA, 2012), paper ITu2B.2.
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H. Zafar, M. S. Dahlem, and A. Khilo, “Design A: TE-pass polarizer for a 220 nm-thick Si layer (SOI platform),” figshare (2018), https://figshare.com/s/dc799818987ad2be2471 .

H. Zafar, M. S. Dahlem, and A. Khilo, “Design B: TE-pass polarizer for a 220 nm-thick Si layer (SOI platform),” figshare (2018), https://figshare.com/s/6df12f19f646a3ec9d90 .

H. Zafar, M. S. Dahlem, and A. Khilo, “Design C: TE-pass polarizer for a 220 nm-thick Si layer (SOI platform),” figshare (2018), https://figshare.com/s/94b66443e32a8a8470f8 .

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Figures (10)
Fig. 1
Fig. 1 Bend-induced radiation losses in a 500 nm × 220 nm silicon waveguide with a 1 μm bend radius, for a wavelength of 1550 nm: (a,b) magnitude squared of the electric fields (|E|2) of the fundamental TE and TM modes; (c,d) temporal snapshots of |E|2 (top view) obtained with 3D FDTD simulations for TE- and TM-polarized pulses passing through a 90° bend.

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Fig. 2
Fig. 2 Layouts of integrated TE-pass polarizers considered in this work: (a) polarizer composed of bends with constant radius, with |R| = 2 μm and N = 8; (b,c) polarizers proposed in this work which use adiabatic (clothoid-shaped) bends, where the waveguide curvature changes linearly with the waveguide length. In (b), Rmin = 1 μm, θ = 75°, and N = 7, and in (c), Rmin = 1 μm, θ = 105°, and N = 6.

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Fig. 3
Fig. 3 Performance of single-bend polarizers (N = 1): (a) TE mode loss (dB), (b) TM mode loss (dB), and (c) ratio of these losses [Eq. (1)], for different adiabatic bend polarizers (solid lines) and a constant-radius polarizer (dashed lines). The x-axis shows the minimum bend radius Rmin in the case of the adiabatic bend polarizers (solid lines), and the bend radius R for the constant-radius polarizer (dashed lines). The losses are calculated with the 3D FDTD method, at λ = 1550 nm.

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Fig. 4
Fig. 4 TE transmission (insertion loss) and extinction ratio of adiabatic bend polarizers with (a) Rmin = 1 μm, (b) 1.3 μm, and (c) 1.5 μm, as a function of the wavelength, calculated with the 3D FDTD method. The number of bends N is shown as the curve parameter. The angle θ is 105° for all designs.

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Fig. 5
Fig. 5 TE transmission (insertion loss) and extinction ratio of constant-radius polarizers with (a) |R| = 2 μm and (b) |R| = 3 μm, as a function of the wavelength. The number of bends N is shown as the curve parameter.

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Fig. 6
Fig. 6 Optical images of the fabricated TE-pass polarizers: (a) design A and (b) design C.

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Fig. 7
Fig. 7 Measured and simulated transmission spectra of TE and TM polarized light for Rmin = 1 μm, N = 8 turns, and angles θ of (a) 30°, (b) 45°, (c) 90°, and (d) 105° (design A).

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Fig. 8
Fig. 8 Measured and simulated transmission spectra of TE and TM polarized light for Rmin = 1.5 μm, N = 10 and θ = 105° (design C).

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Fig. 9
Fig. 9 Measured and simulated transmission spectra of the fundamental TE and TM modes for polarizer designs A, B and C, as defined in Sec. 3 and Table 2. No experimental data is available for design B, which was not fabricated.

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Fig. 10
Fig. 10 Coordinates of designs A, B and C, plotted from Design Files 1–3 (from [31–33]).

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Tables (2)

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Table 1. Summary of the performance of all fabricated devices, with minimum, maximum and average values of TE and TM losses given over the 1.5 μm to 1.6 μm wavelength range.

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Table 2 Summary of the design parameters and performance characteristics of polarizer designs A, B and C, as defined in Sec. 3, over the 1.5 μm to 1.6 μm wavelength range. Design B was not fabricated, so no experimental data is available.

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Equations (1)

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Loss   Ratio = TM   loss   ( dB ) TE   loss   ( dB ) ,

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