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Optical study of back-contacted CIGS solar cells

Nasim Rezaei, Olindo Isabella, Paul Procel, Zeger Vroon, and Miro Zeman

Open Access Open Access

Abstract

A novel back-contacted solar cell based on a submicron copper indium gallium (di)selenide (CIGS) absorber is proposed and optically investigated. First, charge carrier collection feasibility is studied by band diagram analysis. Then, two back-contacted configurations are suggested and optimized for maximum current production. The results are compared with a reference front/back-contacted CIGS solar cell with a 750-nm-thick absorber. Current density production of 38.84 mA/cm2 is predicted according to our simulations for a realistic front-side texturing. This shows more than 38% improvement in optical performance compared to the reference cell and only 7.7% deviation from the theoretical Green absorption benchmark.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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Figures (6)
Fig. 1
Fig. 1 Visual rendering of the back-contacted CIGS solar cell with high aspect ratio features at the front. WTCO and HTCO indicate, respectively, width and height of the TCO.

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Fig. 2
Fig. 2 Visual rendering of the back-contacted solar cell with natural CIGS morphology and optimized ARC. WTCO and HTCO indicate, respectively, width and height of the TCO.

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Fig. 3
Fig. 3 a) Simplified layer stack of the e- and h-contacts in the envisioned IBC solar cell. From top to bottom: MgF2, Al2O3, CIGS, GZO (e-contact on left-hand side) and Mo (h-contact on the right-hand side). Band diagrams in equilibrium b) and c) refer to e- and h-contact, respectively. EF, Ev and Ec are Fermi, valance band edge and conduction band edge energies, respectively.

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Fig. 4
Fig. 4 a) Implied photocurrent density in CIGS layer (Jph-CIGS) as a function of width and height of TCO. b) absorptance and 1-R spectra of the IBC solar cell when WTCO = 1000 nm and HTCO = 320 nm.

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Fig. 5
Fig. 5 a) Implied photocurrent density (Jph) as a function of width and height of TCO. b) absorptance and 1-R spectra of the IBC solar cell when WTCO = 1000 nm and HTCO = 320 nm.

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Fig. 6
Fig. 6 a) CIGS absorption for TM (blue line), TE (black line) and average of TM and TE (brown area) polarizations and average 1-R (yellow area) spectra. The graphs correspond to the optimized IBC solar cell with as-grown CIGS grains. b) – d) Electric field magnitude at wavelength b) 1020 nm, c) 1070 nm and d) 1110 nm for TM polarization corresponding to local maxima in CIGS absorption, also indicated with red arrows in a).

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Tables (1)

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Table 1 The model parameters used for band diagram modelling in TCAD software. Density of states of electrons and holes are indicated with eDOS and hDOS, respectively. Subscripts A and D stand for acceptor and donor, respectively.

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Equations (3)

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J ph−i =q ∫ 300 1200 A i (λ)Φ(λ) dλ
A Green = 1− e −4αd 1−(1−1/ n 2 ) e −4αd
ΔGreen= J ph−CIGS − J Green J Green %
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