R. Homier, A. Jaouad, A. Turala, C. E. Valdivia, D. Masson, S. G. Wallace, S. Fafard, R. Arès, and V. Aimez, “Antireflection coating design for triple-junction III-V/Ge high-efficiency solar cells using low absorption PECVD silicon nitride,” IEEE J. Photovoltaics 2(3), 393–397 (2012).
[Crossref]
P. Zermatten, A. Jaouad, S. Blais, A. Gorin, V. Aimez, and P. G. Charette, “Plasma-Enhanced Chemical Vapor Deposition of Si-Rich Silicon Nitride Films Optimized for Waveguide-Based Sensing Applications in the Visible Range,” Jpn. J. Appl. Phys. 51(11R), 110205 (2012).
[Crossref]
A. Gorin, A. Jaouad, E. Grondin, V. Aimez, and P. Charette, “Fabrication of silicon nitride waveguides for visible-light using PECVD: a study of the effect of plasma frequency on optical properties,” Opt. Express 16(18), 13509–13516 (2008).
[Crossref]
[PubMed]
J. F. Lelièvre, J. De la Torre, A. Kaminski, G. Bremond, M. Lemiti, R. El Bouayadi, D. Araujo, T. Epicier, R. Monna, M. Pirot, P. J. Ribeyron, and C. Jaussaud, “Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD,” Thin Solid Films 511–512, 103–107 (2006).
[Crossref]
R. Homier, A. Jaouad, A. Turala, C. E. Valdivia, D. Masson, S. G. Wallace, S. Fafard, R. Arès, and V. Aimez, “Antireflection coating design for triple-junction III-V/Ge high-efficiency solar cells using low absorption PECVD silicon nitride,” IEEE J. Photovoltaics 2(3), 393–397 (2012).
[Crossref]
S. R. Pandi-Perumal, A. S. BaHammam, G. M. Brown, D. W. Spence, V. K. Bharti, C. Kaur, R. Hardeland, and D. P. Cardinali, “Melatonin antioxidative defense: therapeutical implications for aging and neurodegenerative processes,” Neurotox. Res. 23(3), 267–300 (2013).
[Crossref]
[PubMed]
A. El Amrani, A. Bekhtari, A. El Kechai, H. Menari, L. Mahiou, and M. Maoudj, “Efficient passivation of solar cells by silicon nitride,” Vacuum 120, 95–99 (2015).
[Crossref]
K. J. Gaston and J. Bennie, “Demographic effects of artificial nighttime lighting on animal populations,” Environ. Rev. 8(22), 323–330 (2014).
[Crossref]
S. P. Singh, Y. Liu, Y. J. Ngoo, L. M. Kyaw, M. K. Bera, S. B. Dolmanan, S. Tripathy, and E. F. Chor, “Influence of PECVD deposited SiN x passivation layer thickness on In 0.18 Al 0.82 N/GaN/Si HEMT,” J. Phys. D Appl. Phys. 48(36), 365104 (2015).
[Crossref]
M. Bessho and K. Shimizu, “Latest trends in LED lighting,” Electron. Commun. Jpn. 95(1), 1–7 (2012).
[Crossref]
S. R. Pandi-Perumal, A. S. BaHammam, G. M. Brown, D. W. Spence, V. K. Bharti, C. Kaur, R. Hardeland, and D. P. Cardinali, “Melatonin antioxidative defense: therapeutical implications for aging and neurodegenerative processes,” Neurotox. Res. 23(3), 267–300 (2013).
[Crossref]
[PubMed]
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]
D. Gall and K. Bieske, “Definition and measurement of circadian radiometric quantities,” (2004).
P. Zermatten, A. Jaouad, S. Blais, A. Gorin, V. Aimez, and P. G. Charette, “Plasma-Enhanced Chemical Vapor Deposition of Si-Rich Silicon Nitride Films Optimized for Waveguide-Based Sensing Applications in the Visible Range,” Jpn. J. Appl. Phys. 51(11R), 110205 (2012).
[Crossref]
J. F. Lelièvre, J. De la Torre, A. Kaminski, G. Bremond, M. Lemiti, R. El Bouayadi, D. Araujo, T. Epicier, R. Monna, M. Pirot, P. J. Ribeyron, and C. Jaussaud, “Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD,” Thin Solid Films 511–512, 103–107 (2006).
[Crossref]
S. R. Pandi-Perumal, A. S. BaHammam, G. M. Brown, D. W. Spence, V. K. Bharti, C. Kaur, R. Hardeland, and D. P. Cardinali, “Melatonin antioxidative defense: therapeutical implications for aging and neurodegenerative processes,” Neurotox. Res. 23(3), 267–300 (2013).
[Crossref]
[PubMed]
S. R. Pandi-Perumal, A. S. BaHammam, G. M. Brown, D. W. Spence, V. K. Bharti, C. Kaur, R. Hardeland, and D. P. Cardinali, “Melatonin antioxidative defense: therapeutical implications for aging and neurodegenerative processes,” Neurotox. Res. 23(3), 267–300 (2013).
[Crossref]
[PubMed]
P. Zermatten, A. Jaouad, S. Blais, A. Gorin, V. Aimez, and P. G. Charette, “Plasma-Enhanced Chemical Vapor Deposition of Si-Rich Silicon Nitride Films Optimized for Waveguide-Based Sensing Applications in the Visible Range,” Jpn. J. Appl. Phys. 51(11R), 110205 (2012).
[Crossref]
M. Chen, “Chlorophyll modifications and their spectral extension in oxygenic photosynthesis,” Annu. Rev. Biochem. 83(1), 317–340 (2014).
[Crossref]
[PubMed]
S. P. Singh, Y. Liu, Y. J. Ngoo, L. M. Kyaw, M. K. Bera, S. B. Dolmanan, S. Tripathy, and E. F. Chor, “Influence of PECVD deposited SiN x passivation layer thickness on In 0.18 Al 0.82 N/GaN/Si HEMT,” J. Phys. D Appl. Phys. 48(36), 365104 (2015).
[Crossref]
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]
A. De Almeida, B. Santos, B. Paolo, and M. Quicheron, “Solid state lighting review - Potential and challenges in Europe,” Renew. Sustain. Energy Rev. 34, 30–48 (2014).
[Crossref]
J. F. Lelièvre, J. De la Torre, A. Kaminski, G. Bremond, M. Lemiti, R. El Bouayadi, D. Araujo, T. Epicier, R. Monna, M. Pirot, P. J. Ribeyron, and C. Jaussaud, “Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD,” Thin Solid Films 511–512, 103–107 (2006).
[Crossref]
G. Di Bella, F. Mascia, L. Gualano, and L. Di Bella, “Melatonin anticancer effects: review,” Int. J. Mol. Sci. 14(2), 2410–2430 (2013).
[Crossref]
[PubMed]
G. Di Bella, F. Mascia, L. Gualano, and L. Di Bella, “Melatonin anticancer effects: review,” Int. J. Mol. Sci. 14(2), 2410–2430 (2013).
[Crossref]
[PubMed]
S. P. Singh, Y. Liu, Y. J. Ngoo, L. M. Kyaw, M. K. Bera, S. B. Dolmanan, S. Tripathy, and E. F. Chor, “Influence of PECVD deposited SiN x passivation layer thickness on In 0.18 Al 0.82 N/GaN/Si HEMT,” J. Phys. D Appl. Phys. 48(36), 365104 (2015).
[Crossref]
A. El Amrani, A. Bekhtari, A. El Kechai, H. Menari, L. Mahiou, and M. Maoudj, “Efficient passivation of solar cells by silicon nitride,” Vacuum 120, 95–99 (2015).
[Crossref]
J. F. Lelièvre, J. De la Torre, A. Kaminski, G. Bremond, M. Lemiti, R. El Bouayadi, D. Araujo, T. Epicier, R. Monna, M. Pirot, P. J. Ribeyron, and C. Jaussaud, “Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD,” Thin Solid Films 511–512, 103–107 (2006).
[Crossref]
A. El Amrani, A. Bekhtari, A. El Kechai, H. Menari, L. Mahiou, and M. Maoudj, “Efficient passivation of solar cells by silicon nitride,” Vacuum 120, 95–99 (2015).
[Crossref]
J. F. Lelièvre, J. De la Torre, A. Kaminski, G. Bremond, M. Lemiti, R. El Bouayadi, D. Araujo, T. Epicier, R. Monna, M. Pirot, P. J. Ribeyron, and C. Jaussaud, “Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD,” Thin Solid Films 511–512, 103–107 (2006).
[Crossref]
R. Homier, A. Jaouad, A. Turala, C. E. Valdivia, D. Masson, S. G. Wallace, S. Fafard, R. Arès, and V. Aimez, “Antireflection coating design for triple-junction III-V/Ge high-efficiency solar cells using low absorption PECVD silicon nitride,” IEEE J. Photovoltaics 2(3), 393–397 (2012).
[Crossref]
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]
D. Gall and K. Bieske, “Definition and measurement of circadian radiometric quantities,” (2004).
D. Garg, P. B. Henderson, R. E. Hollingsworth, and D. G. Jensen, “An economic analysis of the deposition of electrochromic WO3 via sputtering or plasma enhanced chemical vapor deposition,” Mater. Sci. Eng. B. 119, 224–231 (2005).
K. J. Gaston and J. Bennie, “Demographic effects of artificial nighttime lighting on animal populations,” Environ. Rev. 8(22), 323–330 (2014).
[Crossref]
P. Zermatten, A. Jaouad, S. Blais, A. Gorin, V. Aimez, and P. G. Charette, “Plasma-Enhanced Chemical Vapor Deposition of Si-Rich Silicon Nitride Films Optimized for Waveguide-Based Sensing Applications in the Visible Range,” Jpn. J. Appl. Phys. 51(11R), 110205 (2012).
[Crossref]
A. Gorin, A. Jaouad, E. Grondin, V. Aimez, and P. Charette, “Fabrication of silicon nitride waveguides for visible-light using PECVD: a study of the effect of plasma frequency on optical properties,” Opt. Express 16(18), 13509–13516 (2008).
[Crossref]
[PubMed]
G. Di Bella, F. Mascia, L. Gualano, and L. Di Bella, “Melatonin anticancer effects: review,” Int. J. Mol. Sci. 14(2), 2410–2430 (2013).
[Crossref]
[PubMed]
S. R. Pandi-Perumal, A. S. BaHammam, G. M. Brown, D. W. Spence, V. K. Bharti, C. Kaur, R. Hardeland, and D. P. Cardinali, “Melatonin antioxidative defense: therapeutical implications for aging and neurodegenerative processes,” Neurotox. Res. 23(3), 267–300 (2013).
[Crossref]
[PubMed]
D. Garg, P. B. Henderson, R. E. Hollingsworth, and D. G. Jensen, “An economic analysis of the deposition of electrochromic WO3 via sputtering or plasma enhanced chemical vapor deposition,” Mater. Sci. Eng. B. 119, 224–231 (2005).
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]
D. Garg, P. B. Henderson, R. E. Hollingsworth, and D. G. Jensen, “An economic analysis of the deposition of electrochromic WO3 via sputtering or plasma enhanced chemical vapor deposition,” Mater. Sci. Eng. B. 119, 224–231 (2005).
R. Homier, A. Jaouad, A. Turala, C. E. Valdivia, D. Masson, S. G. Wallace, S. Fafard, R. Arès, and V. Aimez, “Antireflection coating design for triple-junction III-V/Ge high-efficiency solar cells using low absorption PECVD silicon nitride,” IEEE J. Photovoltaics 2(3), 393–397 (2012).
[Crossref]
R. Homier, A. Jaouad, A. Turala, C. E. Valdivia, D. Masson, S. G. Wallace, S. Fafard, R. Arès, and V. Aimez, “Antireflection coating design for triple-junction III-V/Ge high-efficiency solar cells using low absorption PECVD silicon nitride,” IEEE J. Photovoltaics 2(3), 393–397 (2012).
[Crossref]
P. Zermatten, A. Jaouad, S. Blais, A. Gorin, V. Aimez, and P. G. Charette, “Plasma-Enhanced Chemical Vapor Deposition of Si-Rich Silicon Nitride Films Optimized for Waveguide-Based Sensing Applications in the Visible Range,” Jpn. J. Appl. Phys. 51(11R), 110205 (2012).
[Crossref]
A. Gorin, A. Jaouad, E. Grondin, V. Aimez, and P. Charette, “Fabrication of silicon nitride waveguides for visible-light using PECVD: a study of the effect of plasma frequency on optical properties,” Opt. Express 16(18), 13509–13516 (2008).
[Crossref]
[PubMed]
J. F. Lelièvre, J. De la Torre, A. Kaminski, G. Bremond, M. Lemiti, R. El Bouayadi, D. Araujo, T. Epicier, R. Monna, M. Pirot, P. J. Ribeyron, and C. Jaussaud, “Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD,” Thin Solid Films 511–512, 103–107 (2006).
[Crossref]
D. Garg, P. B. Henderson, R. E. Hollingsworth, and D. G. Jensen, “An economic analysis of the deposition of electrochromic WO3 via sputtering or plasma enhanced chemical vapor deposition,” Mater. Sci. Eng. B. 119, 224–231 (2005).
J. F. Lelièvre, J. De la Torre, A. Kaminski, G. Bremond, M. Lemiti, R. El Bouayadi, D. Araujo, T. Epicier, R. Monna, M. Pirot, P. J. Ribeyron, and C. Jaussaud, “Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD,” Thin Solid Films 511–512, 103–107 (2006).
[Crossref]
S. R. Pandi-Perumal, A. S. BaHammam, G. M. Brown, D. W. Spence, V. K. Bharti, C. Kaur, R. Hardeland, and D. P. Cardinali, “Melatonin antioxidative defense: therapeutical implications for aging and neurodegenerative processes,” Neurotox. Res. 23(3), 267–300 (2013).
[Crossref]
[PubMed]
S. P. Singh, Y. Liu, Y. J. Ngoo, L. M. Kyaw, M. K. Bera, S. B. Dolmanan, S. Tripathy, and E. F. Chor, “Influence of PECVD deposited SiN x passivation layer thickness on In 0.18 Al 0.82 N/GaN/Si HEMT,” J. Phys. D Appl. Phys. 48(36), 365104 (2015).
[Crossref]
J. F. Lelièvre, J. De la Torre, A. Kaminski, G. Bremond, M. Lemiti, R. El Bouayadi, D. Araujo, T. Epicier, R. Monna, M. Pirot, P. J. Ribeyron, and C. Jaussaud, “Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD,” Thin Solid Films 511–512, 103–107 (2006).
[Crossref]
J. F. Lelièvre, J. De la Torre, A. Kaminski, G. Bremond, M. Lemiti, R. El Bouayadi, D. Araujo, T. Epicier, R. Monna, M. Pirot, P. J. Ribeyron, and C. Jaussaud, “Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD,” Thin Solid Films 511–512, 103–107 (2006).
[Crossref]
S. P. Singh, Y. Liu, Y. J. Ngoo, L. M. Kyaw, M. K. Bera, S. B. Dolmanan, S. Tripathy, and E. F. Chor, “Influence of PECVD deposited SiN x passivation layer thickness on In 0.18 Al 0.82 N/GaN/Si HEMT,” J. Phys. D Appl. Phys. 48(36), 365104 (2015).
[Crossref]
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]
A. El Amrani, A. Bekhtari, A. El Kechai, H. Menari, L. Mahiou, and M. Maoudj, “Efficient passivation of solar cells by silicon nitride,” Vacuum 120, 95–99 (2015).
[Crossref]
A. El Amrani, A. Bekhtari, A. El Kechai, H. Menari, L. Mahiou, and M. Maoudj, “Efficient passivation of solar cells by silicon nitride,” Vacuum 120, 95–99 (2015).
[Crossref]
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]
G. Di Bella, F. Mascia, L. Gualano, and L. Di Bella, “Melatonin anticancer effects: review,” Int. J. Mol. Sci. 14(2), 2410–2430 (2013).
[Crossref]
[PubMed]
R. Homier, A. Jaouad, A. Turala, C. E. Valdivia, D. Masson, S. G. Wallace, S. Fafard, R. Arès, and V. Aimez, “Antireflection coating design for triple-junction III-V/Ge high-efficiency solar cells using low absorption PECVD silicon nitride,” IEEE J. Photovoltaics 2(3), 393–397 (2012).
[Crossref]
A. El Amrani, A. Bekhtari, A. El Kechai, H. Menari, L. Mahiou, and M. Maoudj, “Efficient passivation of solar cells by silicon nitride,” Vacuum 120, 95–99 (2015).
[Crossref]
J. F. Lelièvre, J. De la Torre, A. Kaminski, G. Bremond, M. Lemiti, R. El Bouayadi, D. Araujo, T. Epicier, R. Monna, M. Pirot, P. J. Ribeyron, and C. Jaussaud, “Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD,” Thin Solid Films 511–512, 103–107 (2006).
[Crossref]
S. P. Singh, Y. Liu, Y. J. Ngoo, L. M. Kyaw, M. K. Bera, S. B. Dolmanan, S. Tripathy, and E. F. Chor, “Influence of PECVD deposited SiN x passivation layer thickness on In 0.18 Al 0.82 N/GaN/Si HEMT,” J. Phys. D Appl. Phys. 48(36), 365104 (2015).
[Crossref]
S. R. Pandi-Perumal, A. S. BaHammam, G. M. Brown, D. W. Spence, V. K. Bharti, C. Kaur, R. Hardeland, and D. P. Cardinali, “Melatonin antioxidative defense: therapeutical implications for aging and neurodegenerative processes,” Neurotox. Res. 23(3), 267–300 (2013).
[Crossref]
[PubMed]
A. De Almeida, B. Santos, B. Paolo, and M. Quicheron, “Solid state lighting review - Potential and challenges in Europe,” Renew. Sustain. Energy Rev. 34, 30–48 (2014).
[Crossref]
S. M. Pawson, “LED lighting increases the ecological impact of light pollution irrespective of colour temperature,” Ecol. Appl. 23, 515–522 (2013).
J. F. Lelièvre, J. De la Torre, A. Kaminski, G. Bremond, M. Lemiti, R. El Bouayadi, D. Araujo, T. Epicier, R. Monna, M. Pirot, P. J. Ribeyron, and C. Jaussaud, “Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD,” Thin Solid Films 511–512, 103–107 (2006).
[Crossref]
A. De Almeida, B. Santos, B. Paolo, and M. Quicheron, “Solid state lighting review - Potential and challenges in Europe,” Renew. Sustain. Energy Rev. 34, 30–48 (2014).
[Crossref]
J. F. Lelièvre, J. De la Torre, A. Kaminski, G. Bremond, M. Lemiti, R. El Bouayadi, D. Araujo, T. Epicier, R. Monna, M. Pirot, P. J. Ribeyron, and C. Jaussaud, “Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD,” Thin Solid Films 511–512, 103–107 (2006).
[Crossref]
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]
A. De Almeida, B. Santos, B. Paolo, and M. Quicheron, “Solid state lighting review - Potential and challenges in Europe,” Renew. Sustain. Energy Rev. 34, 30–48 (2014).
[Crossref]
M. Bessho and K. Shimizu, “Latest trends in LED lighting,” Electron. Commun. Jpn. 95(1), 1–7 (2012).
[Crossref]
S. P. Singh, Y. Liu, Y. J. Ngoo, L. M. Kyaw, M. K. Bera, S. B. Dolmanan, S. Tripathy, and E. F. Chor, “Influence of PECVD deposited SiN x passivation layer thickness on In 0.18 Al 0.82 N/GaN/Si HEMT,” J. Phys. D Appl. Phys. 48(36), 365104 (2015).
[Crossref]
Z. Yin and F. W. Smith, “Tetrahedron model for the optical dielectric function of hydrogenated amorphous silicon nitride alloys,” Phys. Rev. B Condens. Matter 42(6), 3658–3665 (1990).
[Crossref]
[PubMed]
S. R. Pandi-Perumal, A. S. BaHammam, G. M. Brown, D. W. Spence, V. K. Bharti, C. Kaur, R. Hardeland, and D. P. Cardinali, “Melatonin antioxidative defense: therapeutical implications for aging and neurodegenerative processes,” Neurotox. Res. 23(3), 267–300 (2013).
[Crossref]
[PubMed]
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]
S. P. Singh, Y. Liu, Y. J. Ngoo, L. M. Kyaw, M. K. Bera, S. B. Dolmanan, S. Tripathy, and E. F. Chor, “Influence of PECVD deposited SiN x passivation layer thickness on In 0.18 Al 0.82 N/GaN/Si HEMT,” J. Phys. D Appl. Phys. 48(36), 365104 (2015).
[Crossref]
R. Homier, A. Jaouad, A. Turala, C. E. Valdivia, D. Masson, S. G. Wallace, S. Fafard, R. Arès, and V. Aimez, “Antireflection coating design for triple-junction III-V/Ge high-efficiency solar cells using low absorption PECVD silicon nitride,” IEEE J. Photovoltaics 2(3), 393–397 (2012).
[Crossref]
R. Homier, A. Jaouad, A. Turala, C. E. Valdivia, D. Masson, S. G. Wallace, S. Fafard, R. Arès, and V. Aimez, “Antireflection coating design for triple-junction III-V/Ge high-efficiency solar cells using low absorption PECVD silicon nitride,” IEEE J. Photovoltaics 2(3), 393–397 (2012).
[Crossref]
R. Homier, A. Jaouad, A. Turala, C. E. Valdivia, D. Masson, S. G. Wallace, S. Fafard, R. Arès, and V. Aimez, “Antireflection coating design for triple-junction III-V/Ge high-efficiency solar cells using low absorption PECVD silicon nitride,” IEEE J. Photovoltaics 2(3), 393–397 (2012).
[Crossref]
Z. Yin and F. W. Smith, “Tetrahedron model for the optical dielectric function of hydrogenated amorphous silicon nitride alloys,” Phys. Rev. B Condens. Matter 42(6), 3658–3665 (1990).
[Crossref]
[PubMed]
P. Zermatten, A. Jaouad, S. Blais, A. Gorin, V. Aimez, and P. G. Charette, “Plasma-Enhanced Chemical Vapor Deposition of Si-Rich Silicon Nitride Films Optimized for Waveguide-Based Sensing Applications in the Visible Range,” Jpn. J. Appl. Phys. 51(11R), 110205 (2012).
[Crossref]
M. Chen, “Chlorophyll modifications and their spectral extension in oxygenic photosynthesis,” Annu. Rev. Biochem. 83(1), 317–340 (2014).
[Crossref]
[PubMed]
S. M. Pawson, “LED lighting increases the ecological impact of light pollution irrespective of colour temperature,” Ecol. Appl. 23, 515–522 (2013).
M. Bessho and K. Shimizu, “Latest trends in LED lighting,” Electron. Commun. Jpn. 95(1), 1–7 (2012).
[Crossref]
K. J. Gaston and J. Bennie, “Demographic effects of artificial nighttime lighting on animal populations,” Environ. Rev. 8(22), 323–330 (2014).
[Crossref]
R. Homier, A. Jaouad, A. Turala, C. E. Valdivia, D. Masson, S. G. Wallace, S. Fafard, R. Arès, and V. Aimez, “Antireflection coating design for triple-junction III-V/Ge high-efficiency solar cells using low absorption PECVD silicon nitride,” IEEE J. Photovoltaics 2(3), 393–397 (2012).
[Crossref]
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]
G. Di Bella, F. Mascia, L. Gualano, and L. Di Bella, “Melatonin anticancer effects: review,” Int. J. Mol. Sci. 14(2), 2410–2430 (2013).
[Crossref]
[PubMed]
S. P. Singh, Y. Liu, Y. J. Ngoo, L. M. Kyaw, M. K. Bera, S. B. Dolmanan, S. Tripathy, and E. F. Chor, “Influence of PECVD deposited SiN x passivation layer thickness on In 0.18 Al 0.82 N/GaN/Si HEMT,” J. Phys. D Appl. Phys. 48(36), 365104 (2015).
[Crossref]
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