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Continous-wave lasing operation of 1.3-μm wavelength InP-based photonic crystal surface-emitting lasers using MOVPE regrowth

Yuhki Itoh, Naoya Kono, Naoki Fujiwara, Hideki Yagi, Tomokazu Katsuyama, Takamitsu Kitamura, Kosuke Fujii, Mitsuru Ekawa, Hajime Shoji, Takuya Inoue, Menaka De Zoysa, Kenji Ishizaki, and Susumu Noda

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Abstract

We report on electrically driven InP-based photonic-crystal surface-emitting lasers (PCSELs), which possess a deep-air-hole photonic crystal (PC) structure underneath an active region formed by metal-organic vapor-phase-epitaxial (MOVPE) regrowth. Single-mode continuous-wave (CW) lasing operation in 1.3-μm wavelength is successfully achieved at a temperature of 15°C. It is shown that the enhancement of lateral growth during the MOVPE regrowth process of air holes enables the formation of deep air holes with an atomically flat and thin overlayer, whose thickness is less than 100 nm. A threshold current of 120 mA (threshold current density = 0.68 kA/cm2) is obtained in a device with a diameter of 150 μm. A doughnut-like far-field pattern with the narrow beam divergence of less than 1° is observed. Strong optical confinement in the PC structure is revealed from measurements of the photonic band structure, and this strong optical confinement leads to the single-mode CW lasing operation with a low threshold current density.

© 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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Figures (7)
Fig. 1.
Fig. 1. (a) Perspective-view and (b) top-view schematics of the InP-based PCSEL device structure, and (b) top view of PCSEL. Emission was observed from the region of the PC that was not covered by the p-electrode.

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Fig. 2.
Fig. 2. Cross-sectional SEM images of air holes (a) before and (b) after regrowth of the InP spacer on the PC layer and the InP substrate.

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Fig. 3.
Fig. 3. PL spectrum from MQWs grown on the structure shown in Fig. 2(b). The PL spectrum from MQWs grown directly on an InP substrate (without PC) is also shown as a reference. To avoid the influence of PC resonance which was designed to occur at 1.3-μm wavelengths, a 1.5-μm wavelength-MQW layer was employed here. The Inset shows an AFM image and line profile at the surface of the InP cap layer.

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Fig. 4.
Fig. 4. L-I-V characteristics at 15°C under CW conditions. The inset shows the lasing spectrum at an injection current of 200 mA under the same measurement conditions.

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Fig. 5.
Fig. 5. (a) Photonic band structure of the PCSEL near the Γ2 point with an injection current below threshold under pulsed conditions with a pulse width of 1 μs and a duty cycle of 0.1% at RT. (b) In-plane optical coupling direction for 180° (κ1D) and 90° (κ2D) diffractions.

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Fig. 6.
Fig. 6. NFP and FFPs including polarization states for horizontal and vertical directions of the PCSEL at an injection current of 200 mA under RT and pulsed conditions with a pulse width of 100 ns and a duty cycle of 0.01% for the same chip in Fig. 4.

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Fig. 7.
Fig. 7. Calculated FFPs with polarization states by using three-dimensional coupled-wave theory assuming the same device structure as the fabricated PCSEL.

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