Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Room temperature strong coupling effects from single ZnO nanowire microcavity

Open Access Open Access

Abstract

Strong coupling effects in a dielectric microcavity with a single ZnO nanowire embedded in it have been investigated at room temperature. A large Rabi splitting of ~100 meV is obtained from the polariton dispersion and a non-linearity in the polariton emission characteristics is observed at room temperature with a low threshold of 1.63 μJ/cm2, which corresponds to a polariton density an order of magnitude smaller than that for the Mott transition. The momentum distribution of the lower polaritons shows evidence of dynamic condensation and the absence of a relaxation bottleneck. The polariton relaxation dynamics were investigated by time-resolved measurements, which showed a progressive decrease in the polariton relaxation time with increase in polariton density.

©2012 Optical Society of America

The strong coupling regime of light-matter interaction in semiconductor microcavities has been of interest for the relative ease of fabrication of such microcavities and the ability to embed a variety of bulk or quantum confined emitters in them [15]. Strong coupling occurs when the emitter-cavity photon coupling rate is larger than the emitter and photon decay rates. The elementary excitations in strongly coupled exciton-photon systems are polaritons, characterized by an anti-crossing in their dispersion characteristics [4,5]. The energy separation between the lower and upper polariton branches (LPB and UPB) at the anti-crossing is the normal mode cavity splitting, commonly termed the Rabi splitting [6,7]. Since the effective mass of exciton-polaritons is four orders of magnitude smaller than the electron mass, the effective temperature for Bose condensation is relatively large. In addition to studying the underlying physics of exciton-polaritons and Bose-Einstein condensation, strong coupling in microcavities enables the realization of polariton lasers in which coherent polariton states generate coherent light by spontaneous radiative recombination, without the requirement of population inversion as in a conventional photon laser.

To observe strong coupling effects [816] at temperatures close to or equal to room temperature, materials which provide large coupling strength, and hence large exciton oscillator strength and binding energy, are desired. Therefore, attention has shifted from GaAs-based microcavities to GaN-based [13,14,16], and more recently to ZnO-based ones [1722]. ZnO is a wide bandgap semiconductor with an exciton binding energy EB ~60 meV and a Bohr radius aB ~1.4 nm. The critical temperature for Bose condensation, TC is ~560K [23]. In comparison, EB is ~7-9 meV and TC is ~100K for GaAs quantum wells. The characteristics of exciton-polaritons and their strong coupling in bulk [1719], microwire and nanowire [20,21] ZnO-based microcavities at room temperature and polariton lasing in a bulk ZnO microavity at 120K have been reported [22]. However, room temperature polariton lasing with ZnO, in any form, has not yet been realized.

In the present study we have investigated strong coupling effects in a single nanowire-dielectric microcavity at room temperature. The single ZnO nanowire is embedded in a dielectric and surrounded by distributed Bragg reflectors (DBRs) in the top and bottom. Thus the excitons strongly couple to normal cavity modes in this configuration and not to whispering gallery modes [21] or to cavity modes along the length [20], as in the case of a free-standing nanowire, which itself also serves as the resonant cavity. The embedded nanowire modifies the cavity field and reduces the mode volume, thereby increasing the coupling constant. The polariton dispersion characteristics at room temperature have been calculated and measured by angle resolved photoluminescence from which a Rabi splitting of 103 meV is obtained. Non-linear emission characteristics are observed at room temperature with a distinct threshold at a very low optical excitation density of 1.63 μJ/cm2, accompanied by linewidth narrowing. The measured population distribution in momentum space and the polariton relaxation and recombination times confirm the absence of a relaxation bottleneck and the attainment of quantum degeneracy at k|| ~0.

ZnO nanowires (NW) were grown on (111) silicon substrate by the pulsed laser deposition technique [24] The nanowires are typically 1-2μm long and 150-700nm in diameter based on scanning electron microscope (SEM) imaging. An SEM image of the nanowires is shown in Fig. 1(a) . The nanowire density is estimated to be ~1 × 109 cm−2. Figure 1(b) shows a high resolution transmission electron microscope (TEM) image of a single nanowire, which has good crystalline structure and no dislocations and stacking faults are observed. It is worth mentioning that the contrast present in this image is due to the relatively large diameter (D) of the nanowire, ~200-300 nm. A schematic representation of the mesa-shaped single nanowire-dielectric microcavity is shown in Fig. 2(a) . The microcavity was fabricated by depositing the bottom DBR (15 pairs of alternating SiO2 and Si3N4) and 44 nm of the 3λ/2 SiO2 cavity on a Si substrate by plasma enhanced chemical vapor deposition (PECVD). Next, nanowires are dispersed by drop-casting a low density mixture of iso-propyl alcohol and nanowires on the surface. The ZnO nanowire is 200 nm in diameter and hence it extends over 2 antinodes of the 3λ/2 cavity. To isolate a single nanowire, grid masks with alignment marks are prepared for the sample and a single nanowire is located by scanning electron microscopy with respect to the alignment marks. Because of the relatively large NW diameter, the surface was planarized by spinning and baking PMMA. Finally, the rest of the SiO2 cavity and the top DBR are deposited and 10 μm mesas, centered around the single nanowires, are etched down to complete the microcavity. The mesas are atleast 1 mm apart and hence a 100 μm excitation spot only excites a single mesa. Finite difference time domain (FDTD) simulations were performed with the polarization of the excitation source set perpendicular to the c-axis of the nanowire because XA and XB transitions are more dominant over XC as discussed later. For simplicity, theordinary refractive index of ZnO was only taken into account, instead of considering the anisotropy of ZnO. The calculated profile of the dominant cavity mode (shown in Fig. 2(b)) confirms that Ex and Hy field components are the dominant ones. The field along the z-direction is similar to that of a planar microcavity. In addition to the ZnO-dielectric index step, the top and bottom DBRs of the microcavity provide better confinement along the z-direction, so that the light is more strongly confined within the nanowire. The polarization field in the nanowire is small and assumed to be of the same order, ~0.1 MV/cm, as in comparable GaN nanowires. Both of these factors contribute to a large oscillator strength in the ZnO nanowire [14]. The estimated quality factor is ~300, which corresponds to a cavity Q factor of a 10 μm long isolated nanowire without anyDBR. Thus the dielectric microcavity provides a relatively high Q for a very short length of the nanowire. It is worthwhile to mention that polariton lasing at 120K in a planar bulk ZnO based microcavity with similar Q-factor has been reported recently [22].

 figure: Fig. 1

Fig. 1 (a) Scanning electron microscope (SEM) image of ZnO nanowires grown on n-type Si substrate. The wires have an average diameter of ~200-300 nm and a height of ~1.5 - 2.0 μm. The aerial density is ~1x109 cm−2; (b) high resolution transmission electron microscope (HRTEM) image of a ZnO nanowire with the selective area diffraction (SAD) pattern in the inset. The image shows that the nanowire is free of extended defects or stacking faults. The SAD pattern confirms that the nanowires have the wurtzite crystalline structure and grow along the c-axis.

Download Full Size | PPT Slide | PDF

 figure: Fig. 2

Fig. 2 (a) schematic of the nanowire-microcavity device with the SEM image of a single nanowire placed on the partial cavity; (b) The calculated electric field intensity distribution of the fundamental x-polarized resonance mode around the nanowire of length 1 μm and diameter 300 nm, embedded in a dielectric cavity. The figure shows the cross-sectional profile of the electrical field intensity in the x-z plane. The boundary of the nanowire in the x-z plane is indicated. Also shown alongside is the refractive index profile of the structure.

Download Full Size | PPT Slide | PDF

The optical properties of the nanowires were first studied by photoluminescence (PL) measurements on a nanowire sample performed with excitation from a frequency-tripled mode locked Ti:Sapphire laser (pulse width 130 fs; repetition rate 80 MHz) at 267 nm. The wurtzite crystalline structure gives rise to three free exciton transitions, XA, XB and XC, of which the XA and XB excitons are polarized perpendicular to the c-axis whereas the XC exciton is strongly polarized parallel to the c-axis, as confirmed by interband momentum- matrix calculations [25,26]. The PL spectrum at 10K, shown in Fig. 3(a) , is characterized by free (XA, XB) and donor-bound exciton transitions and their LO-phonon replicas. The temperature dependence of the free exciton (FXA) peak can be fitted well with the Manoogian and Wooley equation and is shown in Fig. 3(b). At 300K the FXA peak is observed at ~3.312 eV. The transmission characteristics of the nanowires were also measured at room temperature and are shown in Fig. 3(c).The energy position of the absorption edge measured from the transmission characteristics coincides with that of the PL peak, indicating negligible Stokes shift and a low density of defects in the nanowires.

 figure: Fig. 3

Fig. 3 (a) Low temperature photoluminescence spectrum from nanowire ensemble measured perpendicular to the c-axis of the nanowire showing peaks corresponding to free (XA,XB) and donor bound excitons and their phonon replica; (b)temperature dependence of the exciton resonance and its phonon replica; (c) photoluminescence and transmission characteristics measured from an ensemble of ZnO nanowires.

Download Full Size | PPT Slide | PDF

The anti-crossing behavior of the resonant polariton modes were determined by both temperature dependent and angle resolved PL measurements. Excitation for these measurements is again provided by the frequency tripled Ti:sapphire laser focused to a spot size of 100 μm on the sample. Temperature-dependent PL spectra measured in the normal direction are shown in Fig. 4(a) . The spectra are characterized by a strong lower polariton (LP) peak below the FXA transition energy while the resonant energies in the UPB are not observed at all, similar to previous observations with wide bandgap materials [17,19,27,28]. The emission feature is also not from a Bragg mode which is observed at 3.139 eV in the 300K reflectivity spectrum (not shown here) measured in the normal direction. The LP peak energy is plotted in Fig. 4(b), together with the measured temperature-dependent FXA energies, EX, as described above, and cavity resonance EC. Data obtained from angle resolved PL measurements are shown in the color contour plot of Fig. 4(c). The orientation of the angle is orthogonal to the wire since the excitons are coupled to a 2D-cavity mode in adirection perpendicular to the wire. A clear signature of the LPB is again seen at all angles of the out coupled photons and the LPB energy asymptotically approaches the XA energy at high angles. This proves that the emission is not from a cavity mode. The experimental results have been analyzed with the exciton-photon coupled oscillator model, considering only the coupling of XA exciton and cavity mode, since the XB exciton exhibits a weak oscillator strength in PL spectra. The exciton linewidth used in the Hamiltonian is obtained from independent temperature dependent PL measurements from ZnO nanowires. The polariton dispersions calculated by the coupled oscillator model are shown by solid lines in Fig. 4(b) and by dotted lines in Fig. 4(c). The analysis yields a cavity-to-exciton detuning δ = + 1 ± 2 meV and Ω = 100 ± 3 meV. The large value of Ω is attributed to the excellent crystalline quality of the ZnO nanowires and a concentration of the cavity field within the single nanowire in the microcavity. A Rabi splitting ~100 meV creates a LP trap depth of ~50 meV even with a positive detuning. The squared modulus of the exciton and photon Hopfield coefficients derived from the analysis reveals that the LPB is mostly exciton-like with an exciton fraction of ~0.51 at k|| = 0. These characteristics are very desirable for achieving condensation and quantum degeneracy of polaritons at room temperature in a microcavity with moderate Q, since with increase of exciton fraction the polariton relaxation times are reduced and the radiative lifetimes are enhanced [29]. However, it is realized that a positive detuning is not optimal for achieving a low threshold density of excitation for the observed non-linearity described below [30].

 figure: Fig. 4

Fig. 4 (a) Photoluminescence spectra from the ZnO nanowire-microcavity structure for different values of temperature at zero emission angle. Relative tuning of the exciton resonance X through the cavity mode C is achieved by exploiting different energy shifts of the two modes with temperature; (b) extracted peak energies of polariton emission, shown in a, as a function of temperature. The solid lines are obtained from a solution to the coupled harmonic oscillator model; (c) color contour plot of the angle-resolved dispersion characteristics. The dashed lines representing LP and UP energies are obtained from solving the coupled harmonic oscillator model.

Download Full Size | PPT Slide | PDF

To investigate non-linearity and coherence properties of polariton emission from k|| ~0 states, the microcavity was excited at an angle and the luminescence at zero detection angle was analyzed as a function of pump power. The integrated emission intensity is plotted in Fig. 5(a) as a function of the incident energy density (Eexc) and the corresponding LP density N3D = Eexc/(EpumpD). Here D = 200 nm, Epump = 4.64 eV; it is assumed that 100% of the pump photons is absorbed and all injected hot electrons relax down to the ground state of the lower polariton branch without losses. The estimation gives an upper bound of the LP density14. A distinct non-linearity of the output power is observed at an incident energy density of 1.63 μJ/cm2, where the characteristics change from a sub-linear (with slope 0.7) to a more super-linear increase (with slope of 1.75), which corresponds to a threshold polariton density nth = 1.1 × 1017 cm−3. The latter is an order of magnitude smaller than the Mott density at which the transition from excitons to e-h plasma takes place in ZnO [31]. The onset of non-linearity is accompanied by a significant decrease in the emission linewidth (shown in Fig. 5(b)) from 17 meV to ~3.7 meV at the non-linear threshold, which is well below the cavity photon linewidth of ~11 meV estimated from FDTD simulations. It may be noted that we do not observe multimode emission with very small individual linewidths below and above thresholds. Such multimode emission has been attributed to photonic defects leading to localization [13,22] or simply to the different transverse modes in the nanowire14. It is possible that such modes are present, but are not detected due to lack of resolution and thermal broadening and the measured linewidth of 3.7 meV is an aggregate of several peaks. For larger excitation intensity, the linewidth increases again. This behavior is commonly observed and is believed to be due to decoherence induced by polariton-polariton interactions. The onset of non-linearity in the LP emission is also accompanied by a very small blueshift (<1 meV) in the emission peak energy with increasing excitation intensity. A small blueshift is desirable and confirms that the coherent emission is from the ground state and not from the cavity mode which is at a higher energy by ~50 meV.

 figure: Fig. 5

Fig. 5 (a) Integrated photoluminescence intensity measured normal to the device as a function of excitation. The non-linear threshold is at an incident excitation density Eexc = 1.63 μJ/cm2 which corresponds to a LP density of 1.1x1017 cm−2. Inset: PL spectra measured below, at, and above threshold. The spectra reveal progressive linewidth narrowing along with the non-linear increase in the peak intensity; (b) variation of the emission linewidth and peak energy corresponding to a.

Download Full Size | PPT Slide | PDF

To learn more about polariton relaxation and dynamic condensation in k-space as a function of excitation, we have performed two different measurements. In the first we have determined polariton occupancy as a function of k||. To determine occupancy we convert the time-integrated intensity of the angle-resolved LP emission into the number density of LPs by taking into account the k||-dependent density of states and the LP radiative lifetime weightedby the relative Hopfield coefficients [32]. In Fig. 6(a) , the LP number density per k-state is plotted as a function of the energy difference with Ε(k|| = 0) for different excitation levels. The plots are analyzed by using the Maxwell-Boltzmann (MB) distribution, NMB (k) = N0 exp(-E/kBTLP) or the Bose-Einstein distribution: NBE (k) = 1/[exp(E/kBTLP)(1 + N0−1) – 1], where TLP is the effective polariton temperature, N0 = NLP (k|| = 0), and the LP ground state energy is used as the zero energy reference. Far below threshold (0.36Pth), neither distribution fits the data well; just below threshold (0.82Pth), the data can be fitted with the MB distribution using TLP = 323K; and above threshold, a good fit to the data is obtained with a BE distribution, using TLP = 380 and 415K, for P = 1.3Pth and 1.8Pth, respectively. These values of TLP, significantly larger than 300K, indicate that the polariton condensate at k|| ~0 is not in equilibrium with the lattice, but only in self-equilibrium [33]. Such a dynamic condensation process is sufficient to reach quantum degeneracy, but is not adequate for achieving an equilibrium Bose condensate at k|| ~0 [32,33]. In the second experiment we have performed time-resolved PL (TRPL) measurements with a streak camera to determine the LP relaxation time. The system has an overall temporal resolution of ~5 ps. The transient data for excitation powers below, equal to, and above threshold power are depicted in Fig. 6(b). The rise time, which principally reflects the filling of the exciton reservoir, in all instances is limited by the system resolution. On the other hand, with increase in excitation power the decay times decrease rapidly due to enhanced polariton relaxation from the exciton reservoir to the k|| ~0 states.

 figure: Fig. 6

Fig. 6 (a) Occupancy of LPB as a function of pump power obtained from angle-resolved photoluminescence measured below, at, and above threshold. The solid lines are theoretical fits based on MB or BE distributions (see text); (b) Time resolved photoluminescence measured normal to the sample (from k|| = 0) below, at, and above threshold with a streak camera having an overall resolution of 5 ps.

Download Full Size | PPT Slide | PDF

Acknowledgments

The work is supported by the National Science Foundation (MRSEC program) under Grant 09-68346 and KAUST under Grant N012509-00.

References and links

1. C. Weisbuch, M. Nishioka, A. Ishikawa, and Y. Arakawa, “Observation of the coupled exciton-photon mode splitting in a semiconductor quantum microcavity,” Phys. Rev. Lett. 69(23), 3314–3317 (1992). [CrossRef]   [PubMed]  

2. Y. Chen, A. Tredicucci, and F. Bassani, “Bulk exciton polaritons in GaAs microcavities,” Phys. Rev. B 52(3), 1800–1805 (1995). [CrossRef]  

3. J. P. Reithmaier, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, and A. Forchel, “Strong coupling in a single quantum dot-semiconductor microcavity system,” Nature 432(7014), 197–200 (2004). [CrossRef]   [PubMed]  

4. G. Khitrova, H. M. Gibbs, F. Jahnke, M. Kira, and S. W. Koch, “Nonlinear optics of normal-mode-coupling semiconductor microcavities,” Rev. Mod. Phys. 71(5), 1591–1639 (1999). [CrossRef]  

5. H. Deng, H. Haug, and Y. Yamamoto, “Exciton-polariton Bose-Einstein condensation,” Rev. Mod. Phys. 82(2), 1489–1537 (2010). [CrossRef]  

6. M. G. Raizen, R. J. Thompson, R. J. Brecha, H. J. Kimble, and H. J. Carmichael, “Normal-mode splitting and linewidth averaging for two-state atoms in an optical cavity,” Phys. Rev. Lett. 63(3), 240–243 (1989). [CrossRef]   [PubMed]  

7. Y. Zhu, D. J. Gauthier, S. E. Morin, Q. Wu, H. J. Carmichael, and T. W. Mossberg, “Vacuum Rabi splitting as a feature of linear-dispersion theory: Analysis and experimental observations,” Phys. Rev. Lett. 64(21), 2499–2502 (1990). [CrossRef]   [PubMed]  

8. J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and S. Dang, “Bose-Einstein condensation of exciton polaritons,” Nature 443(7110), 409–414 (2006). [CrossRef]   [PubMed]  

9. R. Balili, V. Hartwell, D. Snoke, L. Pfeiffer, and K. West, “Bose-Einstein condensation of microcavity polaritons in a trap,” Science 316(5827), 1007–1010 (2007). [CrossRef]   [PubMed]  

10. H. Deng, G. Weihs, C. Santori, J. Bloch, and Y. Yamamoto, “Condensation of semiconductor microcavity exciton polaritons,” Science 298(5591), 199–202 (2002). [CrossRef]   [PubMed]  

11. A. Imamog¯lu, R. J. Ram, S. Pau, and Y. Yamamoto, “Nonequilibrium condensates and lasers without inversion: Exciton-polariton lasers,” Phys. Rev. A 53(6), 4250–4253 (1996). [CrossRef]   [PubMed]  

12. H. Deng, G. Weihs, D. Snoke, J. Bloch, and Y. Yamamoto, “Polariton lasing vs. photon lasing in a semiconductor microcavity,” Proc. Natl. Acad. Sci. U.S.A. 100(26), 15318–15323 (2003). [CrossRef]   [PubMed]  

13. S. Christopoulos, G. B. von Högersthal, A. J. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007). [CrossRef]   [PubMed]  

14. A. Das, J. Heo, M. Jankowski, W. Guo, L. Zhang, H. Deng, and P. Bhattacharya, “Room temperature ultralow threshold GaN nanowire polariton laser,” Phys. Rev. Lett. 107(6), 066405 (2011). [CrossRef]   [PubMed]  

15. D. Bajoni, P. Senellart, E. Wertz, I. Sagnes, A. Miard, A. Lemaître, and J. Bloch, “Polariton Laser Using Single Micropillar GaAs-GaAlAs Semiconductor Cavities,” Phys. Rev. Lett. 100(4), 047401 (2008). [CrossRef]   [PubMed]  

16. G. Christmann, R. Butté, E. Feltin, J. Carlin, and N. Grandjean, “Room temperature polariton lasing in a GaN/AlGaNmultiple quantum well microcavity,” Appl. Phys. Lett. 93(5), 051102 (2008). [CrossRef]  

17. R. Schmidt-Grund, B. Rheinländer, C. Czekalla, G. Benndorf, H. Hochmuth, M. Lorenz, and M. Grundmann, “Exciton–polariton formation at room temperature in a planar ZnO resonator structure,” Appl. Phys. B 93(2-3), 331–337 (2008). [CrossRef]  

18. R. Shimada, J. Xie, V. Avrutin, Ü. Özgür, and H. Morkoč, “Cavity polaritons in ZnO-based hybrid microcavities,” Appl. Phys. Lett. 92(1), 011127 (2008). [CrossRef]  

19. J.-R. Chen, T.-C. Lu, Y.-C. Wu, S.-C. Lin, W.-R. Liu, W.-F. Hsieh, C.-C. Kuo, and C.-C. Lee, “Large vacuum Rabi splitting in ZnO-based hybrid microcavities observed at room temperature,” Appl. Phys. Lett. 94(6), 061103 (2009). [CrossRef]  

20. L. K. van Vugt, S. Rühle, P. Ravindran, H. C. Gerritsen, L. Kuipers, and D. Vanmaekelbergh, “Exciton polaritons confined in a ZnO nanowire cavity,” Phys. Rev. Lett. 97(14), 147401 (2006). [CrossRef]   [PubMed]  

21. L. Sun, H. Dong, W. Xie, Z. An, X. Shen, and Z. Chen, “Quasi-whispering gallery modes of exciton-polaritons in a ZnO microrod,” Opt. Express 18(15), 15371–15376 (2010). [CrossRef]   [PubMed]  

22. T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011). [CrossRef]  

23. M. Zamfirescu, A. Kavokin, B. Gil, G. Malpuech, and M. Kaliteevski, “ZnO as a material mostly adapted for the realization of room-temperature polariton lasers,” Phys. Rev. B 65(16), 161205 (2002). [CrossRef]  

24. L. Wang, X. Zhang, S. Zhao, G. Zhou, Y. Zhou, and J. Qi, “Synthesis of well-aligned ZnO nanowires by simple physical vapor deposition on c-oriented ZnO thin films without catalysts or additives,” Appl. Phys. Lett. 86(2), 024108 (2005). [CrossRef]  

25. G. Jacopin, L. Rigutti, A. L. Bugallo, F. H. Julien, C. Baratto, E. Comini, M. Ferroni, and M. Tchernycheva, “High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires,” Nanoscale Res. Lett. 6(1), 501 (2011). [CrossRef]   [PubMed]  

26. D. Vanmaekelbergh and L. K. van Vugt, “ZnO nanowire lasers,” Nanoscale 3(7), 2783–2800 (2011). [CrossRef]   [PubMed]  

27. G. Christmann, R. Butté, E. Feltin, A. Mouti, P. Stadelmann, A. Castiglia, J.-F. Carlin, and N. Grandjean, “Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime,” Phys. Rev. B 77(8), 085310 (2008). [CrossRef]  

28. S. Faure, T. Guillet, P. Lefebvre, T. Bretagnon, and B. Gil, “Comparison of strong coupling regimes in bulk GaAs, GaN, and ZnO semiconductor microcavities,” Phys. Rev. B 78(23), 235323 (2008). [CrossRef]  

29. R. Johne, D. D. Solnyshkov, and G. Malpuech, “Theory of exciton-polariton lasing at room temperature in ZnO microcavities,” Appl. Phys. Lett. 93(21), 211105 (2008). [CrossRef]  

30. J. Levrat, R. Butté, E. Feltin, J.-F. Carlin, N. Grandjean, D. Solnyshkov, and G. Malpuech, “Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory,” Phys. Rev. B 81(12), 125305 (2010). [CrossRef]  

31. C. Klingshirn, J. Fallert, H. Zhou, J. Sartor, C. Thiele, F. Maier-Flaig, D. Schneider, and H. Kalt, “65 years of ZnO research – old and very recent results,” Phys. Status Solidi, B Basic Res. 247(6), 1424–1447 (2010). [CrossRef]  

32. H. Deng, D. Press, S. Götzinger, G. S. Solomon, R. Hey, K. H. Ploog, and Y. Yamamoto, “Quantum degenerate exciton-polaritons in thermal equilibrium,” Phys. Rev. Lett. 97(14), 146402 (2006). [CrossRef]   [PubMed]  

33. J. Kasprzak, D. D. Solnyshkov, R. André, S. Dang, and G. Malpuech, “Formation of an exciton polariton condensate: thermodynamic versus kinetic Regimes,” Phys. Rev. Lett. 101(14), 146404 (2008). [CrossRef]   [PubMed]  

References

  • View by:

  1. C. Weisbuch, M. Nishioka, A. Ishikawa, and Y. Arakawa, “Observation of the coupled exciton-photon mode splitting in a semiconductor quantum microcavity,” Phys. Rev. Lett. 69(23), 3314–3317 (1992).
    [Crossref] [PubMed]
  2. Y. Chen, A. Tredicucci, and F. Bassani, “Bulk exciton polaritons in GaAs microcavities,” Phys. Rev. B 52(3), 1800–1805 (1995).
    [Crossref]
  3. J. P. Reithmaier, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, and A. Forchel, “Strong coupling in a single quantum dot-semiconductor microcavity system,” Nature 432(7014), 197–200 (2004).
    [Crossref] [PubMed]
  4. G. Khitrova, H. M. Gibbs, F. Jahnke, M. Kira, and S. W. Koch, “Nonlinear optics of normal-mode-coupling semiconductor microcavities,” Rev. Mod. Phys. 71(5), 1591–1639 (1999).
    [Crossref]
  5. H. Deng, H. Haug, and Y. Yamamoto, “Exciton-polariton Bose-Einstein condensation,” Rev. Mod. Phys. 82(2), 1489–1537 (2010).
    [Crossref]
  6. M. G. Raizen, R. J. Thompson, R. J. Brecha, H. J. Kimble, and H. J. Carmichael, “Normal-mode splitting and linewidth averaging for two-state atoms in an optical cavity,” Phys. Rev. Lett. 63(3), 240–243 (1989).
    [Crossref] [PubMed]
  7. Y. Zhu, D. J. Gauthier, S. E. Morin, Q. Wu, H. J. Carmichael, and T. W. Mossberg, “Vacuum Rabi splitting as a feature of linear-dispersion theory: Analysis and experimental observations,” Phys. Rev. Lett. 64(21), 2499–2502 (1990).
    [Crossref] [PubMed]
  8. J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and S. Dang, “Bose-Einstein condensation of exciton polaritons,” Nature 443(7110), 409–414 (2006).
    [Crossref] [PubMed]
  9. R. Balili, V. Hartwell, D. Snoke, L. Pfeiffer, and K. West, “Bose-Einstein condensation of microcavity polaritons in a trap,” Science 316(5827), 1007–1010 (2007).
    [Crossref] [PubMed]
  10. H. Deng, G. Weihs, C. Santori, J. Bloch, and Y. Yamamoto, “Condensation of semiconductor microcavity exciton polaritons,” Science 298(5591), 199–202 (2002).
    [Crossref] [PubMed]
  11. A. Imamog¯lu, R. J. Ram, S. Pau, and Y. Yamamoto, “Nonequilibrium condensates and lasers without inversion: Exciton-polariton lasers,” Phys. Rev. A 53(6), 4250–4253 (1996).
    [Crossref] [PubMed]
  12. H. Deng, G. Weihs, D. Snoke, J. Bloch, and Y. Yamamoto, “Polariton lasing vs. photon lasing in a semiconductor microcavity,” Proc. Natl. Acad. Sci. U.S.A. 100(26), 15318–15323 (2003).
    [Crossref] [PubMed]
  13. S. Christopoulos, G. B. von Högersthal, A. J. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
    [Crossref] [PubMed]
  14. A. Das, J. Heo, M. Jankowski, W. Guo, L. Zhang, H. Deng, and P. Bhattacharya, “Room temperature ultralow threshold GaN nanowire polariton laser,” Phys. Rev. Lett. 107(6), 066405 (2011).
    [Crossref] [PubMed]
  15. D. Bajoni, P. Senellart, E. Wertz, I. Sagnes, A. Miard, A. Lemaître, and J. Bloch, “Polariton Laser Using Single Micropillar GaAs-GaAlAs Semiconductor Cavities,” Phys. Rev. Lett. 100(4), 047401 (2008).
    [Crossref] [PubMed]
  16. G. Christmann, R. Butté, E. Feltin, J. Carlin, and N. Grandjean, “Room temperature polariton lasing in a GaN/AlGaNmultiple quantum well microcavity,” Appl. Phys. Lett. 93(5), 051102 (2008).
    [Crossref]
  17. R. Schmidt-Grund, B. Rheinländer, C. Czekalla, G. Benndorf, H. Hochmuth, M. Lorenz, and M. Grundmann, “Exciton–polariton formation at room temperature in a planar ZnO resonator structure,” Appl. Phys. B 93(2-3), 331–337 (2008).
    [Crossref]
  18. R. Shimada, J. Xie, V. Avrutin, Ü. Özgür, and H. Morkoč, “Cavity polaritons in ZnO-based hybrid microcavities,” Appl. Phys. Lett. 92(1), 011127 (2008).
    [Crossref]
  19. J.-R. Chen, T.-C. Lu, Y.-C. Wu, S.-C. Lin, W.-R. Liu, W.-F. Hsieh, C.-C. Kuo, and C.-C. Lee, “Large vacuum Rabi splitting in ZnO-based hybrid microcavities observed at room temperature,” Appl. Phys. Lett. 94(6), 061103 (2009).
    [Crossref]
  20. L. K. van Vugt, S. Rühle, P. Ravindran, H. C. Gerritsen, L. Kuipers, and D. Vanmaekelbergh, “Exciton polaritons confined in a ZnO nanowire cavity,” Phys. Rev. Lett. 97(14), 147401 (2006).
    [Crossref] [PubMed]
  21. L. Sun, H. Dong, W. Xie, Z. An, X. Shen, and Z. Chen, “Quasi-whispering gallery modes of exciton-polaritons in a ZnO microrod,” Opt. Express 18(15), 15371–15376 (2010).
    [Crossref] [PubMed]
  22. T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011).
    [Crossref]
  23. M. Zamfirescu, A. Kavokin, B. Gil, G. Malpuech, and M. Kaliteevski, “ZnO as a material mostly adapted for the realization of room-temperature polariton lasers,” Phys. Rev. B 65(16), 161205 (2002).
    [Crossref]
  24. L. Wang, X. Zhang, S. Zhao, G. Zhou, Y. Zhou, and J. Qi, “Synthesis of well-aligned ZnO nanowires by simple physical vapor deposition on c-oriented ZnO thin films without catalysts or additives,” Appl. Phys. Lett. 86(2), 024108 (2005).
    [Crossref]
  25. G. Jacopin, L. Rigutti, A. L. Bugallo, F. H. Julien, C. Baratto, E. Comini, M. Ferroni, and M. Tchernycheva, “High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires,” Nanoscale Res. Lett. 6(1), 501 (2011).
    [Crossref] [PubMed]
  26. D. Vanmaekelbergh and L. K. van Vugt, “ZnO nanowire lasers,” Nanoscale 3(7), 2783–2800 (2011).
    [Crossref] [PubMed]
  27. G. Christmann, R. Butté, E. Feltin, A. Mouti, P. Stadelmann, A. Castiglia, J.-F. Carlin, and N. Grandjean, “Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime,” Phys. Rev. B 77(8), 085310 (2008).
    [Crossref]
  28. S. Faure, T. Guillet, P. Lefebvre, T. Bretagnon, and B. Gil, “Comparison of strong coupling regimes in bulk GaAs, GaN, and ZnO semiconductor microcavities,” Phys. Rev. B 78(23), 235323 (2008).
    [Crossref]
  29. R. Johne, D. D. Solnyshkov, and G. Malpuech, “Theory of exciton-polariton lasing at room temperature in ZnO microcavities,” Appl. Phys. Lett. 93(21), 211105 (2008).
    [Crossref]
  30. J. Levrat, R. Butté, E. Feltin, J.-F. Carlin, N. Grandjean, D. Solnyshkov, and G. Malpuech, “Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory,” Phys. Rev. B 81(12), 125305 (2010).
    [Crossref]
  31. C. Klingshirn, J. Fallert, H. Zhou, J. Sartor, C. Thiele, F. Maier-Flaig, D. Schneider, and H. Kalt, “65 years of ZnO research – old and very recent results,” Phys. Status Solidi, B Basic Res. 247(6), 1424–1447 (2010).
    [Crossref]
  32. H. Deng, D. Press, S. Götzinger, G. S. Solomon, R. Hey, K. H. Ploog, and Y. Yamamoto, “Quantum degenerate exciton-polaritons in thermal equilibrium,” Phys. Rev. Lett. 97(14), 146402 (2006).
    [Crossref] [PubMed]
  33. J. Kasprzak, D. D. Solnyshkov, R. André, S. Dang, and G. Malpuech, “Formation of an exciton polariton condensate: thermodynamic versus kinetic Regimes,” Phys. Rev. Lett. 101(14), 146404 (2008).
    [Crossref] [PubMed]

2011 (4)

A. Das, J. Heo, M. Jankowski, W. Guo, L. Zhang, H. Deng, and P. Bhattacharya, “Room temperature ultralow threshold GaN nanowire polariton laser,” Phys. Rev. Lett. 107(6), 066405 (2011).
[Crossref] [PubMed]

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011).
[Crossref]

G. Jacopin, L. Rigutti, A. L. Bugallo, F. H. Julien, C. Baratto, E. Comini, M. Ferroni, and M. Tchernycheva, “High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires,” Nanoscale Res. Lett. 6(1), 501 (2011).
[Crossref] [PubMed]

D. Vanmaekelbergh and L. K. van Vugt, “ZnO nanowire lasers,” Nanoscale 3(7), 2783–2800 (2011).
[Crossref] [PubMed]

2010 (4)

L. Sun, H. Dong, W. Xie, Z. An, X. Shen, and Z. Chen, “Quasi-whispering gallery modes of exciton-polaritons in a ZnO microrod,” Opt. Express 18(15), 15371–15376 (2010).
[Crossref] [PubMed]

J. Levrat, R. Butté, E. Feltin, J.-F. Carlin, N. Grandjean, D. Solnyshkov, and G. Malpuech, “Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory,” Phys. Rev. B 81(12), 125305 (2010).
[Crossref]

C. Klingshirn, J. Fallert, H. Zhou, J. Sartor, C. Thiele, F. Maier-Flaig, D. Schneider, and H. Kalt, “65 years of ZnO research – old and very recent results,” Phys. Status Solidi, B Basic Res. 247(6), 1424–1447 (2010).
[Crossref]

H. Deng, H. Haug, and Y. Yamamoto, “Exciton-polariton Bose-Einstein condensation,” Rev. Mod. Phys. 82(2), 1489–1537 (2010).
[Crossref]

2009 (1)

J.-R. Chen, T.-C. Lu, Y.-C. Wu, S.-C. Lin, W.-R. Liu, W.-F. Hsieh, C.-C. Kuo, and C.-C. Lee, “Large vacuum Rabi splitting in ZnO-based hybrid microcavities observed at room temperature,” Appl. Phys. Lett. 94(6), 061103 (2009).
[Crossref]

2008 (8)

G. Christmann, R. Butté, E. Feltin, A. Mouti, P. Stadelmann, A. Castiglia, J.-F. Carlin, and N. Grandjean, “Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime,” Phys. Rev. B 77(8), 085310 (2008).
[Crossref]

S. Faure, T. Guillet, P. Lefebvre, T. Bretagnon, and B. Gil, “Comparison of strong coupling regimes in bulk GaAs, GaN, and ZnO semiconductor microcavities,” Phys. Rev. B 78(23), 235323 (2008).
[Crossref]

R. Johne, D. D. Solnyshkov, and G. Malpuech, “Theory of exciton-polariton lasing at room temperature in ZnO microcavities,” Appl. Phys. Lett. 93(21), 211105 (2008).
[Crossref]

J. Kasprzak, D. D. Solnyshkov, R. André, S. Dang, and G. Malpuech, “Formation of an exciton polariton condensate: thermodynamic versus kinetic Regimes,” Phys. Rev. Lett. 101(14), 146404 (2008).
[Crossref] [PubMed]

D. Bajoni, P. Senellart, E. Wertz, I. Sagnes, A. Miard, A. Lemaître, and J. Bloch, “Polariton Laser Using Single Micropillar GaAs-GaAlAs Semiconductor Cavities,” Phys. Rev. Lett. 100(4), 047401 (2008).
[Crossref] [PubMed]

G. Christmann, R. Butté, E. Feltin, J. Carlin, and N. Grandjean, “Room temperature polariton lasing in a GaN/AlGaNmultiple quantum well microcavity,” Appl. Phys. Lett. 93(5), 051102 (2008).
[Crossref]

R. Schmidt-Grund, B. Rheinländer, C. Czekalla, G. Benndorf, H. Hochmuth, M. Lorenz, and M. Grundmann, “Exciton–polariton formation at room temperature in a planar ZnO resonator structure,” Appl. Phys. B 93(2-3), 331–337 (2008).
[Crossref]

R. Shimada, J. Xie, V. Avrutin, Ü. Özgür, and H. Morkoč, “Cavity polaritons in ZnO-based hybrid microcavities,” Appl. Phys. Lett. 92(1), 011127 (2008).
[Crossref]

2007 (2)

R. Balili, V. Hartwell, D. Snoke, L. Pfeiffer, and K. West, “Bose-Einstein condensation of microcavity polaritons in a trap,” Science 316(5827), 1007–1010 (2007).
[Crossref] [PubMed]

S. Christopoulos, G. B. von Högersthal, A. J. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

2006 (3)

J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and S. Dang, “Bose-Einstein condensation of exciton polaritons,” Nature 443(7110), 409–414 (2006).
[Crossref] [PubMed]

H. Deng, D. Press, S. Götzinger, G. S. Solomon, R. Hey, K. H. Ploog, and Y. Yamamoto, “Quantum degenerate exciton-polaritons in thermal equilibrium,” Phys. Rev. Lett. 97(14), 146402 (2006).
[Crossref] [PubMed]

L. K. van Vugt, S. Rühle, P. Ravindran, H. C. Gerritsen, L. Kuipers, and D. Vanmaekelbergh, “Exciton polaritons confined in a ZnO nanowire cavity,” Phys. Rev. Lett. 97(14), 147401 (2006).
[Crossref] [PubMed]

2005 (1)

L. Wang, X. Zhang, S. Zhao, G. Zhou, Y. Zhou, and J. Qi, “Synthesis of well-aligned ZnO nanowires by simple physical vapor deposition on c-oriented ZnO thin films without catalysts or additives,” Appl. Phys. Lett. 86(2), 024108 (2005).
[Crossref]

2004 (1)

J. P. Reithmaier, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, and A. Forchel, “Strong coupling in a single quantum dot-semiconductor microcavity system,” Nature 432(7014), 197–200 (2004).
[Crossref] [PubMed]

2003 (1)

H. Deng, G. Weihs, D. Snoke, J. Bloch, and Y. Yamamoto, “Polariton lasing vs. photon lasing in a semiconductor microcavity,” Proc. Natl. Acad. Sci. U.S.A. 100(26), 15318–15323 (2003).
[Crossref] [PubMed]

2002 (2)

H. Deng, G. Weihs, C. Santori, J. Bloch, and Y. Yamamoto, “Condensation of semiconductor microcavity exciton polaritons,” Science 298(5591), 199–202 (2002).
[Crossref] [PubMed]

M. Zamfirescu, A. Kavokin, B. Gil, G. Malpuech, and M. Kaliteevski, “ZnO as a material mostly adapted for the realization of room-temperature polariton lasers,” Phys. Rev. B 65(16), 161205 (2002).
[Crossref]

1999 (1)

G. Khitrova, H. M. Gibbs, F. Jahnke, M. Kira, and S. W. Koch, “Nonlinear optics of normal-mode-coupling semiconductor microcavities,” Rev. Mod. Phys. 71(5), 1591–1639 (1999).
[Crossref]

1996 (1)

A. Imamog¯lu, R. J. Ram, S. Pau, and Y. Yamamoto, “Nonequilibrium condensates and lasers without inversion: Exciton-polariton lasers,” Phys. Rev. A 53(6), 4250–4253 (1996).
[Crossref] [PubMed]

1995 (1)

Y. Chen, A. Tredicucci, and F. Bassani, “Bulk exciton polaritons in GaAs microcavities,” Phys. Rev. B 52(3), 1800–1805 (1995).
[Crossref]

1992 (1)

C. Weisbuch, M. Nishioka, A. Ishikawa, and Y. Arakawa, “Observation of the coupled exciton-photon mode splitting in a semiconductor quantum microcavity,” Phys. Rev. Lett. 69(23), 3314–3317 (1992).
[Crossref] [PubMed]

1990 (1)

Y. Zhu, D. J. Gauthier, S. E. Morin, Q. Wu, H. J. Carmichael, and T. W. Mossberg, “Vacuum Rabi splitting as a feature of linear-dispersion theory: Analysis and experimental observations,” Phys. Rev. Lett. 64(21), 2499–2502 (1990).
[Crossref] [PubMed]

1989 (1)

M. G. Raizen, R. J. Thompson, R. J. Brecha, H. J. Kimble, and H. J. Carmichael, “Normal-mode splitting and linewidth averaging for two-state atoms in an optical cavity,” Phys. Rev. Lett. 63(3), 240–243 (1989).
[Crossref] [PubMed]

An, Z.

André, R.

J. Kasprzak, D. D. Solnyshkov, R. André, S. Dang, and G. Malpuech, “Formation of an exciton polariton condensate: thermodynamic versus kinetic Regimes,” Phys. Rev. Lett. 101(14), 146404 (2008).
[Crossref] [PubMed]

J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and S. Dang, “Bose-Einstein condensation of exciton polaritons,” Nature 443(7110), 409–414 (2006).
[Crossref] [PubMed]

Arakawa, Y.

C. Weisbuch, M. Nishioka, A. Ishikawa, and Y. Arakawa, “Observation of the coupled exciton-photon mode splitting in a semiconductor quantum microcavity,” Phys. Rev. Lett. 69(23), 3314–3317 (1992).
[Crossref] [PubMed]

Avrutin, V.

R. Shimada, J. Xie, V. Avrutin, Ü. Özgür, and H. Morkoč, “Cavity polaritons in ZnO-based hybrid microcavities,” Appl. Phys. Lett. 92(1), 011127 (2008).
[Crossref]

Baas, A.

J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and S. Dang, “Bose-Einstein condensation of exciton polaritons,” Nature 443(7110), 409–414 (2006).
[Crossref] [PubMed]

Bajoni, D.

D. Bajoni, P. Senellart, E. Wertz, I. Sagnes, A. Miard, A. Lemaître, and J. Bloch, “Polariton Laser Using Single Micropillar GaAs-GaAlAs Semiconductor Cavities,” Phys. Rev. Lett. 100(4), 047401 (2008).
[Crossref] [PubMed]

Balili, R.

R. Balili, V. Hartwell, D. Snoke, L. Pfeiffer, and K. West, “Bose-Einstein condensation of microcavity polaritons in a trap,” Science 316(5827), 1007–1010 (2007).
[Crossref] [PubMed]

Baratto, C.

G. Jacopin, L. Rigutti, A. L. Bugallo, F. H. Julien, C. Baratto, E. Comini, M. Ferroni, and M. Tchernycheva, “High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires,” Nanoscale Res. Lett. 6(1), 501 (2011).
[Crossref] [PubMed]

Bassani, F.

Y. Chen, A. Tredicucci, and F. Bassani, “Bulk exciton polaritons in GaAs microcavities,” Phys. Rev. B 52(3), 1800–1805 (1995).
[Crossref]

Baumberg, J. J.

S. Christopoulos, G. B. von Högersthal, A. J. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Benndorf, G.

R. Schmidt-Grund, B. Rheinländer, C. Czekalla, G. Benndorf, H. Hochmuth, M. Lorenz, and M. Grundmann, “Exciton–polariton formation at room temperature in a planar ZnO resonator structure,” Appl. Phys. B 93(2-3), 331–337 (2008).
[Crossref]

Bhattacharya, P.

A. Das, J. Heo, M. Jankowski, W. Guo, L. Zhang, H. Deng, and P. Bhattacharya, “Room temperature ultralow threshold GaN nanowire polariton laser,” Phys. Rev. Lett. 107(6), 066405 (2011).
[Crossref] [PubMed]

Bloch, J.

D. Bajoni, P. Senellart, E. Wertz, I. Sagnes, A. Miard, A. Lemaître, and J. Bloch, “Polariton Laser Using Single Micropillar GaAs-GaAlAs Semiconductor Cavities,” Phys. Rev. Lett. 100(4), 047401 (2008).
[Crossref] [PubMed]

H. Deng, G. Weihs, D. Snoke, J. Bloch, and Y. Yamamoto, “Polariton lasing vs. photon lasing in a semiconductor microcavity,” Proc. Natl. Acad. Sci. U.S.A. 100(26), 15318–15323 (2003).
[Crossref] [PubMed]

H. Deng, G. Weihs, C. Santori, J. Bloch, and Y. Yamamoto, “Condensation of semiconductor microcavity exciton polaritons,” Science 298(5591), 199–202 (2002).
[Crossref] [PubMed]

Bouchoule, S.

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011).
[Crossref]

Brecha, R. J.

M. G. Raizen, R. J. Thompson, R. J. Brecha, H. J. Kimble, and H. J. Carmichael, “Normal-mode splitting and linewidth averaging for two-state atoms in an optical cavity,” Phys. Rev. Lett. 63(3), 240–243 (1989).
[Crossref] [PubMed]

Bretagnon, T.

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011).
[Crossref]

S. Faure, T. Guillet, P. Lefebvre, T. Bretagnon, and B. Gil, “Comparison of strong coupling regimes in bulk GaAs, GaN, and ZnO semiconductor microcavities,” Phys. Rev. B 78(23), 235323 (2008).
[Crossref]

Brimont, C.

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011).
[Crossref]

Bugallo, A. L.

G. Jacopin, L. Rigutti, A. L. Bugallo, F. H. Julien, C. Baratto, E. Comini, M. Ferroni, and M. Tchernycheva, “High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires,” Nanoscale Res. Lett. 6(1), 501 (2011).
[Crossref] [PubMed]

Butté, R.

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011).
[Crossref]

J. Levrat, R. Butté, E. Feltin, J.-F. Carlin, N. Grandjean, D. Solnyshkov, and G. Malpuech, “Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory,” Phys. Rev. B 81(12), 125305 (2010).
[Crossref]

G. Christmann, R. Butté, E. Feltin, A. Mouti, P. Stadelmann, A. Castiglia, J.-F. Carlin, and N. Grandjean, “Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime,” Phys. Rev. B 77(8), 085310 (2008).
[Crossref]

G. Christmann, R. Butté, E. Feltin, J. Carlin, and N. Grandjean, “Room temperature polariton lasing in a GaN/AlGaNmultiple quantum well microcavity,” Appl. Phys. Lett. 93(5), 051102 (2008).
[Crossref]

S. Christopoulos, G. B. von Högersthal, A. J. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Carlin, J.

G. Christmann, R. Butté, E. Feltin, J. Carlin, and N. Grandjean, “Room temperature polariton lasing in a GaN/AlGaNmultiple quantum well microcavity,” Appl. Phys. Lett. 93(5), 051102 (2008).
[Crossref]

Carlin, J. F.

S. Christopoulos, G. B. von Högersthal, A. J. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Carlin, J.-F.

J. Levrat, R. Butté, E. Feltin, J.-F. Carlin, N. Grandjean, D. Solnyshkov, and G. Malpuech, “Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory,” Phys. Rev. B 81(12), 125305 (2010).
[Crossref]

G. Christmann, R. Butté, E. Feltin, A. Mouti, P. Stadelmann, A. Castiglia, J.-F. Carlin, and N. Grandjean, “Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime,” Phys. Rev. B 77(8), 085310 (2008).
[Crossref]

Carmichael, H. J.

Y. Zhu, D. J. Gauthier, S. E. Morin, Q. Wu, H. J. Carmichael, and T. W. Mossberg, “Vacuum Rabi splitting as a feature of linear-dispersion theory: Analysis and experimental observations,” Phys. Rev. Lett. 64(21), 2499–2502 (1990).
[Crossref] [PubMed]

M. G. Raizen, R. J. Thompson, R. J. Brecha, H. J. Kimble, and H. J. Carmichael, “Normal-mode splitting and linewidth averaging for two-state atoms in an optical cavity,” Phys. Rev. Lett. 63(3), 240–243 (1989).
[Crossref] [PubMed]

Castiglia, A.

G. Christmann, R. Butté, E. Feltin, A. Mouti, P. Stadelmann, A. Castiglia, J.-F. Carlin, and N. Grandjean, “Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime,” Phys. Rev. B 77(8), 085310 (2008).
[Crossref]

Chen, J.-R.

J.-R. Chen, T.-C. Lu, Y.-C. Wu, S.-C. Lin, W.-R. Liu, W.-F. Hsieh, C.-C. Kuo, and C.-C. Lee, “Large vacuum Rabi splitting in ZnO-based hybrid microcavities observed at room temperature,” Appl. Phys. Lett. 94(6), 061103 (2009).
[Crossref]

Chen, Y.

Y. Chen, A. Tredicucci, and F. Bassani, “Bulk exciton polaritons in GaAs microcavities,” Phys. Rev. B 52(3), 1800–1805 (1995).
[Crossref]

Chen, Z.

Christmann, G.

G. Christmann, R. Butté, E. Feltin, J. Carlin, and N. Grandjean, “Room temperature polariton lasing in a GaN/AlGaNmultiple quantum well microcavity,” Appl. Phys. Lett. 93(5), 051102 (2008).
[Crossref]

G. Christmann, R. Butté, E. Feltin, A. Mouti, P. Stadelmann, A. Castiglia, J.-F. Carlin, and N. Grandjean, “Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime,” Phys. Rev. B 77(8), 085310 (2008).
[Crossref]

S. Christopoulos, G. B. von Högersthal, A. J. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Christopoulos, S.

S. Christopoulos, G. B. von Högersthal, A. J. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Comini, E.

G. Jacopin, L. Rigutti, A. L. Bugallo, F. H. Julien, C. Baratto, E. Comini, M. Ferroni, and M. Tchernycheva, “High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires,” Nanoscale Res. Lett. 6(1), 501 (2011).
[Crossref] [PubMed]

Czekalla, C.

R. Schmidt-Grund, B. Rheinländer, C. Czekalla, G. Benndorf, H. Hochmuth, M. Lorenz, and M. Grundmann, “Exciton–polariton formation at room temperature in a planar ZnO resonator structure,” Appl. Phys. B 93(2-3), 331–337 (2008).
[Crossref]

Dang, S.

J. Kasprzak, D. D. Solnyshkov, R. André, S. Dang, and G. Malpuech, “Formation of an exciton polariton condensate: thermodynamic versus kinetic Regimes,” Phys. Rev. Lett. 101(14), 146404 (2008).
[Crossref] [PubMed]

J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and S. Dang, “Bose-Einstein condensation of exciton polaritons,” Nature 443(7110), 409–414 (2006).
[Crossref] [PubMed]

Das, A.

A. Das, J. Heo, M. Jankowski, W. Guo, L. Zhang, H. Deng, and P. Bhattacharya, “Room temperature ultralow threshold GaN nanowire polariton laser,” Phys. Rev. Lett. 107(6), 066405 (2011).
[Crossref] [PubMed]

Deng, H.

A. Das, J. Heo, M. Jankowski, W. Guo, L. Zhang, H. Deng, and P. Bhattacharya, “Room temperature ultralow threshold GaN nanowire polariton laser,” Phys. Rev. Lett. 107(6), 066405 (2011).
[Crossref] [PubMed]

H. Deng, H. Haug, and Y. Yamamoto, “Exciton-polariton Bose-Einstein condensation,” Rev. Mod. Phys. 82(2), 1489–1537 (2010).
[Crossref]

H. Deng, D. Press, S. Götzinger, G. S. Solomon, R. Hey, K. H. Ploog, and Y. Yamamoto, “Quantum degenerate exciton-polaritons in thermal equilibrium,” Phys. Rev. Lett. 97(14), 146402 (2006).
[Crossref] [PubMed]

H. Deng, G. Weihs, D. Snoke, J. Bloch, and Y. Yamamoto, “Polariton lasing vs. photon lasing in a semiconductor microcavity,” Proc. Natl. Acad. Sci. U.S.A. 100(26), 15318–15323 (2003).
[Crossref] [PubMed]

H. Deng, G. Weihs, C. Santori, J. Bloch, and Y. Yamamoto, “Condensation of semiconductor microcavity exciton polaritons,” Science 298(5591), 199–202 (2002).
[Crossref] [PubMed]

Deveaud, B.

J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and S. Dang, “Bose-Einstein condensation of exciton polaritons,” Nature 443(7110), 409–414 (2006).
[Crossref] [PubMed]

Dong, H.

Fallert, J.

C. Klingshirn, J. Fallert, H. Zhou, J. Sartor, C. Thiele, F. Maier-Flaig, D. Schneider, and H. Kalt, “65 years of ZnO research – old and very recent results,” Phys. Status Solidi, B Basic Res. 247(6), 1424–1447 (2010).
[Crossref]

Faure, S.

S. Faure, T. Guillet, P. Lefebvre, T. Bretagnon, and B. Gil, “Comparison of strong coupling regimes in bulk GaAs, GaN, and ZnO semiconductor microcavities,” Phys. Rev. B 78(23), 235323 (2008).
[Crossref]

Feltin, E.

J. Levrat, R. Butté, E. Feltin, J.-F. Carlin, N. Grandjean, D. Solnyshkov, and G. Malpuech, “Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory,” Phys. Rev. B 81(12), 125305 (2010).
[Crossref]

G. Christmann, R. Butté, E. Feltin, A. Mouti, P. Stadelmann, A. Castiglia, J.-F. Carlin, and N. Grandjean, “Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime,” Phys. Rev. B 77(8), 085310 (2008).
[Crossref]

G. Christmann, R. Butté, E. Feltin, J. Carlin, and N. Grandjean, “Room temperature polariton lasing in a GaN/AlGaNmultiple quantum well microcavity,” Appl. Phys. Lett. 93(5), 051102 (2008).
[Crossref]

S. Christopoulos, G. B. von Högersthal, A. J. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Ferroni, M.

G. Jacopin, L. Rigutti, A. L. Bugallo, F. H. Julien, C. Baratto, E. Comini, M. Ferroni, and M. Tchernycheva, “High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires,” Nanoscale Res. Lett. 6(1), 501 (2011).
[Crossref] [PubMed]

Forchel, A.

J. P. Reithmaier, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, and A. Forchel, “Strong coupling in a single quantum dot-semiconductor microcavity system,” Nature 432(7014), 197–200 (2004).
[Crossref] [PubMed]

Gauthier, D. J.

Y. Zhu, D. J. Gauthier, S. E. Morin, Q. Wu, H. J. Carmichael, and T. W. Mossberg, “Vacuum Rabi splitting as a feature of linear-dispersion theory: Analysis and experimental observations,” Phys. Rev. Lett. 64(21), 2499–2502 (1990).
[Crossref] [PubMed]

Gerritsen, H. C.

L. K. van Vugt, S. Rühle, P. Ravindran, H. C. Gerritsen, L. Kuipers, and D. Vanmaekelbergh, “Exciton polaritons confined in a ZnO nanowire cavity,” Phys. Rev. Lett. 97(14), 147401 (2006).
[Crossref] [PubMed]

Gibbs, H. M.

G. Khitrova, H. M. Gibbs, F. Jahnke, M. Kira, and S. W. Koch, “Nonlinear optics of normal-mode-coupling semiconductor microcavities,” Rev. Mod. Phys. 71(5), 1591–1639 (1999).
[Crossref]

Gil, B.

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011).
[Crossref]

S. Faure, T. Guillet, P. Lefebvre, T. Bretagnon, and B. Gil, “Comparison of strong coupling regimes in bulk GaAs, GaN, and ZnO semiconductor microcavities,” Phys. Rev. B 78(23), 235323 (2008).
[Crossref]

M. Zamfirescu, A. Kavokin, B. Gil, G. Malpuech, and M. Kaliteevski, “ZnO as a material mostly adapted for the realization of room-temperature polariton lasers,” Phys. Rev. B 65(16), 161205 (2002).
[Crossref]

Götzinger, S.

H. Deng, D. Press, S. Götzinger, G. S. Solomon, R. Hey, K. H. Ploog, and Y. Yamamoto, “Quantum degenerate exciton-polaritons in thermal equilibrium,” Phys. Rev. Lett. 97(14), 146402 (2006).
[Crossref] [PubMed]

Grandjean, N.

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011).
[Crossref]

J. Levrat, R. Butté, E. Feltin, J.-F. Carlin, N. Grandjean, D. Solnyshkov, and G. Malpuech, “Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory,” Phys. Rev. B 81(12), 125305 (2010).
[Crossref]

G. Christmann, R. Butté, E. Feltin, A. Mouti, P. Stadelmann, A. Castiglia, J.-F. Carlin, and N. Grandjean, “Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime,” Phys. Rev. B 77(8), 085310 (2008).
[Crossref]

G. Christmann, R. Butté, E. Feltin, J. Carlin, and N. Grandjean, “Room temperature polariton lasing in a GaN/AlGaNmultiple quantum well microcavity,” Appl. Phys. Lett. 93(5), 051102 (2008).
[Crossref]

S. Christopoulos, G. B. von Högersthal, A. J. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Grundmann, M.

R. Schmidt-Grund, B. Rheinländer, C. Czekalla, G. Benndorf, H. Hochmuth, M. Lorenz, and M. Grundmann, “Exciton–polariton formation at room temperature in a planar ZnO resonator structure,” Appl. Phys. B 93(2-3), 331–337 (2008).
[Crossref]

Grundy, A. J.

S. Christopoulos, G. B. von Högersthal, A. J. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Guillet, T.

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011).
[Crossref]

S. Faure, T. Guillet, P. Lefebvre, T. Bretagnon, and B. Gil, “Comparison of strong coupling regimes in bulk GaAs, GaN, and ZnO semiconductor microcavities,” Phys. Rev. B 78(23), 235323 (2008).
[Crossref]

Guo, W.

A. Das, J. Heo, M. Jankowski, W. Guo, L. Zhang, H. Deng, and P. Bhattacharya, “Room temperature ultralow threshold GaN nanowire polariton laser,” Phys. Rev. Lett. 107(6), 066405 (2011).
[Crossref] [PubMed]

Hartwell, V.

R. Balili, V. Hartwell, D. Snoke, L. Pfeiffer, and K. West, “Bose-Einstein condensation of microcavity polaritons in a trap,” Science 316(5827), 1007–1010 (2007).
[Crossref] [PubMed]

Haug, H.

H. Deng, H. Haug, and Y. Yamamoto, “Exciton-polariton Bose-Einstein condensation,” Rev. Mod. Phys. 82(2), 1489–1537 (2010).
[Crossref]

Heo, J.

A. Das, J. Heo, M. Jankowski, W. Guo, L. Zhang, H. Deng, and P. Bhattacharya, “Room temperature ultralow threshold GaN nanowire polariton laser,” Phys. Rev. Lett. 107(6), 066405 (2011).
[Crossref] [PubMed]

Hey, R.

H. Deng, D. Press, S. Götzinger, G. S. Solomon, R. Hey, K. H. Ploog, and Y. Yamamoto, “Quantum degenerate exciton-polaritons in thermal equilibrium,” Phys. Rev. Lett. 97(14), 146402 (2006).
[Crossref] [PubMed]

Hochmuth, H.

R. Schmidt-Grund, B. Rheinländer, C. Czekalla, G. Benndorf, H. Hochmuth, M. Lorenz, and M. Grundmann, “Exciton–polariton formation at room temperature in a planar ZnO resonator structure,” Appl. Phys. B 93(2-3), 331–337 (2008).
[Crossref]

Hofmann, C.

J. P. Reithmaier, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, and A. Forchel, “Strong coupling in a single quantum dot-semiconductor microcavity system,” Nature 432(7014), 197–200 (2004).
[Crossref] [PubMed]

Hsieh, W.-F.

J.-R. Chen, T.-C. Lu, Y.-C. Wu, S.-C. Lin, W.-R. Liu, W.-F. Hsieh, C.-C. Kuo, and C.-C. Lee, “Large vacuum Rabi splitting in ZnO-based hybrid microcavities observed at room temperature,” Appl. Phys. Lett. 94(6), 061103 (2009).
[Crossref]

Imamog¯lu, A.

A. Imamog¯lu, R. J. Ram, S. Pau, and Y. Yamamoto, “Nonequilibrium condensates and lasers without inversion: Exciton-polariton lasers,” Phys. Rev. A 53(6), 4250–4253 (1996).
[Crossref] [PubMed]

Ishikawa, A.

C. Weisbuch, M. Nishioka, A. Ishikawa, and Y. Arakawa, “Observation of the coupled exciton-photon mode splitting in a semiconductor quantum microcavity,” Phys. Rev. Lett. 69(23), 3314–3317 (1992).
[Crossref] [PubMed]

Jacopin, G.

G. Jacopin, L. Rigutti, A. L. Bugallo, F. H. Julien, C. Baratto, E. Comini, M. Ferroni, and M. Tchernycheva, “High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires,” Nanoscale Res. Lett. 6(1), 501 (2011).
[Crossref] [PubMed]

Jahnke, F.

G. Khitrova, H. M. Gibbs, F. Jahnke, M. Kira, and S. W. Koch, “Nonlinear optics of normal-mode-coupling semiconductor microcavities,” Rev. Mod. Phys. 71(5), 1591–1639 (1999).
[Crossref]

Jankowski, M.

A. Das, J. Heo, M. Jankowski, W. Guo, L. Zhang, H. Deng, and P. Bhattacharya, “Room temperature ultralow threshold GaN nanowire polariton laser,” Phys. Rev. Lett. 107(6), 066405 (2011).
[Crossref] [PubMed]

Jeambrun, P.

J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and S. Dang, “Bose-Einstein condensation of exciton polaritons,” Nature 443(7110), 409–414 (2006).
[Crossref] [PubMed]

Johne, R.

R. Johne, D. D. Solnyshkov, and G. Malpuech, “Theory of exciton-polariton lasing at room temperature in ZnO microcavities,” Appl. Phys. Lett. 93(21), 211105 (2008).
[Crossref]

Julien, F. H.

G. Jacopin, L. Rigutti, A. L. Bugallo, F. H. Julien, C. Baratto, E. Comini, M. Ferroni, and M. Tchernycheva, “High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires,” Nanoscale Res. Lett. 6(1), 501 (2011).
[Crossref] [PubMed]

Kaliteevski, M.

M. Zamfirescu, A. Kavokin, B. Gil, G. Malpuech, and M. Kaliteevski, “ZnO as a material mostly adapted for the realization of room-temperature polariton lasers,” Phys. Rev. B 65(16), 161205 (2002).
[Crossref]

Kalt, H.

C. Klingshirn, J. Fallert, H. Zhou, J. Sartor, C. Thiele, F. Maier-Flaig, D. Schneider, and H. Kalt, “65 years of ZnO research – old and very recent results,” Phys. Status Solidi, B Basic Res. 247(6), 1424–1447 (2010).
[Crossref]

Kasprzak, J.

J. Kasprzak, D. D. Solnyshkov, R. André, S. Dang, and G. Malpuech, “Formation of an exciton polariton condensate: thermodynamic versus kinetic Regimes,” Phys. Rev. Lett. 101(14), 146404 (2008).
[Crossref] [PubMed]

J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and S. Dang, “Bose-Einstein condensation of exciton polaritons,” Nature 443(7110), 409–414 (2006).
[Crossref] [PubMed]

Kavokin, A.

M. Zamfirescu, A. Kavokin, B. Gil, G. Malpuech, and M. Kaliteevski, “ZnO as a material mostly adapted for the realization of room-temperature polariton lasers,” Phys. Rev. B 65(16), 161205 (2002).
[Crossref]

Kavokin, A. V.

S. Christopoulos, G. B. von Högersthal, A. J. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Keeling, J. M. J.

J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and S. Dang, “Bose-Einstein condensation of exciton polaritons,” Nature 443(7110), 409–414 (2006).
[Crossref] [PubMed]

Keldysh, L. V.

J. P. Reithmaier, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, and A. Forchel, “Strong coupling in a single quantum dot-semiconductor microcavity system,” Nature 432(7014), 197–200 (2004).
[Crossref] [PubMed]

Khitrova, G.

G. Khitrova, H. M. Gibbs, F. Jahnke, M. Kira, and S. W. Koch, “Nonlinear optics of normal-mode-coupling semiconductor microcavities,” Rev. Mod. Phys. 71(5), 1591–1639 (1999).
[Crossref]

Kimble, H. J.

M. G. Raizen, R. J. Thompson, R. J. Brecha, H. J. Kimble, and H. J. Carmichael, “Normal-mode splitting and linewidth averaging for two-state atoms in an optical cavity,” Phys. Rev. Lett. 63(3), 240–243 (1989).
[Crossref] [PubMed]

Kira, M.

G. Khitrova, H. M. Gibbs, F. Jahnke, M. Kira, and S. W. Koch, “Nonlinear optics of normal-mode-coupling semiconductor microcavities,” Rev. Mod. Phys. 71(5), 1591–1639 (1999).
[Crossref]

Klingshirn, C.

C. Klingshirn, J. Fallert, H. Zhou, J. Sartor, C. Thiele, F. Maier-Flaig, D. Schneider, and H. Kalt, “65 years of ZnO research – old and very recent results,” Phys. Status Solidi, B Basic Res. 247(6), 1424–1447 (2010).
[Crossref]

Koch, S. W.

G. Khitrova, H. M. Gibbs, F. Jahnke, M. Kira, and S. W. Koch, “Nonlinear optics of normal-mode-coupling semiconductor microcavities,” Rev. Mod. Phys. 71(5), 1591–1639 (1999).
[Crossref]

Kuhn, S.

J. P. Reithmaier, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, and A. Forchel, “Strong coupling in a single quantum dot-semiconductor microcavity system,” Nature 432(7014), 197–200 (2004).
[Crossref] [PubMed]

Kuipers, L.

L. K. van Vugt, S. Rühle, P. Ravindran, H. C. Gerritsen, L. Kuipers, and D. Vanmaekelbergh, “Exciton polaritons confined in a ZnO nanowire cavity,” Phys. Rev. Lett. 97(14), 147401 (2006).
[Crossref] [PubMed]

Kulakovskii, V. D.

J. P. Reithmaier, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, and A. Forchel, “Strong coupling in a single quantum dot-semiconductor microcavity system,” Nature 432(7014), 197–200 (2004).
[Crossref] [PubMed]

Kundermann, S.

J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and S. Dang, “Bose-Einstein condensation of exciton polaritons,” Nature 443(7110), 409–414 (2006).
[Crossref] [PubMed]

Kuo, C.-C.

J.-R. Chen, T.-C. Lu, Y.-C. Wu, S.-C. Lin, W.-R. Liu, W.-F. Hsieh, C.-C. Kuo, and C.-C. Lee, “Large vacuum Rabi splitting in ZnO-based hybrid microcavities observed at room temperature,” Appl. Phys. Lett. 94(6), 061103 (2009).
[Crossref]

Lagoudakis, P. G.

S. Christopoulos, G. B. von Högersthal, A. J. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Lee, C.-C.

J.-R. Chen, T.-C. Lu, Y.-C. Wu, S.-C. Lin, W.-R. Liu, W.-F. Hsieh, C.-C. Kuo, and C.-C. Lee, “Large vacuum Rabi splitting in ZnO-based hybrid microcavities observed at room temperature,” Appl. Phys. Lett. 94(6), 061103 (2009).
[Crossref]

Lefebvre, P.

S. Faure, T. Guillet, P. Lefebvre, T. Bretagnon, and B. Gil, “Comparison of strong coupling regimes in bulk GaAs, GaN, and ZnO semiconductor microcavities,” Phys. Rev. B 78(23), 235323 (2008).
[Crossref]

Lemaître, A.

D. Bajoni, P. Senellart, E. Wertz, I. Sagnes, A. Miard, A. Lemaître, and J. Bloch, “Polariton Laser Using Single Micropillar GaAs-GaAlAs Semiconductor Cavities,” Phys. Rev. Lett. 100(4), 047401 (2008).
[Crossref] [PubMed]

Leroux, M.

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011).
[Crossref]

Levrat, J.

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011).
[Crossref]

J. Levrat, R. Butté, E. Feltin, J.-F. Carlin, N. Grandjean, D. Solnyshkov, and G. Malpuech, “Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory,” Phys. Rev. B 81(12), 125305 (2010).
[Crossref]

Leymarie, J.

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011).
[Crossref]

Lin, S.-C.

J.-R. Chen, T.-C. Lu, Y.-C. Wu, S.-C. Lin, W.-R. Liu, W.-F. Hsieh, C.-C. Kuo, and C.-C. Lee, “Large vacuum Rabi splitting in ZnO-based hybrid microcavities observed at room temperature,” Appl. Phys. Lett. 94(6), 061103 (2009).
[Crossref]

Littlewood, P. B.

J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and S. Dang, “Bose-Einstein condensation of exciton polaritons,” Nature 443(7110), 409–414 (2006).
[Crossref] [PubMed]

Liu, W.-R.

J.-R. Chen, T.-C. Lu, Y.-C. Wu, S.-C. Lin, W.-R. Liu, W.-F. Hsieh, C.-C. Kuo, and C.-C. Lee, “Large vacuum Rabi splitting in ZnO-based hybrid microcavities observed at room temperature,” Appl. Phys. Lett. 94(6), 061103 (2009).
[Crossref]

Löffler, A.

J. P. Reithmaier, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, and A. Forchel, “Strong coupling in a single quantum dot-semiconductor microcavity system,” Nature 432(7014), 197–200 (2004).
[Crossref] [PubMed]

Lorenz, M.

R. Schmidt-Grund, B. Rheinländer, C. Czekalla, G. Benndorf, H. Hochmuth, M. Lorenz, and M. Grundmann, “Exciton–polariton formation at room temperature in a planar ZnO resonator structure,” Appl. Phys. B 93(2-3), 331–337 (2008).
[Crossref]

Lu, T.-C.

J.-R. Chen, T.-C. Lu, Y.-C. Wu, S.-C. Lin, W.-R. Liu, W.-F. Hsieh, C.-C. Kuo, and C.-C. Lee, “Large vacuum Rabi splitting in ZnO-based hybrid microcavities observed at room temperature,” Appl. Phys. Lett. 94(6), 061103 (2009).
[Crossref]

Maier-Flaig, F.

C. Klingshirn, J. Fallert, H. Zhou, J. Sartor, C. Thiele, F. Maier-Flaig, D. Schneider, and H. Kalt, “65 years of ZnO research – old and very recent results,” Phys. Status Solidi, B Basic Res. 247(6), 1424–1447 (2010).
[Crossref]

Malpuech, G.

J. Levrat, R. Butté, E. Feltin, J.-F. Carlin, N. Grandjean, D. Solnyshkov, and G. Malpuech, “Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory,” Phys. Rev. B 81(12), 125305 (2010).
[Crossref]

R. Johne, D. D. Solnyshkov, and G. Malpuech, “Theory of exciton-polariton lasing at room temperature in ZnO microcavities,” Appl. Phys. Lett. 93(21), 211105 (2008).
[Crossref]

J. Kasprzak, D. D. Solnyshkov, R. André, S. Dang, and G. Malpuech, “Formation of an exciton polariton condensate: thermodynamic versus kinetic Regimes,” Phys. Rev. Lett. 101(14), 146404 (2008).
[Crossref] [PubMed]

M. Zamfirescu, A. Kavokin, B. Gil, G. Malpuech, and M. Kaliteevski, “ZnO as a material mostly adapted for the realization of room-temperature polariton lasers,” Phys. Rev. B 65(16), 161205 (2002).
[Crossref]

Marchetti, F. M.

J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and S. Dang, “Bose-Einstein condensation of exciton polaritons,” Nature 443(7110), 409–414 (2006).
[Crossref] [PubMed]

Mexis, M.

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011).
[Crossref]

Miard, A.

D. Bajoni, P. Senellart, E. Wertz, I. Sagnes, A. Miard, A. Lemaître, and J. Bloch, “Polariton Laser Using Single Micropillar GaAs-GaAlAs Semiconductor Cavities,” Phys. Rev. Lett. 100(4), 047401 (2008).
[Crossref] [PubMed]

Morin, S. E.

Y. Zhu, D. J. Gauthier, S. E. Morin, Q. Wu, H. J. Carmichael, and T. W. Mossberg, “Vacuum Rabi splitting as a feature of linear-dispersion theory: Analysis and experimental observations,” Phys. Rev. Lett. 64(21), 2499–2502 (1990).
[Crossref] [PubMed]

Morkoc, H.

R. Shimada, J. Xie, V. Avrutin, Ü. Özgür, and H. Morkoč, “Cavity polaritons in ZnO-based hybrid microcavities,” Appl. Phys. Lett. 92(1), 011127 (2008).
[Crossref]

Mossberg, T. W.

Y. Zhu, D. J. Gauthier, S. E. Morin, Q. Wu, H. J. Carmichael, and T. W. Mossberg, “Vacuum Rabi splitting as a feature of linear-dispersion theory: Analysis and experimental observations,” Phys. Rev. Lett. 64(21), 2499–2502 (1990).
[Crossref] [PubMed]

Mouti, A.

G. Christmann, R. Butté, E. Feltin, A. Mouti, P. Stadelmann, A. Castiglia, J.-F. Carlin, and N. Grandjean, “Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime,” Phys. Rev. B 77(8), 085310 (2008).
[Crossref]

Nishioka, M.

C. Weisbuch, M. Nishioka, A. Ishikawa, and Y. Arakawa, “Observation of the coupled exciton-photon mode splitting in a semiconductor quantum microcavity,” Phys. Rev. Lett. 69(23), 3314–3317 (1992).
[Crossref] [PubMed]

Orosz, L.

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011).
[Crossref]

Özgür, Ü.

R. Shimada, J. Xie, V. Avrutin, Ü. Özgür, and H. Morkoč, “Cavity polaritons in ZnO-based hybrid microcavities,” Appl. Phys. Lett. 92(1), 011127 (2008).
[Crossref]

Pau, S.

A. Imamog¯lu, R. J. Ram, S. Pau, and Y. Yamamoto, “Nonequilibrium condensates and lasers without inversion: Exciton-polariton lasers,” Phys. Rev. A 53(6), 4250–4253 (1996).
[Crossref] [PubMed]

Pfeiffer, L.

R. Balili, V. Hartwell, D. Snoke, L. Pfeiffer, and K. West, “Bose-Einstein condensation of microcavity polaritons in a trap,” Science 316(5827), 1007–1010 (2007).
[Crossref] [PubMed]

Ploog, K. H.

H. Deng, D. Press, S. Götzinger, G. S. Solomon, R. Hey, K. H. Ploog, and Y. Yamamoto, “Quantum degenerate exciton-polaritons in thermal equilibrium,” Phys. Rev. Lett. 97(14), 146402 (2006).
[Crossref] [PubMed]

Press, D.

H. Deng, D. Press, S. Götzinger, G. S. Solomon, R. Hey, K. H. Ploog, and Y. Yamamoto, “Quantum degenerate exciton-polaritons in thermal equilibrium,” Phys. Rev. Lett. 97(14), 146402 (2006).
[Crossref] [PubMed]

Qi, J.

L. Wang, X. Zhang, S. Zhao, G. Zhou, Y. Zhou, and J. Qi, “Synthesis of well-aligned ZnO nanowires by simple physical vapor deposition on c-oriented ZnO thin films without catalysts or additives,” Appl. Phys. Lett. 86(2), 024108 (2005).
[Crossref]

Raizen, M. G.

M. G. Raizen, R. J. Thompson, R. J. Brecha, H. J. Kimble, and H. J. Carmichael, “Normal-mode splitting and linewidth averaging for two-state atoms in an optical cavity,” Phys. Rev. Lett. 63(3), 240–243 (1989).
[Crossref] [PubMed]

Ram, R. J.

A. Imamog¯lu, R. J. Ram, S. Pau, and Y. Yamamoto, “Nonequilibrium condensates and lasers without inversion: Exciton-polariton lasers,” Phys. Rev. A 53(6), 4250–4253 (1996).
[Crossref] [PubMed]

Ravindran, P.

L. K. van Vugt, S. Rühle, P. Ravindran, H. C. Gerritsen, L. Kuipers, and D. Vanmaekelbergh, “Exciton polaritons confined in a ZnO nanowire cavity,” Phys. Rev. Lett. 97(14), 147401 (2006).
[Crossref] [PubMed]

Reinecke, T. L.

J. P. Reithmaier, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, and A. Forchel, “Strong coupling in a single quantum dot-semiconductor microcavity system,” Nature 432(7014), 197–200 (2004).
[Crossref] [PubMed]

Reithmaier, J. P.

J. P. Reithmaier, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, and A. Forchel, “Strong coupling in a single quantum dot-semiconductor microcavity system,” Nature 432(7014), 197–200 (2004).
[Crossref] [PubMed]

Reitzenstein, S.

J. P. Reithmaier, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, and A. Forchel, “Strong coupling in a single quantum dot-semiconductor microcavity system,” Nature 432(7014), 197–200 (2004).
[Crossref] [PubMed]

Réveret, F.

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011).
[Crossref]

Rheinländer, B.

R. Schmidt-Grund, B. Rheinländer, C. Czekalla, G. Benndorf, H. Hochmuth, M. Lorenz, and M. Grundmann, “Exciton–polariton formation at room temperature in a planar ZnO resonator structure,” Appl. Phys. B 93(2-3), 331–337 (2008).
[Crossref]

Richard, M.

J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and S. Dang, “Bose-Einstein condensation of exciton polaritons,” Nature 443(7110), 409–414 (2006).
[Crossref] [PubMed]

Rigutti, L.

G. Jacopin, L. Rigutti, A. L. Bugallo, F. H. Julien, C. Baratto, E. Comini, M. Ferroni, and M. Tchernycheva, “High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires,” Nanoscale Res. Lett. 6(1), 501 (2011).
[Crossref] [PubMed]

Rossbach, G.

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011).
[Crossref]

Rühle, S.

L. K. van Vugt, S. Rühle, P. Ravindran, H. C. Gerritsen, L. Kuipers, and D. Vanmaekelbergh, “Exciton polaritons confined in a ZnO nanowire cavity,” Phys. Rev. Lett. 97(14), 147401 (2006).
[Crossref] [PubMed]

Sagnes, I.

D. Bajoni, P. Senellart, E. Wertz, I. Sagnes, A. Miard, A. Lemaître, and J. Bloch, “Polariton Laser Using Single Micropillar GaAs-GaAlAs Semiconductor Cavities,” Phys. Rev. Lett. 100(4), 047401 (2008).
[Crossref] [PubMed]

Santori, C.

H. Deng, G. Weihs, C. Santori, J. Bloch, and Y. Yamamoto, “Condensation of semiconductor microcavity exciton polaritons,” Science 298(5591), 199–202 (2002).
[Crossref] [PubMed]

Sartor, J.

C. Klingshirn, J. Fallert, H. Zhou, J. Sartor, C. Thiele, F. Maier-Flaig, D. Schneider, and H. Kalt, “65 years of ZnO research – old and very recent results,” Phys. Status Solidi, B Basic Res. 247(6), 1424–1447 (2010).
[Crossref]

Savona, V.

J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and S. Dang, “Bose-Einstein condensation of exciton polaritons,” Nature 443(7110), 409–414 (2006).
[Crossref] [PubMed]

Schmidt-Grund, R.

R. Schmidt-Grund, B. Rheinländer, C. Czekalla, G. Benndorf, H. Hochmuth, M. Lorenz, and M. Grundmann, “Exciton–polariton formation at room temperature in a planar ZnO resonator structure,” Appl. Phys. B 93(2-3), 331–337 (2008).
[Crossref]

Schneider, D.

C. Klingshirn, J. Fallert, H. Zhou, J. Sartor, C. Thiele, F. Maier-Flaig, D. Schneider, and H. Kalt, “65 years of ZnO research – old and very recent results,” Phys. Status Solidi, B Basic Res. 247(6), 1424–1447 (2010).
[Crossref]

Sek, G.

J. P. Reithmaier, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, and A. Forchel, “Strong coupling in a single quantum dot-semiconductor microcavity system,” Nature 432(7014), 197–200 (2004).
[Crossref] [PubMed]

Semond, F.

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011).
[Crossref]

Senellart, P.

D. Bajoni, P. Senellart, E. Wertz, I. Sagnes, A. Miard, A. Lemaître, and J. Bloch, “Polariton Laser Using Single Micropillar GaAs-GaAlAs Semiconductor Cavities,” Phys. Rev. Lett. 100(4), 047401 (2008).
[Crossref] [PubMed]

Shen, X.

Shimada, R.

R. Shimada, J. Xie, V. Avrutin, Ü. Özgür, and H. Morkoč, “Cavity polaritons in ZnO-based hybrid microcavities,” Appl. Phys. Lett. 92(1), 011127 (2008).
[Crossref]

Snoke, D.

R. Balili, V. Hartwell, D. Snoke, L. Pfeiffer, and K. West, “Bose-Einstein condensation of microcavity polaritons in a trap,” Science 316(5827), 1007–1010 (2007).
[Crossref] [PubMed]

H. Deng, G. Weihs, D. Snoke, J. Bloch, and Y. Yamamoto, “Polariton lasing vs. photon lasing in a semiconductor microcavity,” Proc. Natl. Acad. Sci. U.S.A. 100(26), 15318–15323 (2003).
[Crossref] [PubMed]

Solnyshkov, D.

J. Levrat, R. Butté, E. Feltin, J.-F. Carlin, N. Grandjean, D. Solnyshkov, and G. Malpuech, “Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory,” Phys. Rev. B 81(12), 125305 (2010).
[Crossref]

Solnyshkov, D. D.

J. Kasprzak, D. D. Solnyshkov, R. André, S. Dang, and G. Malpuech, “Formation of an exciton polariton condensate: thermodynamic versus kinetic Regimes,” Phys. Rev. Lett. 101(14), 146404 (2008).
[Crossref] [PubMed]

R. Johne, D. D. Solnyshkov, and G. Malpuech, “Theory of exciton-polariton lasing at room temperature in ZnO microcavities,” Appl. Phys. Lett. 93(21), 211105 (2008).
[Crossref]

Solomon, G. S.

H. Deng, D. Press, S. Götzinger, G. S. Solomon, R. Hey, K. H. Ploog, and Y. Yamamoto, “Quantum degenerate exciton-polaritons in thermal equilibrium,” Phys. Rev. Lett. 97(14), 146402 (2006).
[Crossref] [PubMed]

Stadelmann, P.

G. Christmann, R. Butté, E. Feltin, A. Mouti, P. Stadelmann, A. Castiglia, J.-F. Carlin, and N. Grandjean, “Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime,” Phys. Rev. B 77(8), 085310 (2008).
[Crossref]

Staehli, J. L.

J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and S. Dang, “Bose-Einstein condensation of exciton polaritons,” Nature 443(7110), 409–414 (2006).
[Crossref] [PubMed]

Sun, L.

Szymanska, M. H.

J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and S. Dang, “Bose-Einstein condensation of exciton polaritons,” Nature 443(7110), 409–414 (2006).
[Crossref] [PubMed]

Tchernycheva, M.

G. Jacopin, L. Rigutti, A. L. Bugallo, F. H. Julien, C. Baratto, E. Comini, M. Ferroni, and M. Tchernycheva, “High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires,” Nanoscale Res. Lett. 6(1), 501 (2011).
[Crossref] [PubMed]

Thiele, C.

C. Klingshirn, J. Fallert, H. Zhou, J. Sartor, C. Thiele, F. Maier-Flaig, D. Schneider, and H. Kalt, “65 years of ZnO research – old and very recent results,” Phys. Status Solidi, B Basic Res. 247(6), 1424–1447 (2010).
[Crossref]

Thompson, R. J.

M. G. Raizen, R. J. Thompson, R. J. Brecha, H. J. Kimble, and H. J. Carmichael, “Normal-mode splitting and linewidth averaging for two-state atoms in an optical cavity,” Phys. Rev. Lett. 63(3), 240–243 (1989).
[Crossref] [PubMed]

Tredicucci, A.

Y. Chen, A. Tredicucci, and F. Bassani, “Bulk exciton polaritons in GaAs microcavities,” Phys. Rev. B 52(3), 1800–1805 (1995).
[Crossref]

van Vugt, L. K.

D. Vanmaekelbergh and L. K. van Vugt, “ZnO nanowire lasers,” Nanoscale 3(7), 2783–2800 (2011).
[Crossref] [PubMed]

L. K. van Vugt, S. Rühle, P. Ravindran, H. C. Gerritsen, L. Kuipers, and D. Vanmaekelbergh, “Exciton polaritons confined in a ZnO nanowire cavity,” Phys. Rev. Lett. 97(14), 147401 (2006).
[Crossref] [PubMed]

Vanmaekelbergh, D.

D. Vanmaekelbergh and L. K. van Vugt, “ZnO nanowire lasers,” Nanoscale 3(7), 2783–2800 (2011).
[Crossref] [PubMed]

L. K. van Vugt, S. Rühle, P. Ravindran, H. C. Gerritsen, L. Kuipers, and D. Vanmaekelbergh, “Exciton polaritons confined in a ZnO nanowire cavity,” Phys. Rev. Lett. 97(14), 147401 (2006).
[Crossref] [PubMed]

von Högersthal, G. B.

S. Christopoulos, G. B. von Högersthal, A. J. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Wang, L.

L. Wang, X. Zhang, S. Zhao, G. Zhou, Y. Zhou, and J. Qi, “Synthesis of well-aligned ZnO nanowires by simple physical vapor deposition on c-oriented ZnO thin films without catalysts or additives,” Appl. Phys. Lett. 86(2), 024108 (2005).
[Crossref]

Weihs, G.

H. Deng, G. Weihs, D. Snoke, J. Bloch, and Y. Yamamoto, “Polariton lasing vs. photon lasing in a semiconductor microcavity,” Proc. Natl. Acad. Sci. U.S.A. 100(26), 15318–15323 (2003).
[Crossref] [PubMed]

H. Deng, G. Weihs, C. Santori, J. Bloch, and Y. Yamamoto, “Condensation of semiconductor microcavity exciton polaritons,” Science 298(5591), 199–202 (2002).
[Crossref] [PubMed]

Weisbuch, C.

C. Weisbuch, M. Nishioka, A. Ishikawa, and Y. Arakawa, “Observation of the coupled exciton-photon mode splitting in a semiconductor quantum microcavity,” Phys. Rev. Lett. 69(23), 3314–3317 (1992).
[Crossref] [PubMed]

Wertz, E.

D. Bajoni, P. Senellart, E. Wertz, I. Sagnes, A. Miard, A. Lemaître, and J. Bloch, “Polariton Laser Using Single Micropillar GaAs-GaAlAs Semiconductor Cavities,” Phys. Rev. Lett. 100(4), 047401 (2008).
[Crossref] [PubMed]

West, K.

R. Balili, V. Hartwell, D. Snoke, L. Pfeiffer, and K. West, “Bose-Einstein condensation of microcavity polaritons in a trap,” Science 316(5827), 1007–1010 (2007).
[Crossref] [PubMed]

Wu, Q.

Y. Zhu, D. J. Gauthier, S. E. Morin, Q. Wu, H. J. Carmichael, and T. W. Mossberg, “Vacuum Rabi splitting as a feature of linear-dispersion theory: Analysis and experimental observations,” Phys. Rev. Lett. 64(21), 2499–2502 (1990).
[Crossref] [PubMed]

Wu, Y.-C.

J.-R. Chen, T.-C. Lu, Y.-C. Wu, S.-C. Lin, W.-R. Liu, W.-F. Hsieh, C.-C. Kuo, and C.-C. Lee, “Large vacuum Rabi splitting in ZnO-based hybrid microcavities observed at room temperature,” Appl. Phys. Lett. 94(6), 061103 (2009).
[Crossref]

Xie, J.

R. Shimada, J. Xie, V. Avrutin, Ü. Özgür, and H. Morkoč, “Cavity polaritons in ZnO-based hybrid microcavities,” Appl. Phys. Lett. 92(1), 011127 (2008).
[Crossref]

Xie, W.

Yamamoto, Y.

H. Deng, H. Haug, and Y. Yamamoto, “Exciton-polariton Bose-Einstein condensation,” Rev. Mod. Phys. 82(2), 1489–1537 (2010).
[Crossref]

H. Deng, D. Press, S. Götzinger, G. S. Solomon, R. Hey, K. H. Ploog, and Y. Yamamoto, “Quantum degenerate exciton-polaritons in thermal equilibrium,” Phys. Rev. Lett. 97(14), 146402 (2006).
[Crossref] [PubMed]

H. Deng, G. Weihs, D. Snoke, J. Bloch, and Y. Yamamoto, “Polariton lasing vs. photon lasing in a semiconductor microcavity,” Proc. Natl. Acad. Sci. U.S.A. 100(26), 15318–15323 (2003).
[Crossref] [PubMed]

H. Deng, G. Weihs, C. Santori, J. Bloch, and Y. Yamamoto, “Condensation of semiconductor microcavity exciton polaritons,” Science 298(5591), 199–202 (2002).
[Crossref] [PubMed]

A. Imamog¯lu, R. J. Ram, S. Pau, and Y. Yamamoto, “Nonequilibrium condensates and lasers without inversion: Exciton-polariton lasers,” Phys. Rev. A 53(6), 4250–4253 (1996).
[Crossref] [PubMed]

Zamfirescu, M.

M. Zamfirescu, A. Kavokin, B. Gil, G. Malpuech, and M. Kaliteevski, “ZnO as a material mostly adapted for the realization of room-temperature polariton lasers,” Phys. Rev. B 65(16), 161205 (2002).
[Crossref]

Zhang, L.

A. Das, J. Heo, M. Jankowski, W. Guo, L. Zhang, H. Deng, and P. Bhattacharya, “Room temperature ultralow threshold GaN nanowire polariton laser,” Phys. Rev. Lett. 107(6), 066405 (2011).
[Crossref] [PubMed]

Zhang, X.

L. Wang, X. Zhang, S. Zhao, G. Zhou, Y. Zhou, and J. Qi, “Synthesis of well-aligned ZnO nanowires by simple physical vapor deposition on c-oriented ZnO thin films without catalysts or additives,” Appl. Phys. Lett. 86(2), 024108 (2005).
[Crossref]

Zhao, S.

L. Wang, X. Zhang, S. Zhao, G. Zhou, Y. Zhou, and J. Qi, “Synthesis of well-aligned ZnO nanowires by simple physical vapor deposition on c-oriented ZnO thin films without catalysts or additives,” Appl. Phys. Lett. 86(2), 024108 (2005).
[Crossref]

Zhou, G.

L. Wang, X. Zhang, S. Zhao, G. Zhou, Y. Zhou, and J. Qi, “Synthesis of well-aligned ZnO nanowires by simple physical vapor deposition on c-oriented ZnO thin films without catalysts or additives,” Appl. Phys. Lett. 86(2), 024108 (2005).
[Crossref]

Zhou, H.

C. Klingshirn, J. Fallert, H. Zhou, J. Sartor, C. Thiele, F. Maier-Flaig, D. Schneider, and H. Kalt, “65 years of ZnO research – old and very recent results,” Phys. Status Solidi, B Basic Res. 247(6), 1424–1447 (2010).
[Crossref]

Zhou, Y.

L. Wang, X. Zhang, S. Zhao, G. Zhou, Y. Zhou, and J. Qi, “Synthesis of well-aligned ZnO nanowires by simple physical vapor deposition on c-oriented ZnO thin films without catalysts or additives,” Appl. Phys. Lett. 86(2), 024108 (2005).
[Crossref]

Zhu, Y.

Y. Zhu, D. J. Gauthier, S. E. Morin, Q. Wu, H. J. Carmichael, and T. W. Mossberg, “Vacuum Rabi splitting as a feature of linear-dispersion theory: Analysis and experimental observations,” Phys. Rev. Lett. 64(21), 2499–2502 (1990).
[Crossref] [PubMed]

Zúñiga-Pérez, J.

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011).
[Crossref]

Appl. Phys. B (1)

R. Schmidt-Grund, B. Rheinländer, C. Czekalla, G. Benndorf, H. Hochmuth, M. Lorenz, and M. Grundmann, “Exciton–polariton formation at room temperature in a planar ZnO resonator structure,” Appl. Phys. B 93(2-3), 331–337 (2008).
[Crossref]

Appl. Phys. Lett. (6)

R. Shimada, J. Xie, V. Avrutin, Ü. Özgür, and H. Morkoč, “Cavity polaritons in ZnO-based hybrid microcavities,” Appl. Phys. Lett. 92(1), 011127 (2008).
[Crossref]

J.-R. Chen, T.-C. Lu, Y.-C. Wu, S.-C. Lin, W.-R. Liu, W.-F. Hsieh, C.-C. Kuo, and C.-C. Lee, “Large vacuum Rabi splitting in ZnO-based hybrid microcavities observed at room temperature,” Appl. Phys. Lett. 94(6), 061103 (2009).
[Crossref]

G. Christmann, R. Butté, E. Feltin, J. Carlin, and N. Grandjean, “Room temperature polariton lasing in a GaN/AlGaNmultiple quantum well microcavity,” Appl. Phys. Lett. 93(5), 051102 (2008).
[Crossref]

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule, “Polariton lasing in a hybrid bulk ZnO microcavity,” Appl. Phys. Lett. 99(16), 161104 (2011).
[Crossref]

L. Wang, X. Zhang, S. Zhao, G. Zhou, Y. Zhou, and J. Qi, “Synthesis of well-aligned ZnO nanowires by simple physical vapor deposition on c-oriented ZnO thin films without catalysts or additives,” Appl. Phys. Lett. 86(2), 024108 (2005).
[Crossref]

R. Johne, D. D. Solnyshkov, and G. Malpuech, “Theory of exciton-polariton lasing at room temperature in ZnO microcavities,” Appl. Phys. Lett. 93(21), 211105 (2008).
[Crossref]

Nanoscale (1)

D. Vanmaekelbergh and L. K. van Vugt, “ZnO nanowire lasers,” Nanoscale 3(7), 2783–2800 (2011).
[Crossref] [PubMed]

Nanoscale Res. Lett. (1)

G. Jacopin, L. Rigutti, A. L. Bugallo, F. H. Julien, C. Baratto, E. Comini, M. Ferroni, and M. Tchernycheva, “High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires,” Nanoscale Res. Lett. 6(1), 501 (2011).
[Crossref] [PubMed]

Nature (2)

J. P. Reithmaier, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, and A. Forchel, “Strong coupling in a single quantum dot-semiconductor microcavity system,” Nature 432(7014), 197–200 (2004).
[Crossref] [PubMed]

J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and S. Dang, “Bose-Einstein condensation of exciton polaritons,” Nature 443(7110), 409–414 (2006).
[Crossref] [PubMed]

Opt. Express (1)

Phys. Rev. A (1)

A. Imamog¯lu, R. J. Ram, S. Pau, and Y. Yamamoto, “Nonequilibrium condensates and lasers without inversion: Exciton-polariton lasers,” Phys. Rev. A 53(6), 4250–4253 (1996).
[Crossref] [PubMed]

Phys. Rev. B (5)

Y. Chen, A. Tredicucci, and F. Bassani, “Bulk exciton polaritons in GaAs microcavities,” Phys. Rev. B 52(3), 1800–1805 (1995).
[Crossref]

M. Zamfirescu, A. Kavokin, B. Gil, G. Malpuech, and M. Kaliteevski, “ZnO as a material mostly adapted for the realization of room-temperature polariton lasers,” Phys. Rev. B 65(16), 161205 (2002).
[Crossref]

G. Christmann, R. Butté, E. Feltin, A. Mouti, P. Stadelmann, A. Castiglia, J.-F. Carlin, and N. Grandjean, “Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime,” Phys. Rev. B 77(8), 085310 (2008).
[Crossref]

S. Faure, T. Guillet, P. Lefebvre, T. Bretagnon, and B. Gil, “Comparison of strong coupling regimes in bulk GaAs, GaN, and ZnO semiconductor microcavities,” Phys. Rev. B 78(23), 235323 (2008).
[Crossref]

J. Levrat, R. Butté, E. Feltin, J.-F. Carlin, N. Grandjean, D. Solnyshkov, and G. Malpuech, “Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory,” Phys. Rev. B 81(12), 125305 (2010).
[Crossref]

Phys. Rev. Lett. (9)

H. Deng, D. Press, S. Götzinger, G. S. Solomon, R. Hey, K. H. Ploog, and Y. Yamamoto, “Quantum degenerate exciton-polaritons in thermal equilibrium,” Phys. Rev. Lett. 97(14), 146402 (2006).
[Crossref] [PubMed]

J. Kasprzak, D. D. Solnyshkov, R. André, S. Dang, and G. Malpuech, “Formation of an exciton polariton condensate: thermodynamic versus kinetic Regimes,” Phys. Rev. Lett. 101(14), 146404 (2008).
[Crossref] [PubMed]

C. Weisbuch, M. Nishioka, A. Ishikawa, and Y. Arakawa, “Observation of the coupled exciton-photon mode splitting in a semiconductor quantum microcavity,” Phys. Rev. Lett. 69(23), 3314–3317 (1992).
[Crossref] [PubMed]

M. G. Raizen, R. J. Thompson, R. J. Brecha, H. J. Kimble, and H. J. Carmichael, “Normal-mode splitting and linewidth averaging for two-state atoms in an optical cavity,” Phys. Rev. Lett. 63(3), 240–243 (1989).
[Crossref] [PubMed]

Y. Zhu, D. J. Gauthier, S. E. Morin, Q. Wu, H. J. Carmichael, and T. W. Mossberg, “Vacuum Rabi splitting as a feature of linear-dispersion theory: Analysis and experimental observations,” Phys. Rev. Lett. 64(21), 2499–2502 (1990).
[Crossref] [PubMed]

S. Christopoulos, G. B. von Högersthal, A. J. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

A. Das, J. Heo, M. Jankowski, W. Guo, L. Zhang, H. Deng, and P. Bhattacharya, “Room temperature ultralow threshold GaN nanowire polariton laser,” Phys. Rev. Lett. 107(6), 066405 (2011).
[Crossref] [PubMed]

D. Bajoni, P. Senellart, E. Wertz, I. Sagnes, A. Miard, A. Lemaître, and J. Bloch, “Polariton Laser Using Single Micropillar GaAs-GaAlAs Semiconductor Cavities,” Phys. Rev. Lett. 100(4), 047401 (2008).
[Crossref] [PubMed]

L. K. van Vugt, S. Rühle, P. Ravindran, H. C. Gerritsen, L. Kuipers, and D. Vanmaekelbergh, “Exciton polaritons confined in a ZnO nanowire cavity,” Phys. Rev. Lett. 97(14), 147401 (2006).
[Crossref] [PubMed]

Phys. Status Solidi, B Basic Res. (1)

C. Klingshirn, J. Fallert, H. Zhou, J. Sartor, C. Thiele, F. Maier-Flaig, D. Schneider, and H. Kalt, “65 years of ZnO research – old and very recent results,” Phys. Status Solidi, B Basic Res. 247(6), 1424–1447 (2010).
[Crossref]

Proc. Natl. Acad. Sci. U.S.A. (1)

H. Deng, G. Weihs, D. Snoke, J. Bloch, and Y. Yamamoto, “Polariton lasing vs. photon lasing in a semiconductor microcavity,” Proc. Natl. Acad. Sci. U.S.A. 100(26), 15318–15323 (2003).
[Crossref] [PubMed]

Rev. Mod. Phys. (2)

G. Khitrova, H. M. Gibbs, F. Jahnke, M. Kira, and S. W. Koch, “Nonlinear optics of normal-mode-coupling semiconductor microcavities,” Rev. Mod. Phys. 71(5), 1591–1639 (1999).
[Crossref]

H. Deng, H. Haug, and Y. Yamamoto, “Exciton-polariton Bose-Einstein condensation,” Rev. Mod. Phys. 82(2), 1489–1537 (2010).
[Crossref]

Science (2)

R. Balili, V. Hartwell, D. Snoke, L. Pfeiffer, and K. West, “Bose-Einstein condensation of microcavity polaritons in a trap,” Science 316(5827), 1007–1010 (2007).
[Crossref] [PubMed]

H. Deng, G. Weihs, C. Santori, J. Bloch, and Y. Yamamoto, “Condensation of semiconductor microcavity exciton polaritons,” Science 298(5591), 199–202 (2002).
[Crossref] [PubMed]

Cited By

Optica participates in Crossref's Cited-By Linking service. Citing articles from Optica Publishing Group journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (6)

Fig. 1
Fig. 1 (a) Scanning electron microscope (SEM) image of ZnO nanowires grown on n-type Si substrate. The wires have an average diameter of ~200-300 nm and a height of ~1.5 - 2.0 μm. The aerial density is ~1x109 cm−2; (b) high resolution transmission electron microscope (HRTEM) image of a ZnO nanowire with the selective area diffraction (SAD) pattern in the inset. The image shows that the nanowire is free of extended defects or stacking faults. The SAD pattern confirms that the nanowires have the wurtzite crystalline structure and grow along the c-axis.
Fig. 2
Fig. 2 (a) schematic of the nanowire-microcavity device with the SEM image of a single nanowire placed on the partial cavity; (b) The calculated electric field intensity distribution of the fundamental x-polarized resonance mode around the nanowire of length 1 μm and diameter 300 nm, embedded in a dielectric cavity. The figure shows the cross-sectional profile of the electrical field intensity in the x-z plane. The boundary of the nanowire in the x-z plane is indicated. Also shown alongside is the refractive index profile of the structure.
Fig. 3
Fig. 3 (a) Low temperature photoluminescence spectrum from nanowire ensemble measured perpendicular to the c-axis of the nanowire showing peaks corresponding to free (XA,XB) and donor bound excitons and their phonon replica; (b)temperature dependence of the exciton resonance and its phonon replica; (c) photoluminescence and transmission characteristics measured from an ensemble of ZnO nanowires.
Fig. 4
Fig. 4 (a) Photoluminescence spectra from the ZnO nanowire-microcavity structure for different values of temperature at zero emission angle. Relative tuning of the exciton resonance X through the cavity mode C is achieved by exploiting different energy shifts of the two modes with temperature; (b) extracted peak energies of polariton emission, shown in a, as a function of temperature. The solid lines are obtained from a solution to the coupled harmonic oscillator model; (c) color contour plot of the angle-resolved dispersion characteristics. The dashed lines representing LP and UP energies are obtained from solving the coupled harmonic oscillator model.
Fig. 5
Fig. 5 (a) Integrated photoluminescence intensity measured normal to the device as a function of excitation. The non-linear threshold is at an incident excitation density Eexc = 1.63 μJ/cm2 which corresponds to a LP density of 1.1x1017 cm−2. Inset: PL spectra measured below, at, and above threshold. The spectra reveal progressive linewidth narrowing along with the non-linear increase in the peak intensity; (b) variation of the emission linewidth and peak energy corresponding to a.
Fig. 6
Fig. 6 (a) Occupancy of LPB as a function of pump power obtained from angle-resolved photoluminescence measured below, at, and above threshold. The solid lines are theoretical fits based on MB or BE distributions (see text); (b) Time resolved photoluminescence measured normal to the sample (from k|| = 0) below, at, and above threshold with a streak camera having an overall resolution of 5 ps.

Metrics

Select as filters


Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved