Abstract

In this study, we report our finding of laser-induced resistance effect in metal-oxide-semiconductor (MOS) structure of Cr/SiO2/Si. Under the irradiation of a laser beam, the effect shows a large linear resistance change ratio of 92% with a spatial sensitivity of 0.79 MΩ/mm. In particular, by the application of an external magnetic field perpendicular to the Cr film, the resistance change ratio is increased to 110%. This effect is attributed to the Lorentz force acting on the photo-generated carriers in the inversion layer of MOS structures. The work suggests an approach for the development of new type magnetically modulated photoelectric devices.

© 2015 Optical Society of America

1. Introduction

The issue of how to manipulate electrical resistance is quite old, fundamental and always attractive due to its huge potential for applications. The existing methods of manipulating resistance mainly include controlling resistance by changing temperature and application of external field. For example, superconductivity below critical temperature [1–3] and magnetoresistance (MR) controlled by external magnetic field [4–7], both are very successful in many research and application areas. We recently discovered a laser-induced resistance effect based on metal-oxide-semiconductor (MOS) structures with some significant features including excellent spatial sensitivity and large resistance change ratio [8] and a bias-induced offset effect overlapped on this effect [9], which refers to electrical controlling of the laser-induce resistance effect. We also find some other photoelectric effect in similar MOS-type structures, e.g. lateral photovoltaic effect (LPE), infrared laser induced and bias-assisted improved LPE [10–14]. However, to our knowledge, seldom research of magnetic modulation on laser-induced resistance was made.

In this paper, we report a laser-induced resistance effect in Cr/SiO2/Si structures with a large resistance change ratio of 92% and high spatial sensitivity of 0.79 MΩ/mm. Moreover, we find the effect could be modulated by magnetic field applied perpendicular to the film (the modulation is negligibly small as the magnetic field applied parallel to the film). This result is quite similar to our previous studies on modulation of lateral photovoltage (LPV) by magnetic field in MOS-type structures [15], in which the relative variation of LPV can reach up to 93.2% with 2T of external magnetic field applied was found. We think both modulation of resistance and LPV can be ascribed to the Lorentz force acting on the photo-generated carriers gathering in the inversion layer of the structure. This work provides an approach for the development of new type photoelectric devices which are sensitive to magnetic field, such as magnetically sensitive photoelectric sensors, magnetic switches, magnetically modulated transistors, diodes, even storage devices.

2. Experimental results and discussion

The experiment is performed in Cr/SiO2/Si structures. The Cr films of varying thickness are fabricated on n-type single crystal Si (111) substrates by DC magnetron sputtering at room temperature. The thickness of the wafers is ~0.3 mm and the resistivity of the wafers is in the range of 50-80 Ω·cm at room temperature. The Si substrates are covered with thin native SiO2 layers of 1.2 nm measured by transmission electron microscopy (TEM), which are semitransparent to electrons at room temperature [16]. The base pressure of the vacuum system prior to deposition is lower than 1.0 × 10−4 Pa, and an argon gas pressure of 0.80 Pa is maintained during deposition. The deposition rate of chromium metal is determined by a stylus profile meter on thick calibration samples which is controlled in the range of 0.1 nm/s-0.2 nm/s in this experiment. All the contacts to the films are formed by alloying indium which is less than 1 mm in diameter showing no measurable rectifying behavior. The samples are scanned by laser (635 nm and 5 mW) focused into roughly 50-μm-diameter spot at the metal surface without any spurious illumination reaching the sample.

Initially we discuss the results for the structure with Cr films of 4.5 nm, which exhibits the strongest laser-induced resistance effect. In this structure, the original resistance on the Cr film between two point (A and B in Fig. 1(a)) 1 mm apart is 0.37 MΩ (R0). When the laser (5mW, 635nm) illuminates on point A (with a positive bias of A+, B-), the resistance remarkably increases to 0.66 MΩ (Rmax), while the laser point turns to point B, the resistance is reduced to 0.03 MΩ (Rmin). And with laser position changing in the area between A and B, the resistance changes almost linearly with the laser position as shown in Fig. 1(b).

 figure: Fig. 1

Fig. 1 (a) Measurement diagram of laser-induced resistance. (b) Laser-induced resistance on metal side as a function of laser (635 nm and 5 mW) position in Cr(4.5 nm)/SiO2(1.2 nm)/Si structure with AB = 1mm. The lines are linear fitting.

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Define the resistance change ratio (Δ) as

ΔRR0R0×100%

Then the change ratio in this case varies from −78% ~92%. While the applied bias reverses from positive to negative (A-, B+), the resistance changes conversely as shown in Fig. 1(b). Furthermore, the spatial sensitivity can reach up to 0.79 MΩ/mm, which shows that even a very small laser position displacement can change the resistance significantly.

To gain additional insight into the laser-induced resistance effect, we also investigated the AB distance-dependence. As shown in Fig. 2(a), a shorter distance leads to not only a larger change ratio but also a higher sensitivity. When the AB distance is reduced to 1 mm, the change ratio can reach up to 92% with a spatial sensitivity of 0.79 MΩ/mm. In contrast, when the distance is increased to 7 mm, the change ratio drops to 17.5% and the spatial sensitivity drops to 0.27 MΩ/mm.

 figure: Fig. 2

Fig. 2 (a) The laser-induced resistance change ratio and spatial sensitivity with different AB distance and Cr thickness of 4.5 mm. The lines are linear fitting. (b) The laser-induced resistance change ratio and spatial sensitivity with different Cr thickness and AB = 1 mm. The lines are B-spline fitting.

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By varying the Cr film thickness, we find the effect has a great bearing on the film thickness, which is similar to our previously study [8, 17], there is an optimal value of thickness. As shown in Fig. 2(b), the largest resistance change ratio (92%) and highest spatial sensitivity (0.79 MΩ/mm) occurs at the optimal Cr film thickness of 4.5 nm.

To explore the modulation of this effect, we applied external magnetic field to the samples as shown in Fig. 3(a). When the magnetic field is parallel to the film, the modulation of laser-induced resistance effect is negligibly small. However, as magnetic field is applied perpendicular to the film, we find a significant modulation as shown in Fig. 3(b). The resistance changes obviously, the change ratio can reach up to 110% at 15000Oe.

 figure: Fig. 3

Fig. 3 (a) Measurement diagram of laser-induced resistance effect with external magnetic field applied. (b) The resistance change ratio with different Cr thickness. The lines are B-spline fitting. The inset shows peak value of resistance change ratio modulated by magnetic field.

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The laser-induced resistance can be explained by a photo-generated carriers diffusion and scattering model [8]. As shown in Fig. 4(a), when a laser illuminates the MOS structure of Cr/SiO2/Si, the electron–hole pairs are generated inside Si. These photo-generated electrons will thus have the possibility tunneling through the oxide layer into the Cr film by the Schottky field, and then diffuse along the metal surface. In the meanwhile, some of them will recombine with the holes during the diffusion. When a negative bias is added on AB, the photo-generated diffusion electrons move in an opposite direction against the field-driven drift electrons in the region between laser point and point A (high resistivity region) as shown in Fig. 4(a), resulting in a large possibility of scattering between them, thus the resistance is increased. However, in the region between laser point and point B (low resistivity region), the diffusion electrons move in the same direction with the drift electrons, thus the resistance is decreased. In fact, the total resistance between A and B consists of these two parts. As the laser moves along the line between A and B, the both length of high resistivity region and low resistivity region changes accordingly. This results in the linearly change in whole resistance, as shown in Fig. 1(b).

 figure: Fig. 4

Fig. 4 (a) Schematic diffusion model in the Cr/SiO2/Si structure. (b) Schematic simple equilibrium energy-band diagram of the Cr/SiO2/Si structure. Egi and Egs denote the bandgaps of SiO2 and Si, respectively. Φmi is the metal-to-insulator barrier height and is related to the work function of Cr. Φsi is the semiconductor-to-insulator barrier height and is related to the work function of Si.

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As the measurement bias is reversed, the drift electrons immediately reverse their movement direction. This will cause a symmetrical exchange of the high and low resistivity regions, resulting in a symmetry feature of the effect.

It should be noted that this effect is strongly influenced by both AB distance and electron diffusion length l which is related to metal film thickness [8]. Our experimental results show that resistance change ratio and sensitivity decrease as AB distance increases (Fig. 2(a)), and there is an optimal value of Cr film thickness (Fig. 2(b)), both properties are consistent with our previous study [8, 9, 17].

As we have known, in MOS structures, the effective resistivity measured on the metal film is strongly determined by two parallel channels: the metal film channel and the Si inversion layer channel (shown in Fig. 4) [18–23]. When the Cr film is very thin, its resistance will be very high, thus the inversion layer plays a major role in whole effective resistivity. The high mobility carriers in the inversion layer can be strongly affected by an external magnetic field applied perpendicular to the film due to the Lorentz force [24] (a magnetic field perpendicular to the direction of movement of carriers as shown in Fig. 3(a) and Fig. 4(a) will generate a Lorentz force). As the magnetic field increases, the Lorentz force increases, the high mobility carriers will move spirally and increase the possibility of scattering with each other, thus the resistance is increased as shown in Fig. 3(b). However, as Cr film grows thicker, its resistance will become low. In this case, the metal film channel will play a major role in the whole effective resistivity, which always leads to a smaller effective resistance and a more pronounced shorting effect. The possibility of scattering between diffusing electrons and drifting electrons is so large that the effect of Lorentz force acting on electrons in Cr film is negligibly small. Therefore, as Cr film is thick, the magnetic modulation will become very small (see Fig. 3(b)).

3. Conclusions

In conclusion, we have discovered a laser-induced resistance effect in Cr/SiO2/Si structure with a high sensitivity of 0.79 MΩ/mm as the laser moves along the Cr surface, and a large resistance change ratio of 92%. We also found this effect can be modulated by a magnetic field. We attribute this phenomenon to the Lorentz force acting on the photo-generated carriers gathering in the inversion layer. This work provide a novel approach for the control of resistance by external field in a metal-oxide-semiconductor (MOS) structures, and may be useful for the development of new type photoelectric devices, such as magnetically sensitive photoelectric sensors, magnetic switches, and magnetically modulated transistors, diodes, etc.

Acknowledgments

We acknowledge the financial support of the National Natural Science Foundation of China under Grants 11374214, 61574090, 10974135, 61178083 and 51235008.

References and links

1. V. V. Struzhkin, M. I. Eremets, W. Gan, H. K. Mao, and R. J. Hemley, “Superconductivity in dense lithium,” Science 298(5596), 1213–1215 (2002). [CrossRef]   [PubMed]  

2. B. J. Taylor and M. B. Maple, “Formula for the Critical Temperature of Superconductors Based on the Electronic Density of States and the Effective Mass,” Phys. Rev. Lett. 102(13), 137003 (2009). [CrossRef]   [PubMed]  

3. A. de Visser, N. T. Huy, A. Gasparini, D. E. de Nijs, D. Andreica, C. Baines, and A. Amato, “Muon Spin Rotation and Relaxation in the Superconducting Ferromagnet UCoGe,” Phys. Rev. Lett. 102(16), 167003 (2009). [CrossRef]   [PubMed]  

4. C. Rao and A. Cheetham, “Giant magnetoresistance in transition metal oxides,” Science 272(5260), 369–370 (1996). [CrossRef]  

5. R. Xu, A. Husmann, T. Rosenbaum, M.-L. Saboungi, J. Enderby, and P. Littlewood, “Large magnetoresistance in non-magnetic silver chalcogenides,” Nature 390(6655), 57–60 (1997). [CrossRef]  

6. F. Muñoz-Rojas, J. Fernández-Rossier, and J. J. Palacios, “Giant magnetoresistance in ultrasmall graphene based devices,” Phys. Rev. Lett. 102(13), 136810 (2009). [CrossRef]   [PubMed]  

7. M. H. Tang, Z. Z. Zhang, Y. Y. Zhu, B. Ma, and Q. Y. Jin, “Role of TbFe on Perpendicular Magnetic Anisotropy and Giant Magnetoresistance Effect in [Co/Ni]N-Based Spin Valve,” Nano-Micro Lett. 6(4), 359–364 (2014). [CrossRef]  

8. C. Yu and H. Wang, “Light-induced bipolar-resistance effect based on metal-oxide-semiconductor structures of Ti/SiO2/Si,” Adv. Mater. 22(9), 966–970 (2010). [CrossRef]   [PubMed]  

9. C. Q. Yu and H. Wang, “Bias-induced offset effect overlapped on bipolar-resistance effect based on Co/SiO2/Si structure,” Appl. Phys. Lett. 97(4), 041105 (2010). [CrossRef]  

10. S. Liu, X. Xie, and H. Wang, “Lateral photovoltaic effect and electron transport observed in Cr nano-film,” Opt. Express 22(10), 11627–11632 (2014). [CrossRef]   [PubMed]  

11. S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, “The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures,” Opt. Express 16(6), 3798–3806 (2008). [CrossRef]   [PubMed]  

12. C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009). [CrossRef]   [PubMed]  

13. B. Zhang, L. Du, and H. Wang, “Bias-assisted improved lateral photovoltaic effect observed in Cu2O nano-films,” Opt. Express 22(2), 1661–1666 (2014). [CrossRef]   [PubMed]  

14. L. Du and H. Wang, “Infrared laser induced lateral photovoltaic effect observed in Cu 2 O nanoscale film,” Opt. Express 18(9), 9113–9118 (2010). [CrossRef]   [PubMed]  

15. H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal–oxide–semiconductor structure,” New J. Phys. 10(9), 093006 (2008). [CrossRef]  

16. R. S. Markiewicz and L. A. Harris, “Two-Dimensional Resistivity of Ultrathin Metal Films,” Phys. Rev. Lett. 46(17), 1149–1153 (1981). [CrossRef]  

17. S. Liu, P. Cheng, and H. Wang, “Bipolar resistance effect observed in CdSe quantum-dots dominated structure of Zn/CdSe/Si,” Opt. Lett. 37(11), 1814–1816 (2012). [CrossRef]   [PubMed]  

18. P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando, and M. A. Kastner, “Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas,” Phys. Rev. B Condens. Matter 45(16), 9214–9221 (1992). [CrossRef]   [PubMed]  

19. N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, “Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/ semiconductor devices,” Appl. Phys. Lett. 72(14), 1724–1726 (1998). [CrossRef]  

20. J. Dai, L. Spinu, K. Y. Wang, L. Malkinski, and J. Tang, “Channel switching and magnetoresistance of a metal-SiO2-Si structure,” J. Phys. D Appl. Phys. 33(11), L65–L67 (2000). [CrossRef]  

21. J. Tang, J. Dai, K. Wang, W. Zhou, N. Ruzycki, and U. Diebold, “Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate,” J. Appl. Phys. 91(10), 8411–8413 (2002). [CrossRef]  

22. H. B. de Carvalho, M. J. S. P. Brasil, J. C. Denardin, and M. Knobel, “Transport and Magnetotransport transition of thin Co films grown on Si,” Phys. Status Solidi A 201(10), 2361–2365 (2004). [CrossRef]  

23. H. B. de Carvalho, M. J. S. P. Brasil, M. Knobel, and J. C. Denardin, “Magnetotransport and electric properties of Co–SiO2–Si structure,” J. Magn. Magn. Mater. 272, 1157–1159 (2004). [CrossRef]  

24. V. N. Dobrovolsky and A. N. Krolevets, “Theory of magnetic-field-sensitive metal–oxide–semiconductor field-effect transistors,” J. Appl. Phys. 85(3), 1956 (1999). [CrossRef]  

References

  • View by:

  1. V. V. Struzhkin, M. I. Eremets, W. Gan, H. K. Mao, and R. J. Hemley, “Superconductivity in dense lithium,” Science 298(5596), 1213–1215 (2002).
    [Crossref] [PubMed]
  2. B. J. Taylor and M. B. Maple, “Formula for the Critical Temperature of Superconductors Based on the Electronic Density of States and the Effective Mass,” Phys. Rev. Lett. 102(13), 137003 (2009).
    [Crossref] [PubMed]
  3. A. de Visser, N. T. Huy, A. Gasparini, D. E. de Nijs, D. Andreica, C. Baines, and A. Amato, “Muon Spin Rotation and Relaxation in the Superconducting Ferromagnet UCoGe,” Phys. Rev. Lett. 102(16), 167003 (2009).
    [Crossref] [PubMed]
  4. C. Rao and A. Cheetham, “Giant magnetoresistance in transition metal oxides,” Science 272(5260), 369–370 (1996).
    [Crossref]
  5. R. Xu, A. Husmann, T. Rosenbaum, M.-L. Saboungi, J. Enderby, and P. Littlewood, “Large magnetoresistance in non-magnetic silver chalcogenides,” Nature 390(6655), 57–60 (1997).
    [Crossref]
  6. F. Muñoz-Rojas, J. Fernández-Rossier, and J. J. Palacios, “Giant magnetoresistance in ultrasmall graphene based devices,” Phys. Rev. Lett. 102(13), 136810 (2009).
    [Crossref] [PubMed]
  7. M. H. Tang, Z. Z. Zhang, Y. Y. Zhu, B. Ma, and Q. Y. Jin, “Role of TbFe on Perpendicular Magnetic Anisotropy and Giant Magnetoresistance Effect in [Co/Ni]N-Based Spin Valve,” Nano-Micro Lett. 6(4), 359–364 (2014).
    [Crossref]
  8. C. Yu and H. Wang, “Light-induced bipolar-resistance effect based on metal-oxide-semiconductor structures of Ti/SiO2/Si,” Adv. Mater. 22(9), 966–970 (2010).
    [Crossref] [PubMed]
  9. C. Q. Yu and H. Wang, “Bias-induced offset effect overlapped on bipolar-resistance effect based on Co/SiO2/Si structure,” Appl. Phys. Lett. 97(4), 041105 (2010).
    [Crossref]
  10. S. Liu, X. Xie, and H. Wang, “Lateral photovoltaic effect and electron transport observed in Cr nano-film,” Opt. Express 22(10), 11627–11632 (2014).
    [Crossref] [PubMed]
  11. S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, “The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures,” Opt. Express 16(6), 3798–3806 (2008).
    [Crossref] [PubMed]
  12. C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
    [Crossref] [PubMed]
  13. B. Zhang, L. Du, and H. Wang, “Bias-assisted improved lateral photovoltaic effect observed in Cu2O nano-films,” Opt. Express 22(2), 1661–1666 (2014).
    [Crossref] [PubMed]
  14. L. Du and H. Wang, “Infrared laser induced lateral photovoltaic effect observed in Cu 2 O nanoscale film,” Opt. Express 18(9), 9113–9118 (2010).
    [Crossref] [PubMed]
  15. H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal–oxide–semiconductor structure,” New J. Phys. 10(9), 093006 (2008).
    [Crossref]
  16. R. S. Markiewicz and L. A. Harris, “Two-Dimensional Resistivity of Ultrathin Metal Films,” Phys. Rev. Lett. 46(17), 1149–1153 (1981).
    [Crossref]
  17. S. Liu, P. Cheng, and H. Wang, “Bipolar resistance effect observed in CdSe quantum-dots dominated structure of Zn/CdSe/Si,” Opt. Lett. 37(11), 1814–1816 (2012).
    [Crossref] [PubMed]
  18. P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando, and M. A. Kastner, “Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas,” Phys. Rev. B Condens. Matter 45(16), 9214–9221 (1992).
    [Crossref] [PubMed]
  19. N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, “Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/ semiconductor devices,” Appl. Phys. Lett. 72(14), 1724–1726 (1998).
    [Crossref]
  20. J. Dai, L. Spinu, K. Y. Wang, L. Malkinski, and J. Tang, “Channel switching and magnetoresistance of a metal-SiO2-Si structure,” J. Phys. D Appl. Phys. 33(11), L65–L67 (2000).
    [Crossref]
  21. J. Tang, J. Dai, K. Wang, W. Zhou, N. Ruzycki, and U. Diebold, “Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate,” J. Appl. Phys. 91(10), 8411–8413 (2002).
    [Crossref]
  22. H. B. de Carvalho, M. J. S. P. Brasil, J. C. Denardin, and M. Knobel, “Transport and Magnetotransport transition of thin Co films grown on Si,” Phys. Status Solidi A 201(10), 2361–2365 (2004).
    [Crossref]
  23. H. B. de Carvalho, M. J. S. P. Brasil, M. Knobel, and J. C. Denardin, “Magnetotransport and electric properties of Co–SiO2–Si structure,” J. Magn. Magn. Mater. 272, 1157–1159 (2004).
    [Crossref]
  24. V. N. Dobrovolsky and A. N. Krolevets, “Theory of magnetic-field-sensitive metal–oxide–semiconductor field-effect transistors,” J. Appl. Phys. 85(3), 1956 (1999).
    [Crossref]

2014 (3)

2012 (1)

2010 (3)

L. Du and H. Wang, “Infrared laser induced lateral photovoltaic effect observed in Cu 2 O nanoscale film,” Opt. Express 18(9), 9113–9118 (2010).
[Crossref] [PubMed]

C. Yu and H. Wang, “Light-induced bipolar-resistance effect based on metal-oxide-semiconductor structures of Ti/SiO2/Si,” Adv. Mater. 22(9), 966–970 (2010).
[Crossref] [PubMed]

C. Q. Yu and H. Wang, “Bias-induced offset effect overlapped on bipolar-resistance effect based on Co/SiO2/Si structure,” Appl. Phys. Lett. 97(4), 041105 (2010).
[Crossref]

2009 (4)

B. J. Taylor and M. B. Maple, “Formula for the Critical Temperature of Superconductors Based on the Electronic Density of States and the Effective Mass,” Phys. Rev. Lett. 102(13), 137003 (2009).
[Crossref] [PubMed]

A. de Visser, N. T. Huy, A. Gasparini, D. E. de Nijs, D. Andreica, C. Baines, and A. Amato, “Muon Spin Rotation and Relaxation in the Superconducting Ferromagnet UCoGe,” Phys. Rev. Lett. 102(16), 167003 (2009).
[Crossref] [PubMed]

F. Muñoz-Rojas, J. Fernández-Rossier, and J. J. Palacios, “Giant magnetoresistance in ultrasmall graphene based devices,” Phys. Rev. Lett. 102(13), 136810 (2009).
[Crossref] [PubMed]

C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
[Crossref] [PubMed]

2008 (2)

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal–oxide–semiconductor structure,” New J. Phys. 10(9), 093006 (2008).
[Crossref]

S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, “The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures,” Opt. Express 16(6), 3798–3806 (2008).
[Crossref] [PubMed]

2004 (2)

H. B. de Carvalho, M. J. S. P. Brasil, J. C. Denardin, and M. Knobel, “Transport and Magnetotransport transition of thin Co films grown on Si,” Phys. Status Solidi A 201(10), 2361–2365 (2004).
[Crossref]

H. B. de Carvalho, M. J. S. P. Brasil, M. Knobel, and J. C. Denardin, “Magnetotransport and electric properties of Co–SiO2–Si structure,” J. Magn. Magn. Mater. 272, 1157–1159 (2004).
[Crossref]

2002 (2)

J. Tang, J. Dai, K. Wang, W. Zhou, N. Ruzycki, and U. Diebold, “Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate,” J. Appl. Phys. 91(10), 8411–8413 (2002).
[Crossref]

V. V. Struzhkin, M. I. Eremets, W. Gan, H. K. Mao, and R. J. Hemley, “Superconductivity in dense lithium,” Science 298(5596), 1213–1215 (2002).
[Crossref] [PubMed]

2000 (1)

J. Dai, L. Spinu, K. Y. Wang, L. Malkinski, and J. Tang, “Channel switching and magnetoresistance of a metal-SiO2-Si structure,” J. Phys. D Appl. Phys. 33(11), L65–L67 (2000).
[Crossref]

1999 (1)

V. N. Dobrovolsky and A. N. Krolevets, “Theory of magnetic-field-sensitive metal–oxide–semiconductor field-effect transistors,” J. Appl. Phys. 85(3), 1956 (1999).
[Crossref]

1998 (1)

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, “Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/ semiconductor devices,” Appl. Phys. Lett. 72(14), 1724–1726 (1998).
[Crossref]

1997 (1)

R. Xu, A. Husmann, T. Rosenbaum, M.-L. Saboungi, J. Enderby, and P. Littlewood, “Large magnetoresistance in non-magnetic silver chalcogenides,” Nature 390(6655), 57–60 (1997).
[Crossref]

1996 (1)

C. Rao and A. Cheetham, “Giant magnetoresistance in transition metal oxides,” Science 272(5260), 369–370 (1996).
[Crossref]

1992 (1)

P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando, and M. A. Kastner, “Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas,” Phys. Rev. B Condens. Matter 45(16), 9214–9221 (1992).
[Crossref] [PubMed]

1981 (1)

R. S. Markiewicz and L. A. Harris, “Two-Dimensional Resistivity of Ultrathin Metal Films,” Phys. Rev. Lett. 46(17), 1149–1153 (1981).
[Crossref]

Amato, A.

A. de Visser, N. T. Huy, A. Gasparini, D. E. de Nijs, D. Andreica, C. Baines, and A. Amato, “Muon Spin Rotation and Relaxation in the Superconducting Ferromagnet UCoGe,” Phys. Rev. Lett. 102(16), 167003 (2009).
[Crossref] [PubMed]

Andreica, D.

A. de Visser, N. T. Huy, A. Gasparini, D. E. de Nijs, D. Andreica, C. Baines, and A. Amato, “Muon Spin Rotation and Relaxation in the Superconducting Ferromagnet UCoGe,” Phys. Rev. Lett. 102(16), 167003 (2009).
[Crossref] [PubMed]

Antoniadis, D. A.

P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando, and M. A. Kastner, “Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas,” Phys. Rev. B Condens. Matter 45(16), 9214–9221 (1992).
[Crossref] [PubMed]

Bagwell, P. F.

P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando, and M. A. Kastner, “Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas,” Phys. Rev. B Condens. Matter 45(16), 9214–9221 (1992).
[Crossref] [PubMed]

Baines, C.

A. de Visser, N. T. Huy, A. Gasparini, D. E. de Nijs, D. Andreica, C. Baines, and A. Amato, “Muon Spin Rotation and Relaxation in the Superconducting Ferromagnet UCoGe,” Phys. Rev. Lett. 102(16), 167003 (2009).
[Crossref] [PubMed]

Beaumont, S. P.

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, “Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/ semiconductor devices,” Appl. Phys. Lett. 72(14), 1724–1726 (1998).
[Crossref]

Brasil, M. J. S. P.

H. B. de Carvalho, M. J. S. P. Brasil, J. C. Denardin, and M. Knobel, “Transport and Magnetotransport transition of thin Co films grown on Si,” Phys. Status Solidi A 201(10), 2361–2365 (2004).
[Crossref]

H. B. de Carvalho, M. J. S. P. Brasil, M. Knobel, and J. C. Denardin, “Magnetotransport and electric properties of Co–SiO2–Si structure,” J. Magn. Magn. Mater. 272, 1157–1159 (2004).
[Crossref]

Cheetham, A.

C. Rao and A. Cheetham, “Giant magnetoresistance in transition metal oxides,” Science 272(5260), 369–370 (1996).
[Crossref]

Cheng, P.

Dai, J.

J. Tang, J. Dai, K. Wang, W. Zhou, N. Ruzycki, and U. Diebold, “Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate,” J. Appl. Phys. 91(10), 8411–8413 (2002).
[Crossref]

J. Dai, L. Spinu, K. Y. Wang, L. Malkinski, and J. Tang, “Channel switching and magnetoresistance of a metal-SiO2-Si structure,” J. Phys. D Appl. Phys. 33(11), L65–L67 (2000).
[Crossref]

de Carvalho, H. B.

H. B. de Carvalho, M. J. S. P. Brasil, J. C. Denardin, and M. Knobel, “Transport and Magnetotransport transition of thin Co films grown on Si,” Phys. Status Solidi A 201(10), 2361–2365 (2004).
[Crossref]

H. B. de Carvalho, M. J. S. P. Brasil, M. Knobel, and J. C. Denardin, “Magnetotransport and electric properties of Co–SiO2–Si structure,” J. Magn. Magn. Mater. 272, 1157–1159 (2004).
[Crossref]

de Nijs, D. E.

A. de Visser, N. T. Huy, A. Gasparini, D. E. de Nijs, D. Andreica, C. Baines, and A. Amato, “Muon Spin Rotation and Relaxation in the Superconducting Ferromagnet UCoGe,” Phys. Rev. Lett. 102(16), 167003 (2009).
[Crossref] [PubMed]

de Visser, A.

A. de Visser, N. T. Huy, A. Gasparini, D. E. de Nijs, D. Andreica, C. Baines, and A. Amato, “Muon Spin Rotation and Relaxation in the Superconducting Ferromagnet UCoGe,” Phys. Rev. Lett. 102(16), 167003 (2009).
[Crossref] [PubMed]

Denardin, J. C.

H. B. de Carvalho, M. J. S. P. Brasil, J. C. Denardin, and M. Knobel, “Transport and Magnetotransport transition of thin Co films grown on Si,” Phys. Status Solidi A 201(10), 2361–2365 (2004).
[Crossref]

H. B. de Carvalho, M. J. S. P. Brasil, M. Knobel, and J. C. Denardin, “Magnetotransport and electric properties of Co–SiO2–Si structure,” J. Magn. Magn. Mater. 272, 1157–1159 (2004).
[Crossref]

Diebold, U.

J. Tang, J. Dai, K. Wang, W. Zhou, N. Ruzycki, and U. Diebold, “Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate,” J. Appl. Phys. 91(10), 8411–8413 (2002).
[Crossref]

Dobrovolsky, V. N.

V. N. Dobrovolsky and A. N. Krolevets, “Theory of magnetic-field-sensitive metal–oxide–semiconductor field-effect transistors,” J. Appl. Phys. 85(3), 1956 (1999).
[Crossref]

Du, L.

Enderby, J.

R. Xu, A. Husmann, T. Rosenbaum, M.-L. Saboungi, J. Enderby, and P. Littlewood, “Large magnetoresistance in non-magnetic silver chalcogenides,” Nature 390(6655), 57–60 (1997).
[Crossref]

Eremets, M. I.

V. V. Struzhkin, M. I. Eremets, W. Gan, H. K. Mao, and R. J. Hemley, “Superconductivity in dense lithium,” Science 298(5596), 1213–1215 (2002).
[Crossref] [PubMed]

Fernández-Rossier, J.

F. Muñoz-Rojas, J. Fernández-Rossier, and J. J. Palacios, “Giant magnetoresistance in ultrasmall graphene based devices,” Phys. Rev. Lett. 102(13), 136810 (2009).
[Crossref] [PubMed]

Gallagher, B. L.

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, “Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/ semiconductor devices,” Appl. Phys. Lett. 72(14), 1724–1726 (1998).
[Crossref]

Gan, W.

V. V. Struzhkin, M. I. Eremets, W. Gan, H. K. Mao, and R. J. Hemley, “Superconductivity in dense lithium,” Science 298(5596), 1213–1215 (2002).
[Crossref] [PubMed]

Gasparini, A.

A. de Visser, N. T. Huy, A. Gasparini, D. E. de Nijs, D. Andreica, C. Baines, and A. Amato, “Muon Spin Rotation and Relaxation in the Superconducting Ferromagnet UCoGe,” Phys. Rev. Lett. 102(16), 167003 (2009).
[Crossref] [PubMed]

Gu, Y. Z.

Harris, L. A.

R. S. Markiewicz and L. A. Harris, “Two-Dimensional Resistivity of Ultrathin Metal Films,” Phys. Rev. Lett. 46(17), 1149–1153 (1981).
[Crossref]

Hemley, R. J.

V. V. Struzhkin, M. I. Eremets, W. Gan, H. K. Mao, and R. J. Hemley, “Superconductivity in dense lithium,” Science 298(5596), 1213–1215 (2002).
[Crossref] [PubMed]

Henini, M.

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, “Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/ semiconductor devices,” Appl. Phys. Lett. 72(14), 1724–1726 (1998).
[Crossref]

Howson, M. A.

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, “Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/ semiconductor devices,” Appl. Phys. Lett. 72(14), 1724–1726 (1998).
[Crossref]

Husmann, A.

R. Xu, A. Husmann, T. Rosenbaum, M.-L. Saboungi, J. Enderby, and P. Littlewood, “Large magnetoresistance in non-magnetic silver chalcogenides,” Nature 390(6655), 57–60 (1997).
[Crossref]

Huy, N. T.

A. de Visser, N. T. Huy, A. Gasparini, D. E. de Nijs, D. Andreica, C. Baines, and A. Amato, “Muon Spin Rotation and Relaxation in the Superconducting Ferromagnet UCoGe,” Phys. Rev. Lett. 102(16), 167003 (2009).
[Crossref] [PubMed]

Jin, Q. Y.

M. H. Tang, Z. Z. Zhang, Y. Y. Zhu, B. Ma, and Q. Y. Jin, “Role of TbFe on Perpendicular Magnetic Anisotropy and Giant Magnetoresistance Effect in [Co/Ni]N-Based Spin Valve,” Nano-Micro Lett. 6(4), 359–364 (2014).
[Crossref]

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal–oxide–semiconductor structure,” New J. Phys. 10(9), 093006 (2008).
[Crossref]

Kastner, M. A.

P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando, and M. A. Kastner, “Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas,” Phys. Rev. B Condens. Matter 45(16), 9214–9221 (1992).
[Crossref] [PubMed]

Knobel, M.

H. B. de Carvalho, M. J. S. P. Brasil, J. C. Denardin, and M. Knobel, “Transport and Magnetotransport transition of thin Co films grown on Si,” Phys. Status Solidi A 201(10), 2361–2365 (2004).
[Crossref]

H. B. de Carvalho, M. J. S. P. Brasil, M. Knobel, and J. C. Denardin, “Magnetotransport and electric properties of Co–SiO2–Si structure,” J. Magn. Magn. Mater. 272, 1157–1159 (2004).
[Crossref]

Krolevets, A. N.

V. N. Dobrovolsky and A. N. Krolevets, “Theory of magnetic-field-sensitive metal–oxide–semiconductor field-effect transistors,” J. Appl. Phys. 85(3), 1956 (1999).
[Crossref]

Littlewood, P.

R. Xu, A. Husmann, T. Rosenbaum, M.-L. Saboungi, J. Enderby, and P. Littlewood, “Large magnetoresistance in non-magnetic silver chalcogenides,” Nature 390(6655), 57–60 (1997).
[Crossref]

Liu, S.

Ma, B.

M. H. Tang, Z. Z. Zhang, Y. Y. Zhu, B. Ma, and Q. Y. Jin, “Role of TbFe on Perpendicular Magnetic Anisotropy and Giant Magnetoresistance Effect in [Co/Ni]N-Based Spin Valve,” Nano-Micro Lett. 6(4), 359–364 (2014).
[Crossref]

Main, P. C.

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, “Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/ semiconductor devices,” Appl. Phys. Lett. 72(14), 1724–1726 (1998).
[Crossref]

Malkinski, L.

J. Dai, L. Spinu, K. Y. Wang, L. Malkinski, and J. Tang, “Channel switching and magnetoresistance of a metal-SiO2-Si structure,” J. Phys. D Appl. Phys. 33(11), L65–L67 (2000).
[Crossref]

Mao, H. K.

V. V. Struzhkin, M. I. Eremets, W. Gan, H. K. Mao, and R. J. Hemley, “Superconductivity in dense lithium,” Science 298(5596), 1213–1215 (2002).
[Crossref] [PubMed]

Maple, M. B.

B. J. Taylor and M. B. Maple, “Formula for the Critical Temperature of Superconductors Based on the Electronic Density of States and the Effective Mass,” Phys. Rev. Lett. 102(13), 137003 (2009).
[Crossref] [PubMed]

Markiewicz, R. S.

R. S. Markiewicz and L. A. Harris, “Two-Dimensional Resistivity of Ultrathin Metal Films,” Phys. Rev. Lett. 46(17), 1149–1153 (1981).
[Crossref]

Marrows, C. H.

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, “Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/ semiconductor devices,” Appl. Phys. Lett. 72(14), 1724–1726 (1998).
[Crossref]

Muñoz-Rojas, F.

F. Muñoz-Rojas, J. Fernández-Rossier, and J. J. Palacios, “Giant magnetoresistance in ultrasmall graphene based devices,” Phys. Rev. Lett. 102(13), 136810 (2009).
[Crossref] [PubMed]

Nogaret, A.

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, “Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/ semiconductor devices,” Appl. Phys. Lett. 72(14), 1724–1726 (1998).
[Crossref]

Orlando, T. P.

P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando, and M. A. Kastner, “Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas,” Phys. Rev. B Condens. Matter 45(16), 9214–9221 (1992).
[Crossref] [PubMed]

Overend, N.

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, “Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/ semiconductor devices,” Appl. Phys. Lett. 72(14), 1724–1726 (1998).
[Crossref]

Palacios, J. J.

F. Muñoz-Rojas, J. Fernández-Rossier, and J. J. Palacios, “Giant magnetoresistance in ultrasmall graphene based devices,” Phys. Rev. Lett. 102(13), 136810 (2009).
[Crossref] [PubMed]

Park, S. L.

P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando, and M. A. Kastner, “Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas,” Phys. Rev. B Condens. Matter 45(16), 9214–9221 (1992).
[Crossref] [PubMed]

Rao, C.

C. Rao and A. Cheetham, “Giant magnetoresistance in transition metal oxides,” Science 272(5260), 369–370 (1996).
[Crossref]

Rosenbaum, T.

R. Xu, A. Husmann, T. Rosenbaum, M.-L. Saboungi, J. Enderby, and P. Littlewood, “Large magnetoresistance in non-magnetic silver chalcogenides,” Nature 390(6655), 57–60 (1997).
[Crossref]

Ruzycki, N.

J. Tang, J. Dai, K. Wang, W. Zhou, N. Ruzycki, and U. Diebold, “Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate,” J. Appl. Phys. 91(10), 8411–8413 (2002).
[Crossref]

Saboungi, M.-L.

R. Xu, A. Husmann, T. Rosenbaum, M.-L. Saboungi, J. Enderby, and P. Littlewood, “Large magnetoresistance in non-magnetic silver chalcogenides,” Nature 390(6655), 57–60 (1997).
[Crossref]

Smith, H. I.

P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando, and M. A. Kastner, “Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas,” Phys. Rev. B Condens. Matter 45(16), 9214–9221 (1992).
[Crossref] [PubMed]

Spinu, L.

J. Dai, L. Spinu, K. Y. Wang, L. Malkinski, and J. Tang, “Channel switching and magnetoresistance of a metal-SiO2-Si structure,” J. Phys. D Appl. Phys. 33(11), L65–L67 (2000).
[Crossref]

Struzhkin, V. V.

V. V. Struzhkin, M. I. Eremets, W. Gan, H. K. Mao, and R. J. Hemley, “Superconductivity in dense lithium,” Science 298(5596), 1213–1215 (2002).
[Crossref] [PubMed]

Tang, J.

J. Tang, J. Dai, K. Wang, W. Zhou, N. Ruzycki, and U. Diebold, “Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate,” J. Appl. Phys. 91(10), 8411–8413 (2002).
[Crossref]

J. Dai, L. Spinu, K. Y. Wang, L. Malkinski, and J. Tang, “Channel switching and magnetoresistance of a metal-SiO2-Si structure,” J. Phys. D Appl. Phys. 33(11), L65–L67 (2000).
[Crossref]

Tang, M. H.

M. H. Tang, Z. Z. Zhang, Y. Y. Zhu, B. Ma, and Q. Y. Jin, “Role of TbFe on Perpendicular Magnetic Anisotropy and Giant Magnetoresistance Effect in [Co/Ni]N-Based Spin Valve,” Nano-Micro Lett. 6(4), 359–364 (2014).
[Crossref]

Taylor, B. J.

B. J. Taylor and M. B. Maple, “Formula for the Critical Temperature of Superconductors Based on the Electronic Density of States and the Effective Mass,” Phys. Rev. Lett. 102(13), 137003 (2009).
[Crossref] [PubMed]

Wang, H.

B. Zhang, L. Du, and H. Wang, “Bias-assisted improved lateral photovoltaic effect observed in Cu2O nano-films,” Opt. Express 22(2), 1661–1666 (2014).
[Crossref] [PubMed]

S. Liu, X. Xie, and H. Wang, “Lateral photovoltaic effect and electron transport observed in Cr nano-film,” Opt. Express 22(10), 11627–11632 (2014).
[Crossref] [PubMed]

S. Liu, P. Cheng, and H. Wang, “Bipolar resistance effect observed in CdSe quantum-dots dominated structure of Zn/CdSe/Si,” Opt. Lett. 37(11), 1814–1816 (2012).
[Crossref] [PubMed]

L. Du and H. Wang, “Infrared laser induced lateral photovoltaic effect observed in Cu 2 O nanoscale film,” Opt. Express 18(9), 9113–9118 (2010).
[Crossref] [PubMed]

C. Q. Yu and H. Wang, “Bias-induced offset effect overlapped on bipolar-resistance effect based on Co/SiO2/Si structure,” Appl. Phys. Lett. 97(4), 041105 (2010).
[Crossref]

C. Yu and H. Wang, “Light-induced bipolar-resistance effect based on metal-oxide-semiconductor structures of Ti/SiO2/Si,” Adv. Mater. 22(9), 966–970 (2010).
[Crossref] [PubMed]

C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
[Crossref] [PubMed]

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal–oxide–semiconductor structure,” New J. Phys. 10(9), 093006 (2008).
[Crossref]

S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, “The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures,” Opt. Express 16(6), 3798–3806 (2008).
[Crossref] [PubMed]

Wang, K.

J. Tang, J. Dai, K. Wang, W. Zhou, N. Ruzycki, and U. Diebold, “Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate,” J. Appl. Phys. 91(10), 8411–8413 (2002).
[Crossref]

Wang, K. Y.

J. Dai, L. Spinu, K. Y. Wang, L. Malkinski, and J. Tang, “Channel switching and magnetoresistance of a metal-SiO2-Si structure,” J. Phys. D Appl. Phys. 33(11), L65–L67 (2000).
[Crossref]

Wang, Z. H.

S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, “The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures,” Opt. Express 16(6), 3798–3806 (2008).
[Crossref] [PubMed]

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal–oxide–semiconductor structure,” New J. Phys. 10(9), 093006 (2008).
[Crossref]

Xia, Y. X.

Xiao, S. Q.

Xie, X.

Xu, R.

R. Xu, A. Husmann, T. Rosenbaum, M.-L. Saboungi, J. Enderby, and P. Littlewood, “Large magnetoresistance in non-magnetic silver chalcogenides,” Nature 390(6655), 57–60 (1997).
[Crossref]

Yen, A.

P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando, and M. A. Kastner, “Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas,” Phys. Rev. B Condens. Matter 45(16), 9214–9221 (1992).
[Crossref] [PubMed]

Yu, C.

C. Yu and H. Wang, “Light-induced bipolar-resistance effect based on metal-oxide-semiconductor structures of Ti/SiO2/Si,” Adv. Mater. 22(9), 966–970 (2010).
[Crossref] [PubMed]

Yu, C. Q.

C. Q. Yu and H. Wang, “Bias-induced offset effect overlapped on bipolar-resistance effect based on Co/SiO2/Si structure,” Appl. Phys. Lett. 97(4), 041105 (2010).
[Crossref]

C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
[Crossref] [PubMed]

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal–oxide–semiconductor structure,” New J. Phys. 10(9), 093006 (2008).
[Crossref]

Zhang, B.

Zhang, Z. Z.

M. H. Tang, Z. Z. Zhang, Y. Y. Zhu, B. Ma, and Q. Y. Jin, “Role of TbFe on Perpendicular Magnetic Anisotropy and Giant Magnetoresistance Effect in [Co/Ni]N-Based Spin Valve,” Nano-Micro Lett. 6(4), 359–364 (2014).
[Crossref]

Zhao, Z. C.

Zhou, W.

J. Tang, J. Dai, K. Wang, W. Zhou, N. Ruzycki, and U. Diebold, “Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate,” J. Appl. Phys. 91(10), 8411–8413 (2002).
[Crossref]

Zhu, Y. Y.

M. H. Tang, Z. Z. Zhang, Y. Y. Zhu, B. Ma, and Q. Y. Jin, “Role of TbFe on Perpendicular Magnetic Anisotropy and Giant Magnetoresistance Effect in [Co/Ni]N-Based Spin Valve,” Nano-Micro Lett. 6(4), 359–364 (2014).
[Crossref]

Adv. Mater. (1)

C. Yu and H. Wang, “Light-induced bipolar-resistance effect based on metal-oxide-semiconductor structures of Ti/SiO2/Si,” Adv. Mater. 22(9), 966–970 (2010).
[Crossref] [PubMed]

Appl. Phys. Lett. (2)

C. Q. Yu and H. Wang, “Bias-induced offset effect overlapped on bipolar-resistance effect based on Co/SiO2/Si structure,” Appl. Phys. Lett. 97(4), 041105 (2010).
[Crossref]

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, “Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/ semiconductor devices,” Appl. Phys. Lett. 72(14), 1724–1726 (1998).
[Crossref]

J. Appl. Phys. (2)

J. Tang, J. Dai, K. Wang, W. Zhou, N. Ruzycki, and U. Diebold, “Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate,” J. Appl. Phys. 91(10), 8411–8413 (2002).
[Crossref]

V. N. Dobrovolsky and A. N. Krolevets, “Theory of magnetic-field-sensitive metal–oxide–semiconductor field-effect transistors,” J. Appl. Phys. 85(3), 1956 (1999).
[Crossref]

J. Magn. Magn. Mater. (1)

H. B. de Carvalho, M. J. S. P. Brasil, M. Knobel, and J. C. Denardin, “Magnetotransport and electric properties of Co–SiO2–Si structure,” J. Magn. Magn. Mater. 272, 1157–1159 (2004).
[Crossref]

J. Phys. D Appl. Phys. (1)

J. Dai, L. Spinu, K. Y. Wang, L. Malkinski, and J. Tang, “Channel switching and magnetoresistance of a metal-SiO2-Si structure,” J. Phys. D Appl. Phys. 33(11), L65–L67 (2000).
[Crossref]

Nano-Micro Lett. (1)

M. H. Tang, Z. Z. Zhang, Y. Y. Zhu, B. Ma, and Q. Y. Jin, “Role of TbFe on Perpendicular Magnetic Anisotropy and Giant Magnetoresistance Effect in [Co/Ni]N-Based Spin Valve,” Nano-Micro Lett. 6(4), 359–364 (2014).
[Crossref]

Nature (1)

R. Xu, A. Husmann, T. Rosenbaum, M.-L. Saboungi, J. Enderby, and P. Littlewood, “Large magnetoresistance in non-magnetic silver chalcogenides,” Nature 390(6655), 57–60 (1997).
[Crossref]

New J. Phys. (1)

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal–oxide–semiconductor structure,” New J. Phys. 10(9), 093006 (2008).
[Crossref]

Opt. Express (5)

Opt. Lett. (1)

Phys. Rev. B Condens. Matter (1)

P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando, and M. A. Kastner, “Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas,” Phys. Rev. B Condens. Matter 45(16), 9214–9221 (1992).
[Crossref] [PubMed]

Phys. Rev. Lett. (4)

R. S. Markiewicz and L. A. Harris, “Two-Dimensional Resistivity of Ultrathin Metal Films,” Phys. Rev. Lett. 46(17), 1149–1153 (1981).
[Crossref]

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Figures (4)

Fig. 1
Fig. 1 (a) Measurement diagram of laser-induced resistance. (b) Laser-induced resistance on metal side as a function of laser (635 nm and 5 mW) position in Cr(4.5 nm)/SiO2(1.2 nm)/Si structure with AB = 1mm. The lines are linear fitting.
Fig. 2
Fig. 2 (a) The laser-induced resistance change ratio and spatial sensitivity with different AB distance and Cr thickness of 4.5 mm. The lines are linear fitting. (b) The laser-induced resistance change ratio and spatial sensitivity with different Cr thickness and AB = 1 mm. The lines are B-spline fitting.
Fig. 3
Fig. 3 (a) Measurement diagram of laser-induced resistance effect with external magnetic field applied. (b) The resistance change ratio with different Cr thickness. The lines are B-spline fitting. The inset shows peak value of resistance change ratio modulated by magnetic field.
Fig. 4
Fig. 4 (a) Schematic diffusion model in the Cr/SiO2/Si structure. (b) Schematic simple equilibrium energy-band diagram of the Cr/SiO2/Si structure. Egi and Egs denote the bandgaps of SiO2 and Si, respectively. Φmi is the metal-to-insulator barrier height and is related to the work function of Cr. Φsi is the semiconductor-to-insulator barrier height and is related to the work function of Si.

Equations (1)

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Δ R R 0 R 0 × 100 %

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