A. Elbaz, M. El Kurdi, A. Aassime, S. Sauvage, X. Checoury, I. Sagnes, F. Boeuf, and P. Boucaud, “Solving thermal issues in tensile-strained Ge microdisks,” Opt. Express 26(22), 28376–28384 (2018).
[Crossref]
Y. Zhou, Y. Miao, S. Ojo, H. Tran, G. Abernathy, J. M. Grant, S. Amoah, G. Salamo, W. Du, J. Liu, J. Margetis, J. Tolle, Y. Zhang, G. Sun, R. A. Soref, B. Li, and S.-Q. Yu, “Electrically injected GeSn lasers on Si operating up to 100 K,” Optica 7(8), 924–928 (2020).
[Crossref]
J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, and S.-Q. Yu, “Si-Based GeSn Lasers with Wavelength Coverage of 827–833 µm and Operating Temperatures up to 180 K,” ACS Photonics 5(3), 827–833 (2018).
[Crossref]
S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]
Y. Zhou, Y. Miao, S. Ojo, H. Tran, G. Abernathy, J. M. Grant, S. Amoah, G. Salamo, W. Du, J. Liu, J. Margetis, J. Tolle, Y. Zhang, G. Sun, R. A. Soref, B. Li, and S.-Q. Yu, “Electrically injected GeSn lasers on Si operating up to 100 K,” Optica 7(8), 924–928 (2020).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
J. Chrétien, N. Pauc, F. Armand Pilon, M. Bertrand, Q.-M. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J.-M. Hartmann, and V. Calvo, “GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain,” ACS Photonics 6(10), 2462–2469 (2019).
[Crossref]
V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, and V. Calvo, “Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 µm up to 180 K,” Appl. Phys. Lett. 111(9), 092101 (2017).
[Crossref]
D. Stange, N. von den Driesch, T. Zabel, F. Armand-Pilon, D. Rainko, B. Marzban, P. Zaumseil, J.-M. Hartmann, Z. Ikonic, G. Capellini, S. Mantl, H. Sigg, J. Witzens, D. Grützmacher, and D. Buca, “GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers,” ACS Photonics 5(11), 4628–4636 (2018).
[Crossref]
L. Groell, A. Attiaoui, S. Assali, and O. Moutanabbir, “Combined Iodine- and Sulfur-Based Treatments for an Effective Passivation of GeSn Surface,” J. Phys. Chem. C 125(17), 9516–9525 (2021).
[Crossref]
H.-J. Joo, Y. Kim, D. Burt, Y. Jung, L. Zhang, M. Chen, S. J. Parluhutan, D.-H. Kang, C. Lee, S. Assali, Z. Ikonic, O. Moutanabbir, Y.-H. Cho, C. S. Tan, and D. Nam, “1D photonic crystal direct bandgap GeSn-on-insulator laser,” Appl. Phys. Lett. 119(20), 201101 (2021).
[Crossref]
S. Assali, M. Elsayed, J. Nicolas, M. O. Liedke, A. Wagner, M. Butterling, R. Krause-Rehberg, and O. Moutanabbir, “Vacancy complexes in nonequilibrium germanium-tin semiconductors,” Appl. Phys. Lett. 114(25), 251907 (2019).
[Crossref]
L. Groell, A. Attiaoui, S. Assali, and O. Moutanabbir, “Combined Iodine- and Sulfur-Based Treatments for an Effective Passivation of GeSn Surface,” J. Phys. Chem. C 125(17), 9516–9525 (2021).
[Crossref]
Q. M. Thai, N. Pauc, J. Aubin, M. Bertrand, J. Chrétien, V. Delaye, A. Chelnokov, J.-M. Hartmann, V. Reboud, and V. Calvo, “GeSn heterostructure micro-disk laser operating at 230 K,” Opt. Express 26(25), 32500–32508 (2018).
[Crossref]
J. Aubin, J. M. Hartmann, A. Gassenq, L. Milord, N. Pauc, V. Reboud, and V. Calvo, “Impact of thickness on the structural properties of high tin content GeSn layers,” J. Cryst. Growth 473, 20–27 (2017).
[Crossref]
V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, and V. Calvo, “Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 µm up to 180 K,” Appl. Phys. Lett. 111(9), 092101 (2017).
[Crossref]
J. Chrétien, N. Pauc, F. Armand Pilon, M. Bertrand, Q.-M. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J.-M. Hartmann, and V. Calvo, “GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain,” ACS Photonics 6(10), 2462–2469 (2019).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
J. Chrétien, N. Pauc, F. Armand Pilon, M. Bertrand, Q.-M. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J.-M. Hartmann, and V. Calvo, “GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain,” ACS Photonics 6(10), 2462–2469 (2019).
[Crossref]
W. Du, Q. M. Thai, J. Chrétien, M. Bertrand, L. Casiez, Y. Zhou, J. Margetis, N. Pauc, A. Chelnokov, V. Reboud, V. Calvo, J. Tolle, B. Li, and S.-Q. Yu, “Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures,” Front. Phys. 7, 147 (2019).
[Crossref]
Q. M. Thai, N. Pauc, J. Aubin, M. Bertrand, J. Chrétien, V. Delaye, A. Chelnokov, J.-M. Hartmann, V. Reboud, and V. Calvo, “GeSn heterostructure micro-disk laser operating at 230 K,” Opt. Express 26(25), 32500–32508 (2018).
[Crossref]
V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, and V. Calvo, “Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 µm up to 180 K,” Appl. Phys. Lett. 111(9), 092101 (2017).
[Crossref]
J. M. Hartmann, A. M. Papon, V. Destefanis, and T. Billon, “Reduced pressure chemical vapor deposition of Ge thick layers on Si(001), Si(011) and Si(111),” J. Cryst. Growth 310(24), 5287–5296 (2008).
[Crossref]
B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “GeSnOI mid-infrared laser technology,” Light: Sci. Appl. 10(1), 232 (2021).
[Crossref]
B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “GeSnOI mid-infrared laser technology,” Light: Sci. Appl. 10(1), 232 (2021).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, and M. El Kurdi, “Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys,” Nat. Photonics 14(6), 375–382 (2020).
[Crossref]
A. Elbaz, M. El Kurdi, A. Aassime, S. Sauvage, X. Checoury, I. Sagnes, F. Boeuf, and P. Boucaud, “Solving thermal issues in tensile-strained Ge microdisks,” Opt. Express 26(22), 28376–28384 (2018).
[Crossref]
B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “GeSnOI mid-infrared laser technology,” Light: Sci. Appl. 10(1), 232 (2021).
[Crossref]
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, and M. El Kurdi, “Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys,” Nat. Photonics 14(6), 375–382 (2020).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
D. Rainko, Z. Ikonic, A. Elbaz, N. von den Driesch, D. Stange, E. Herth, P. Boucaud, M. El Kurdi, D. Grützmacher, and D. Buca, “Impact of tensile strain on low Sn content GeSn lasing,” Sci. Rep. 9(1), 259 (2019).
[Crossref]
A. Elbaz, M. El Kurdi, A. Aassime, S. Sauvage, X. Checoury, I. Sagnes, F. Boeuf, and P. Boucaud, “Solving thermal issues in tensile-strained Ge microdisks,” Opt. Express 26(22), 28376–28384 (2018).
[Crossref]
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, and M. El Kurdi, “Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys,” Nat. Photonics 14(6), 375–382 (2020).
[Crossref]
D. Rainko, Z. Ikonic, A. Elbaz, N. von den Driesch, D. Stange, E. Herth, P. Boucaud, M. El Kurdi, D. Grützmacher, and D. Buca, “Impact of tensile strain on low Sn content GeSn lasing,” Sci. Rep. 9(1), 259 (2019).
[Crossref]
P. Zaumseil, Y. Hou, M. A. Schubert, N. von den Driesch, D. Stange, D. Rainko, M. Virgilio, D. Buca, and G. Capellini, “The thermal stability of epitaxial GeSn layers,” APL Materials 6, 076108 (2018).
[Crossref]
D. Stange, N. von den Driesch, T. Zabel, F. Armand-Pilon, D. Rainko, B. Marzban, P. Zaumseil, J.-M. Hartmann, Z. Ikonic, G. Capellini, S. Mantl, H. Sigg, J. Witzens, D. Grützmacher, and D. Buca, “GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers,” ACS Photonics 5(11), 4628–4636 (2018).
[Crossref]
D. Stange, N. von den Driesch, D. Rainko, S. Roesgaard, I. Povstugar, J.-M. Hartmann, T. Stoica, Z. Ikonic, S. Mantl, D. Grützmacher, and D. Buca, “Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells,” Optica 4(2), 185–188 (2017).
[Crossref]
D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3(7), 1279–1285 (2016).
[Crossref]
S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]
D. Burt, H.-J. Joo, Y. Jung, Y. Kim, M. Chen, Y.-C. Huang, and D. Nam, “Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks,” Opt. Express 29(18), 28959–28967 (2021).
[Crossref]
H.-J. Joo, Y. Kim, D. Burt, Y. Jung, L. Zhang, M. Chen, S. J. Parluhutan, D.-H. Kang, C. Lee, S. Assali, Z. Ikonic, O. Moutanabbir, Y.-H. Cho, C. S. Tan, and D. Nam, “1D photonic crystal direct bandgap GeSn-on-insulator laser,” Appl. Phys. Lett. 119(20), 201101 (2021).
[Crossref]
I. Rousseau, G. Callsen, G. Jacopin, J.-F. Carlin, R. Butté, and N. Grandjean, “Optical absorption and oxygen passivation of surface states in III-nitride photonic devices,” J. Appl. Phys. 123(11), 113103 (2018).
[Crossref]
S. Assali, M. Elsayed, J. Nicolas, M. O. Liedke, A. Wagner, M. Butterling, R. Krause-Rehberg, and O. Moutanabbir, “Vacancy complexes in nonequilibrium germanium-tin semiconductors,” Appl. Phys. Lett. 114(25), 251907 (2019).
[Crossref]
I. Rousseau, G. Callsen, G. Jacopin, J.-F. Carlin, R. Butté, and N. Grandjean, “Optical absorption and oxygen passivation of surface states in III-nitride photonic devices,” J. Appl. Phys. 123(11), 113103 (2018).
[Crossref]
B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “GeSnOI mid-infrared laser technology,” Light: Sci. Appl. 10(1), 232 (2021).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
J. Chrétien, N. Pauc, F. Armand Pilon, M. Bertrand, Q.-M. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J.-M. Hartmann, and V. Calvo, “GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain,” ACS Photonics 6(10), 2462–2469 (2019).
[Crossref]
W. Du, Q. M. Thai, J. Chrétien, M. Bertrand, L. Casiez, Y. Zhou, J. Margetis, N. Pauc, A. Chelnokov, V. Reboud, V. Calvo, J. Tolle, B. Li, and S.-Q. Yu, “Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures,” Front. Phys. 7, 147 (2019).
[Crossref]
Q. M. Thai, N. Pauc, J. Aubin, M. Bertrand, J. Chrétien, V. Delaye, A. Chelnokov, J.-M. Hartmann, V. Reboud, and V. Calvo, “GeSn heterostructure micro-disk laser operating at 230 K,” Opt. Express 26(25), 32500–32508 (2018).
[Crossref]
J. Aubin, J. M. Hartmann, A. Gassenq, L. Milord, N. Pauc, V. Reboud, and V. Calvo, “Impact of thickness on the structural properties of high tin content GeSn layers,” J. Cryst. Growth 473, 20–27 (2017).
[Crossref]
V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, and V. Calvo, “Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 µm up to 180 K,” Appl. Phys. Lett. 111(9), 092101 (2017).
[Crossref]
P. Zaumseil, Y. Hou, M. A. Schubert, N. von den Driesch, D. Stange, D. Rainko, M. Virgilio, D. Buca, and G. Capellini, “The thermal stability of epitaxial GeSn layers,” APL Materials 6, 076108 (2018).
[Crossref]
D. Stange, N. von den Driesch, T. Zabel, F. Armand-Pilon, D. Rainko, B. Marzban, P. Zaumseil, J.-M. Hartmann, Z. Ikonic, G. Capellini, S. Mantl, H. Sigg, J. Witzens, D. Grützmacher, and D. Buca, “GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers,” ACS Photonics 5(11), 4628–4636 (2018).
[Crossref]
I. Rousseau, G. Callsen, G. Jacopin, J.-F. Carlin, R. Butté, and N. Grandjean, “Optical absorption and oxygen passivation of surface states in III-nitride photonic devices,” J. Appl. Phys. 123(11), 113103 (2018).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
J. Chrétien, N. Pauc, F. Armand Pilon, M. Bertrand, Q.-M. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J.-M. Hartmann, and V. Calvo, “GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain,” ACS Photonics 6(10), 2462–2469 (2019).
[Crossref]
W. Du, Q. M. Thai, J. Chrétien, M. Bertrand, L. Casiez, Y. Zhou, J. Margetis, N. Pauc, A. Chelnokov, V. Reboud, V. Calvo, J. Tolle, B. Li, and S.-Q. Yu, “Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures,” Front. Phys. 7, 147 (2019).
[Crossref]
B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “GeSnOI mid-infrared laser technology,” Light: Sci. Appl. 10(1), 232 (2021).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, and M. El Kurdi, “Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys,” Nat. Photonics 14(6), 375–382 (2020).
[Crossref]
A. Elbaz, M. El Kurdi, A. Aassime, S. Sauvage, X. Checoury, I. Sagnes, F. Boeuf, and P. Boucaud, “Solving thermal issues in tensile-strained Ge microdisks,” Opt. Express 26(22), 28376–28384 (2018).
[Crossref]
B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “GeSnOI mid-infrared laser technology,” Light: Sci. Appl. 10(1), 232 (2021).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
J. Chrétien, N. Pauc, F. Armand Pilon, M. Bertrand, Q.-M. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J.-M. Hartmann, and V. Calvo, “GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain,” ACS Photonics 6(10), 2462–2469 (2019).
[Crossref]
W. Du, Q. M. Thai, J. Chrétien, M. Bertrand, L. Casiez, Y. Zhou, J. Margetis, N. Pauc, A. Chelnokov, V. Reboud, V. Calvo, J. Tolle, B. Li, and S.-Q. Yu, “Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures,” Front. Phys. 7, 147 (2019).
[Crossref]
Q. M. Thai, N. Pauc, J. Aubin, M. Bertrand, J. Chrétien, V. Delaye, A. Chelnokov, J.-M. Hartmann, V. Reboud, and V. Calvo, “GeSn heterostructure micro-disk laser operating at 230 K,” Opt. Express 26(25), 32500–32508 (2018).
[Crossref]
V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, and V. Calvo, “Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 µm up to 180 K,” Appl. Phys. Lett. 111(9), 092101 (2017).
[Crossref]
D. Burt, H.-J. Joo, Y. Jung, Y. Kim, M. Chen, Y.-C. Huang, and D. Nam, “Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks,” Opt. Express 29(18), 28959–28967 (2021).
[Crossref]
H.-J. Joo, Y. Kim, D. Burt, Y. Jung, L. Zhang, M. Chen, S. J. Parluhutan, D.-H. Kang, C. Lee, S. Assali, Z. Ikonic, O. Moutanabbir, Y.-H. Cho, C. S. Tan, and D. Nam, “1D photonic crystal direct bandgap GeSn-on-insulator laser,” Appl. Phys. Lett. 119(20), 201101 (2021).
[Crossref]
Y. Zhou, W. Dou, W. Du, S. Ojo, H. Tran, S. A. Ghetmiri, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, Z. Chen, M. Mortazavi, and S.-Q. Yu, “Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si,” ACS Photonics 6(6), 1434–1441 (2019).
[Crossref]
S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]
H.-J. Joo, Y. Kim, D. Burt, Y. Jung, L. Zhang, M. Chen, S. J. Parluhutan, D.-H. Kang, C. Lee, S. Assali, Z. Ikonic, O. Moutanabbir, Y.-H. Cho, C. S. Tan, and D. Nam, “1D photonic crystal direct bandgap GeSn-on-insulator laser,” Appl. Phys. Lett. 119(20), 201101 (2021).
[Crossref]
B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “GeSnOI mid-infrared laser technology,” Light: Sci. Appl. 10(1), 232 (2021).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
J. Chrétien, N. Pauc, F. Armand Pilon, M. Bertrand, Q.-M. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J.-M. Hartmann, and V. Calvo, “GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain,” ACS Photonics 6(10), 2462–2469 (2019).
[Crossref]
W. Du, Q. M. Thai, J. Chrétien, M. Bertrand, L. Casiez, Y. Zhou, J. Margetis, N. Pauc, A. Chelnokov, V. Reboud, V. Calvo, J. Tolle, B. Li, and S.-Q. Yu, “Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures,” Front. Phys. 7, 147 (2019).
[Crossref]
Q. M. Thai, N. Pauc, J. Aubin, M. Bertrand, J. Chrétien, V. Delaye, A. Chelnokov, J.-M. Hartmann, V. Reboud, and V. Calvo, “GeSn heterostructure micro-disk laser operating at 230 K,” Opt. Express 26(25), 32500–32508 (2018).
[Crossref]
S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]
J. Chrétien, N. Pauc, F. Armand Pilon, M. Bertrand, Q.-M. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J.-M. Hartmann, and V. Calvo, “GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain,” ACS Photonics 6(10), 2462–2469 (2019).
[Crossref]
J. Chrétien, N. Pauc, F. Armand Pilon, M. Bertrand, Q.-M. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J.-M. Hartmann, and V. Calvo, “GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain,” ACS Photonics 6(10), 2462–2469 (2019).
[Crossref]
Q. M. Thai, N. Pauc, J. Aubin, M. Bertrand, J. Chrétien, V. Delaye, A. Chelnokov, J.-M. Hartmann, V. Reboud, and V. Calvo, “GeSn heterostructure micro-disk laser operating at 230 K,” Opt. Express 26(25), 32500–32508 (2018).
[Crossref]
J. M. Hartmann, A. M. Papon, V. Destefanis, and T. Billon, “Reduced pressure chemical vapor deposition of Ge thick layers on Si(001), Si(011) and Si(111),” J. Cryst. Growth 310(24), 5287–5296 (2008).
[Crossref]
Y. Zhou, W. Dou, W. Du, S. Ojo, H. Tran, S. A. Ghetmiri, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, Z. Chen, M. Mortazavi, and S.-Q. Yu, “Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si,” ACS Photonics 6(6), 1434–1441 (2019).
[Crossref]
J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, and S.-Q. Yu, “Si-Based GeSn Lasers with Wavelength Coverage of 827–833 µm and Operating Temperatures up to 180 K,” ACS Photonics 5(3), 827–833 (2018).
[Crossref]
S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]
Y. Zhou, Y. Miao, S. Ojo, H. Tran, G. Abernathy, J. M. Grant, S. Amoah, G. Salamo, W. Du, J. Liu, J. Margetis, J. Tolle, Y. Zhang, G. Sun, R. A. Soref, B. Li, and S.-Q. Yu, “Electrically injected GeSn lasers on Si operating up to 100 K,” Optica 7(8), 924–928 (2020).
[Crossref]
Y. Zhou, W. Dou, W. Du, S. Ojo, H. Tran, S. A. Ghetmiri, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, Z. Chen, M. Mortazavi, and S.-Q. Yu, “Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si,” ACS Photonics 6(6), 1434–1441 (2019).
[Crossref]
W. Du, Q. M. Thai, J. Chrétien, M. Bertrand, L. Casiez, Y. Zhou, J. Margetis, N. Pauc, A. Chelnokov, V. Reboud, V. Calvo, J. Tolle, B. Li, and S.-Q. Yu, “Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures,” Front. Phys. 7, 147 (2019).
[Crossref]
J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, and S.-Q. Yu, “Si-Based GeSn Lasers with Wavelength Coverage of 827–833 µm and Operating Temperatures up to 180 K,” ACS Photonics 5(3), 827–833 (2018).
[Crossref]
S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]
B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “GeSnOI mid-infrared laser technology,” Light: Sci. Appl. 10(1), 232 (2021).
[Crossref]
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, and M. El Kurdi, “Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys,” Nat. Photonics 14(6), 375–382 (2020).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
D. Rainko, Z. Ikonic, A. Elbaz, N. von den Driesch, D. Stange, E. Herth, P. Boucaud, M. El Kurdi, D. Grützmacher, and D. Buca, “Impact of tensile strain on low Sn content GeSn lasing,” Sci. Rep. 9(1), 259 (2019).
[Crossref]
A. Elbaz, M. El Kurdi, A. Aassime, S. Sauvage, X. Checoury, I. Sagnes, F. Boeuf, and P. Boucaud, “Solving thermal issues in tensile-strained Ge microdisks,” Opt. Express 26(22), 28376–28384 (2018).
[Crossref]
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, and M. El Kurdi, “Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys,” Nat. Photonics 14(6), 375–382 (2020).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
D. Rainko, Z. Ikonic, A. Elbaz, N. von den Driesch, D. Stange, E. Herth, P. Boucaud, M. El Kurdi, D. Grützmacher, and D. Buca, “Impact of tensile strain on low Sn content GeSn lasing,” Sci. Rep. 9(1), 259 (2019).
[Crossref]
A. Elbaz, M. El Kurdi, A. Aassime, S. Sauvage, X. Checoury, I. Sagnes, F. Boeuf, and P. Boucaud, “Solving thermal issues in tensile-strained Ge microdisks,” Opt. Express 26(22), 28376–28384 (2018).
[Crossref]
S. Assali, M. Elsayed, J. Nicolas, M. O. Liedke, A. Wagner, M. Butterling, R. Krause-Rehberg, and O. Moutanabbir, “Vacancy complexes in nonequilibrium germanium-tin semiconductors,” Appl. Phys. Lett. 114(25), 251907 (2019).
[Crossref]
J. Chrétien, N. Pauc, F. Armand Pilon, M. Bertrand, Q.-M. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J.-M. Hartmann, and V. Calvo, “GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain,” ACS Photonics 6(10), 2462–2469 (2019).
[Crossref]
S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, and M. El Kurdi, “Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys,” Nat. Photonics 14(6), 375–382 (2020).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “GeSnOI mid-infrared laser technology,” Light: Sci. Appl. 10(1), 232 (2021).
[Crossref]
J. Aubin, J. M. Hartmann, A. Gassenq, L. Milord, N. Pauc, V. Reboud, and V. Calvo, “Impact of thickness on the structural properties of high tin content GeSn layers,” J. Cryst. Growth 473, 20–27 (2017).
[Crossref]
V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, and V. Calvo, “Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 µm up to 180 K,” Appl. Phys. Lett. 111(9), 092101 (2017).
[Crossref]
D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3(7), 1279–1285 (2016).
[Crossref]
S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]
J. Chrétien, N. Pauc, F. Armand Pilon, M. Bertrand, Q.-M. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J.-M. Hartmann, and V. Calvo, “GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain,” ACS Photonics 6(10), 2462–2469 (2019).
[Crossref]
J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, and S.-Q. Yu, “Si-Based GeSn Lasers with Wavelength Coverage of 827–833 µm and Operating Temperatures up to 180 K,” ACS Photonics 5(3), 827–833 (2018).
[Crossref]
Y. Zhou, W. Dou, W. Du, S. Ojo, H. Tran, S. A. Ghetmiri, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, Z. Chen, M. Mortazavi, and S.-Q. Yu, “Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si,” ACS Photonics 6(6), 1434–1441 (2019).
[Crossref]
S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]
I. Rousseau, G. Callsen, G. Jacopin, J.-F. Carlin, R. Butté, and N. Grandjean, “Optical absorption and oxygen passivation of surface states in III-nitride photonic devices,” J. Appl. Phys. 123(11), 113103 (2018).
[Crossref]
Y. Zhou, Y. Miao, S. Ojo, H. Tran, G. Abernathy, J. M. Grant, S. Amoah, G. Salamo, W. Du, J. Liu, J. Margetis, J. Tolle, Y. Zhang, G. Sun, R. A. Soref, B. Li, and S.-Q. Yu, “Electrically injected GeSn lasers on Si operating up to 100 K,” Optica 7(8), 924–928 (2020).
[Crossref]
J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, and S.-Q. Yu, “Si-Based GeSn Lasers with Wavelength Coverage of 827–833 µm and Operating Temperatures up to 180 K,” ACS Photonics 5(3), 827–833 (2018).
[Crossref]
L. Groell, A. Attiaoui, S. Assali, and O. Moutanabbir, “Combined Iodine- and Sulfur-Based Treatments for an Effective Passivation of GeSn Surface,” J. Phys. Chem. C 125(17), 9516–9525 (2021).
[Crossref]
B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “GeSnOI mid-infrared laser technology,” Light: Sci. Appl. 10(1), 232 (2021).
[Crossref]
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, and M. El Kurdi, “Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys,” Nat. Photonics 14(6), 375–382 (2020).
[Crossref]
D. Rainko, Z. Ikonic, A. Elbaz, N. von den Driesch, D. Stange, E. Herth, P. Boucaud, M. El Kurdi, D. Grützmacher, and D. Buca, “Impact of tensile strain on low Sn content GeSn lasing,” Sci. Rep. 9(1), 259 (2019).
[Crossref]
D. Stange, N. von den Driesch, T. Zabel, F. Armand-Pilon, D. Rainko, B. Marzban, P. Zaumseil, J.-M. Hartmann, Z. Ikonic, G. Capellini, S. Mantl, H. Sigg, J. Witzens, D. Grützmacher, and D. Buca, “GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers,” ACS Photonics 5(11), 4628–4636 (2018).
[Crossref]
D. Stange, N. von den Driesch, D. Rainko, S. Roesgaard, I. Povstugar, J.-M. Hartmann, T. Stoica, Z. Ikonic, S. Mantl, D. Grützmacher, and D. Buca, “Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells,” Optica 4(2), 185–188 (2017).
[Crossref]
D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3(7), 1279–1285 (2016).
[Crossref]
S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]
V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, and V. Calvo, “Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 µm up to 180 K,” Appl. Phys. Lett. 111(9), 092101 (2017).
[Crossref]
V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, and V. Calvo, “Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 µm up to 180 K,” Appl. Phys. Lett. 111(9), 092101 (2017).
[Crossref]
J. Aubin, J. M. Hartmann, A. Gassenq, L. Milord, N. Pauc, V. Reboud, and V. Calvo, “Impact of thickness on the structural properties of high tin content GeSn layers,” J. Cryst. Growth 473, 20–27 (2017).
[Crossref]
S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]
J. M. Hartmann, A. M. Papon, V. Destefanis, and T. Billon, “Reduced pressure chemical vapor deposition of Ge thick layers on Si(001), Si(011) and Si(111),” J. Cryst. Growth 310(24), 5287–5296 (2008).
[Crossref]
B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “GeSnOI mid-infrared laser technology,” Light: Sci. Appl. 10(1), 232 (2021).
[Crossref]
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, and M. El Kurdi, “Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys,” Nat. Photonics 14(6), 375–382 (2020).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
J. Chrétien, N. Pauc, F. Armand Pilon, M. Bertrand, Q.-M. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J.-M. Hartmann, and V. Calvo, “GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain,” ACS Photonics 6(10), 2462–2469 (2019).
[Crossref]
D. Stange, N. von den Driesch, T. Zabel, F. Armand-Pilon, D. Rainko, B. Marzban, P. Zaumseil, J.-M. Hartmann, Z. Ikonic, G. Capellini, S. Mantl, H. Sigg, J. Witzens, D. Grützmacher, and D. Buca, “GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers,” ACS Photonics 5(11), 4628–4636 (2018).
[Crossref]
Q. M. Thai, N. Pauc, J. Aubin, M. Bertrand, J. Chrétien, V. Delaye, A. Chelnokov, J.-M. Hartmann, V. Reboud, and V. Calvo, “GeSn heterostructure micro-disk laser operating at 230 K,” Opt. Express 26(25), 32500–32508 (2018).
[Crossref]
D. Stange, N. von den Driesch, D. Rainko, S. Roesgaard, I. Povstugar, J.-M. Hartmann, T. Stoica, Z. Ikonic, S. Mantl, D. Grützmacher, and D. Buca, “Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells,” Optica 4(2), 185–188 (2017).
[Crossref]
D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3(7), 1279–1285 (2016).
[Crossref]
B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “GeSnOI mid-infrared laser technology,” Light: Sci. Appl. 10(1), 232 (2021).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, and M. El Kurdi, “Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys,” Nat. Photonics 14(6), 375–382 (2020).
[Crossref]
D. Rainko, Z. Ikonic, A. Elbaz, N. von den Driesch, D. Stange, E. Herth, P. Boucaud, M. El Kurdi, D. Grützmacher, and D. Buca, “Impact of tensile strain on low Sn content GeSn lasing,” Sci. Rep. 9(1), 259 (2019).
[Crossref]
P. Zaumseil, Y. Hou, M. A. Schubert, N. von den Driesch, D. Stange, D. Rainko, M. Virgilio, D. Buca, and G. Capellini, “The thermal stability of epitaxial GeSn layers,” APL Materials 6, 076108 (2018).
[Crossref]
H.-J. Joo, Y. Kim, D. Burt, Y. Jung, L. Zhang, M. Chen, S. J. Parluhutan, D.-H. Kang, C. Lee, S. Assali, Z. Ikonic, O. Moutanabbir, Y.-H. Cho, C. S. Tan, and D. Nam, “1D photonic crystal direct bandgap GeSn-on-insulator laser,” Appl. Phys. Lett. 119(20), 201101 (2021).
[Crossref]
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, and M. El Kurdi, “Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys,” Nat. Photonics 14(6), 375–382 (2020).
[Crossref]
D. Rainko, Z. Ikonic, A. Elbaz, N. von den Driesch, D. Stange, E. Herth, P. Boucaud, M. El Kurdi, D. Grützmacher, and D. Buca, “Impact of tensile strain on low Sn content GeSn lasing,” Sci. Rep. 9(1), 259 (2019).
[Crossref]
D. Stange, N. von den Driesch, T. Zabel, F. Armand-Pilon, D. Rainko, B. Marzban, P. Zaumseil, J.-M. Hartmann, Z. Ikonic, G. Capellini, S. Mantl, H. Sigg, J. Witzens, D. Grützmacher, and D. Buca, “GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers,” ACS Photonics 5(11), 4628–4636 (2018).
[Crossref]
D. Stange, N. von den Driesch, D. Rainko, S. Roesgaard, I. Povstugar, J.-M. Hartmann, T. Stoica, Z. Ikonic, S. Mantl, D. Grützmacher, and D. Buca, “Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells,” Optica 4(2), 185–188 (2017).
[Crossref]
D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3(7), 1279–1285 (2016).
[Crossref]
S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]
I. Rousseau, G. Callsen, G. Jacopin, J.-F. Carlin, R. Butté, and N. Grandjean, “Optical absorption and oxygen passivation of surface states in III-nitride photonic devices,” J. Appl. Phys. 123(11), 113103 (2018).
[Crossref]
H.-J. Joo, Y. Kim, D. Burt, Y. Jung, L. Zhang, M. Chen, S. J. Parluhutan, D.-H. Kang, C. Lee, S. Assali, Z. Ikonic, O. Moutanabbir, Y.-H. Cho, C. S. Tan, and D. Nam, “1D photonic crystal direct bandgap GeSn-on-insulator laser,” Appl. Phys. Lett. 119(20), 201101 (2021).
[Crossref]
D. Burt, H.-J. Joo, Y. Jung, Y. Kim, M. Chen, Y.-C. Huang, and D. Nam, “Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks,” Opt. Express 29(18), 28959–28967 (2021).
[Crossref]
D. Burt, H.-J. Joo, Y. Jung, Y. Kim, M. Chen, Y.-C. Huang, and D. Nam, “Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks,” Opt. Express 29(18), 28959–28967 (2021).
[Crossref]
H.-J. Joo, Y. Kim, D. Burt, Y. Jung, L. Zhang, M. Chen, S. J. Parluhutan, D.-H. Kang, C. Lee, S. Assali, Z. Ikonic, O. Moutanabbir, Y.-H. Cho, C. S. Tan, and D. Nam, “1D photonic crystal direct bandgap GeSn-on-insulator laser,” Appl. Phys. Lett. 119(20), 201101 (2021).
[Crossref]
H.-J. Joo, Y. Kim, D. Burt, Y. Jung, L. Zhang, M. Chen, S. J. Parluhutan, D.-H. Kang, C. Lee, S. Assali, Z. Ikonic, O. Moutanabbir, Y.-H. Cho, C. S. Tan, and D. Nam, “1D photonic crystal direct bandgap GeSn-on-insulator laser,” Appl. Phys. Lett. 119(20), 201101 (2021).
[Crossref]
J. Chrétien, N. Pauc, F. Armand Pilon, M. Bertrand, Q.-M. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J.-M. Hartmann, and V. Calvo, “GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain,” ACS Photonics 6(10), 2462–2469 (2019).
[Crossref]
H.-J. Joo, Y. Kim, D. Burt, Y. Jung, L. Zhang, M. Chen, S. J. Parluhutan, D.-H. Kang, C. Lee, S. Assali, Z. Ikonic, O. Moutanabbir, Y.-H. Cho, C. S. Tan, and D. Nam, “1D photonic crystal direct bandgap GeSn-on-insulator laser,” Appl. Phys. Lett. 119(20), 201101 (2021).
[Crossref]
D. Burt, H.-J. Joo, Y. Jung, Y. Kim, M. Chen, Y.-C. Huang, and D. Nam, “Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks,” Opt. Express 29(18), 28959–28967 (2021).
[Crossref]
S. Assali, M. Elsayed, J. Nicolas, M. O. Liedke, A. Wagner, M. Butterling, R. Krause-Rehberg, and O. Moutanabbir, “Vacancy complexes in nonequilibrium germanium-tin semiconductors,” Appl. Phys. Lett. 114(25), 251907 (2019).
[Crossref]
H.-J. Joo, Y. Kim, D. Burt, Y. Jung, L. Zhang, M. Chen, S. J. Parluhutan, D.-H. Kang, C. Lee, S. Assali, Z. Ikonic, O. Moutanabbir, Y.-H. Cho, C. S. Tan, and D. Nam, “1D photonic crystal direct bandgap GeSn-on-insulator laser,” Appl. Phys. Lett. 119(20), 201101 (2021).
[Crossref]
Y. Zhou, Y. Miao, S. Ojo, H. Tran, G. Abernathy, J. M. Grant, S. Amoah, G. Salamo, W. Du, J. Liu, J. Margetis, J. Tolle, Y. Zhang, G. Sun, R. A. Soref, B. Li, and S.-Q. Yu, “Electrically injected GeSn lasers on Si operating up to 100 K,” Optica 7(8), 924–928 (2020).
[Crossref]
Y. Zhou, W. Dou, W. Du, S. Ojo, H. Tran, S. A. Ghetmiri, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, Z. Chen, M. Mortazavi, and S.-Q. Yu, “Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si,” ACS Photonics 6(6), 1434–1441 (2019).
[Crossref]
W. Du, Q. M. Thai, J. Chrétien, M. Bertrand, L. Casiez, Y. Zhou, J. Margetis, N. Pauc, A. Chelnokov, V. Reboud, V. Calvo, J. Tolle, B. Li, and S.-Q. Yu, “Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures,” Front. Phys. 7, 147 (2019).
[Crossref]
J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, and S.-Q. Yu, “Si-Based GeSn Lasers with Wavelength Coverage of 827–833 µm and Operating Temperatures up to 180 K,” ACS Photonics 5(3), 827–833 (2018).
[Crossref]
S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]
S. Assali, M. Elsayed, J. Nicolas, M. O. Liedke, A. Wagner, M. Butterling, R. Krause-Rehberg, and O. Moutanabbir, “Vacancy complexes in nonequilibrium germanium-tin semiconductors,” Appl. Phys. Lett. 114(25), 251907 (2019).
[Crossref]
Y. Zhou, Y. Miao, S. Ojo, H. Tran, G. Abernathy, J. M. Grant, S. Amoah, G. Salamo, W. Du, J. Liu, J. Margetis, J. Tolle, Y. Zhang, G. Sun, R. A. Soref, B. Li, and S.-Q. Yu, “Electrically injected GeSn lasers on Si operating up to 100 K,” Optica 7(8), 924–928 (2020).
[Crossref]
Y. Zhou, W. Dou, W. Du, S. Ojo, H. Tran, S. A. Ghetmiri, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, Z. Chen, M. Mortazavi, and S.-Q. Yu, “Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si,” ACS Photonics 6(6), 1434–1441 (2019).
[Crossref]
J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, and S.-Q. Yu, “Si-Based GeSn Lasers with Wavelength Coverage of 827–833 µm and Operating Temperatures up to 180 K,” ACS Photonics 5(3), 827–833 (2018).
[Crossref]
S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]
S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]
D. Stange, N. von den Driesch, T. Zabel, F. Armand-Pilon, D. Rainko, B. Marzban, P. Zaumseil, J.-M. Hartmann, Z. Ikonic, G. Capellini, S. Mantl, H. Sigg, J. Witzens, D. Grützmacher, and D. Buca, “GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers,” ACS Photonics 5(11), 4628–4636 (2018).
[Crossref]
D. Stange, N. von den Driesch, D. Rainko, S. Roesgaard, I. Povstugar, J.-M. Hartmann, T. Stoica, Z. Ikonic, S. Mantl, D. Grützmacher, and D. Buca, “Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells,” Optica 4(2), 185–188 (2017).
[Crossref]
D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3(7), 1279–1285 (2016).
[Crossref]
S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]
Y. Zhou, Y. Miao, S. Ojo, H. Tran, G. Abernathy, J. M. Grant, S. Amoah, G. Salamo, W. Du, J. Liu, J. Margetis, J. Tolle, Y. Zhang, G. Sun, R. A. Soref, B. Li, and S.-Q. Yu, “Electrically injected GeSn lasers on Si operating up to 100 K,” Optica 7(8), 924–928 (2020).
[Crossref]
Y. Zhou, W. Dou, W. Du, S. Ojo, H. Tran, S. A. Ghetmiri, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, Z. Chen, M. Mortazavi, and S.-Q. Yu, “Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si,” ACS Photonics 6(6), 1434–1441 (2019).
[Crossref]
W. Du, Q. M. Thai, J. Chrétien, M. Bertrand, L. Casiez, Y. Zhou, J. Margetis, N. Pauc, A. Chelnokov, V. Reboud, V. Calvo, J. Tolle, B. Li, and S.-Q. Yu, “Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures,” Front. Phys. 7, 147 (2019).
[Crossref]
J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, and S.-Q. Yu, “Si-Based GeSn Lasers with Wavelength Coverage of 827–833 µm and Operating Temperatures up to 180 K,” ACS Photonics 5(3), 827–833 (2018).
[Crossref]
S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]
D. Stange, N. von den Driesch, T. Zabel, F. Armand-Pilon, D. Rainko, B. Marzban, P. Zaumseil, J.-M. Hartmann, Z. Ikonic, G. Capellini, S. Mantl, H. Sigg, J. Witzens, D. Grützmacher, and D. Buca, “GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers,” ACS Photonics 5(11), 4628–4636 (2018).
[Crossref]
D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3(7), 1279–1285 (2016).
[Crossref]
Y. Zhou, Y. Miao, S. Ojo, H. Tran, G. Abernathy, J. M. Grant, S. Amoah, G. Salamo, W. Du, J. Liu, J. Margetis, J. Tolle, Y. Zhang, G. Sun, R. A. Soref, B. Li, and S.-Q. Yu, “Electrically injected GeSn lasers on Si operating up to 100 K,” Optica 7(8), 924–928 (2020).
[Crossref]
J. Aubin, J. M. Hartmann, A. Gassenq, L. Milord, N. Pauc, V. Reboud, and V. Calvo, “Impact of thickness on the structural properties of high tin content GeSn layers,” J. Cryst. Growth 473, 20–27 (2017).
[Crossref]
V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, and V. Calvo, “Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 µm up to 180 K,” Appl. Phys. Lett. 111(9), 092101 (2017).
[Crossref]
Y. Zhou, W. Dou, W. Du, S. Ojo, H. Tran, S. A. Ghetmiri, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, Z. Chen, M. Mortazavi, and S.-Q. Yu, “Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si,” ACS Photonics 6(6), 1434–1441 (2019).
[Crossref]
J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, and S.-Q. Yu, “Si-Based GeSn Lasers with Wavelength Coverage of 827–833 µm and Operating Temperatures up to 180 K,” ACS Photonics 5(3), 827–833 (2018).
[Crossref]
S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]
J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, and S.-Q. Yu, “Si-Based GeSn Lasers with Wavelength Coverage of 827–833 µm and Operating Temperatures up to 180 K,” ACS Photonics 5(3), 827–833 (2018).
[Crossref]
S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]
H.-J. Joo, Y. Kim, D. Burt, Y. Jung, L. Zhang, M. Chen, S. J. Parluhutan, D.-H. Kang, C. Lee, S. Assali, Z. Ikonic, O. Moutanabbir, Y.-H. Cho, C. S. Tan, and D. Nam, “1D photonic crystal direct bandgap GeSn-on-insulator laser,” Appl. Phys. Lett. 119(20), 201101 (2021).
[Crossref]
L. Groell, A. Attiaoui, S. Assali, and O. Moutanabbir, “Combined Iodine- and Sulfur-Based Treatments for an Effective Passivation of GeSn Surface,” J. Phys. Chem. C 125(17), 9516–9525 (2021).
[Crossref]
S. Assali, M. Elsayed, J. Nicolas, M. O. Liedke, A. Wagner, M. Butterling, R. Krause-Rehberg, and O. Moutanabbir, “Vacancy complexes in nonequilibrium germanium-tin semiconductors,” Appl. Phys. Lett. 114(25), 251907 (2019).
[Crossref]
D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3(7), 1279–1285 (2016).
[Crossref]
S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]
D. Burt, H.-J. Joo, Y. Jung, Y. Kim, M. Chen, Y.-C. Huang, and D. Nam, “Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks,” Opt. Express 29(18), 28959–28967 (2021).
[Crossref]
H.-J. Joo, Y. Kim, D. Burt, Y. Jung, L. Zhang, M. Chen, S. J. Parluhutan, D.-H. Kang, C. Lee, S. Assali, Z. Ikonic, O. Moutanabbir, Y.-H. Cho, C. S. Tan, and D. Nam, “1D photonic crystal direct bandgap GeSn-on-insulator laser,” Appl. Phys. Lett. 119(20), 201101 (2021).
[Crossref]
S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]
S. Assali, M. Elsayed, J. Nicolas, M. O. Liedke, A. Wagner, M. Butterling, R. Krause-Rehberg, and O. Moutanabbir, “Vacancy complexes in nonequilibrium germanium-tin semiconductors,” Appl. Phys. Lett. 114(25), 251907 (2019).
[Crossref]
Y. Zhou, Y. Miao, S. Ojo, H. Tran, G. Abernathy, J. M. Grant, S. Amoah, G. Salamo, W. Du, J. Liu, J. Margetis, J. Tolle, Y. Zhang, G. Sun, R. A. Soref, B. Li, and S.-Q. Yu, “Electrically injected GeSn lasers on Si operating up to 100 K,” Optica 7(8), 924–928 (2020).
[Crossref]
Y. Zhou, W. Dou, W. Du, S. Ojo, H. Tran, S. A. Ghetmiri, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, Z. Chen, M. Mortazavi, and S.-Q. Yu, “Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si,” ACS Photonics 6(6), 1434–1441 (2019).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, and M. El Kurdi, “Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys,” Nat. Photonics 14(6), 375–382 (2020).
[Crossref]
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, and M. El Kurdi, “Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys,” Nat. Photonics 14(6), 375–382 (2020).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
J. M. Hartmann, A. M. Papon, V. Destefanis, and T. Billon, “Reduced pressure chemical vapor deposition of Ge thick layers on Si(001), Si(011) and Si(111),” J. Cryst. Growth 310(24), 5287–5296 (2008).
[Crossref]
H.-J. Joo, Y. Kim, D. Burt, Y. Jung, L. Zhang, M. Chen, S. J. Parluhutan, D.-H. Kang, C. Lee, S. Assali, Z. Ikonic, O. Moutanabbir, Y.-H. Cho, C. S. Tan, and D. Nam, “1D photonic crystal direct bandgap GeSn-on-insulator laser,” Appl. Phys. Lett. 119(20), 201101 (2021).
[Crossref]
B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “GeSnOI mid-infrared laser technology,” Light: Sci. Appl. 10(1), 232 (2021).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, and M. El Kurdi, “Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys,” Nat. Photonics 14(6), 375–382 (2020).
[Crossref]
B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “GeSnOI mid-infrared laser technology,” Light: Sci. Appl. 10(1), 232 (2021).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
J. Chrétien, N. Pauc, F. Armand Pilon, M. Bertrand, Q.-M. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J.-M. Hartmann, and V. Calvo, “GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain,” ACS Photonics 6(10), 2462–2469 (2019).
[Crossref]
W. Du, Q. M. Thai, J. Chrétien, M. Bertrand, L. Casiez, Y. Zhou, J. Margetis, N. Pauc, A. Chelnokov, V. Reboud, V. Calvo, J. Tolle, B. Li, and S.-Q. Yu, “Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures,” Front. Phys. 7, 147 (2019).
[Crossref]
Q. M. Thai, N. Pauc, J. Aubin, M. Bertrand, J. Chrétien, V. Delaye, A. Chelnokov, J.-M. Hartmann, V. Reboud, and V. Calvo, “GeSn heterostructure micro-disk laser operating at 230 K,” Opt. Express 26(25), 32500–32508 (2018).
[Crossref]
J. Aubin, J. M. Hartmann, A. Gassenq, L. Milord, N. Pauc, V. Reboud, and V. Calvo, “Impact of thickness on the structural properties of high tin content GeSn layers,” J. Cryst. Growth 473, 20–27 (2017).
[Crossref]
V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, and V. Calvo, “Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 µm up to 180 K,” Appl. Phys. Lett. 111(9), 092101 (2017).
[Crossref]
J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, and S.-Q. Yu, “Si-Based GeSn Lasers with Wavelength Coverage of 827–833 µm and Operating Temperatures up to 180 K,” ACS Photonics 5(3), 827–833 (2018).
[Crossref]
S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]
D. Stange, N. von den Driesch, D. Rainko, S. Roesgaard, I. Povstugar, J.-M. Hartmann, T. Stoica, Z. Ikonic, S. Mantl, D. Grützmacher, and D. Buca, “Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells,” Optica 4(2), 185–188 (2017).
[Crossref]
S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]
D. Rainko, Z. Ikonic, A. Elbaz, N. von den Driesch, D. Stange, E. Herth, P. Boucaud, M. El Kurdi, D. Grützmacher, and D. Buca, “Impact of tensile strain on low Sn content GeSn lasing,” Sci. Rep. 9(1), 259 (2019).
[Crossref]
D. Stange, N. von den Driesch, T. Zabel, F. Armand-Pilon, D. Rainko, B. Marzban, P. Zaumseil, J.-M. Hartmann, Z. Ikonic, G. Capellini, S. Mantl, H. Sigg, J. Witzens, D. Grützmacher, and D. Buca, “GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers,” ACS Photonics 5(11), 4628–4636 (2018).
[Crossref]
P. Zaumseil, Y. Hou, M. A. Schubert, N. von den Driesch, D. Stange, D. Rainko, M. Virgilio, D. Buca, and G. Capellini, “The thermal stability of epitaxial GeSn layers,” APL Materials 6, 076108 (2018).
[Crossref]
D. Stange, N. von den Driesch, D. Rainko, S. Roesgaard, I. Povstugar, J.-M. Hartmann, T. Stoica, Z. Ikonic, S. Mantl, D. Grützmacher, and D. Buca, “Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells,” Optica 4(2), 185–188 (2017).
[Crossref]
B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “GeSnOI mid-infrared laser technology,” Light: Sci. Appl. 10(1), 232 (2021).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
J. Chrétien, N. Pauc, F. Armand Pilon, M. Bertrand, Q.-M. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J.-M. Hartmann, and V. Calvo, “GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain,” ACS Photonics 6(10), 2462–2469 (2019).
[Crossref]
W. Du, Q. M. Thai, J. Chrétien, M. Bertrand, L. Casiez, Y. Zhou, J. Margetis, N. Pauc, A. Chelnokov, V. Reboud, V. Calvo, J. Tolle, B. Li, and S.-Q. Yu, “Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures,” Front. Phys. 7, 147 (2019).
[Crossref]
Q. M. Thai, N. Pauc, J. Aubin, M. Bertrand, J. Chrétien, V. Delaye, A. Chelnokov, J.-M. Hartmann, V. Reboud, and V. Calvo, “GeSn heterostructure micro-disk laser operating at 230 K,” Opt. Express 26(25), 32500–32508 (2018).
[Crossref]
J. Aubin, J. M. Hartmann, A. Gassenq, L. Milord, N. Pauc, V. Reboud, and V. Calvo, “Impact of thickness on the structural properties of high tin content GeSn layers,” J. Cryst. Growth 473, 20–27 (2017).
[Crossref]
V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, and V. Calvo, “Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 µm up to 180 K,” Appl. Phys. Lett. 111(9), 092101 (2017).
[Crossref]
D. Stange, N. von den Driesch, D. Rainko, S. Roesgaard, I. Povstugar, J.-M. Hartmann, T. Stoica, Z. Ikonic, S. Mantl, D. Grützmacher, and D. Buca, “Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells,” Optica 4(2), 185–188 (2017).
[Crossref]
V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, and V. Calvo, “Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 µm up to 180 K,” Appl. Phys. Lett. 111(9), 092101 (2017).
[Crossref]
V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, and V. Calvo, “Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 µm up to 180 K,” Appl. Phys. Lett. 111(9), 092101 (2017).
[Crossref]
I. Rousseau, G. Callsen, G. Jacopin, J.-F. Carlin, R. Butté, and N. Grandjean, “Optical absorption and oxygen passivation of surface states in III-nitride photonic devices,” J. Appl. Phys. 123(11), 113103 (2018).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, and M. El Kurdi, “Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys,” Nat. Photonics 14(6), 375–382 (2020).
[Crossref]
A. Elbaz, M. El Kurdi, A. Aassime, S. Sauvage, X. Checoury, I. Sagnes, F. Boeuf, and P. Boucaud, “Solving thermal issues in tensile-strained Ge microdisks,” Opt. Express 26(22), 28376–28384 (2018).
[Crossref]
B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “GeSnOI mid-infrared laser technology,” Light: Sci. Appl. 10(1), 232 (2021).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
Y. Zhou, Y. Miao, S. Ojo, H. Tran, G. Abernathy, J. M. Grant, S. Amoah, G. Salamo, W. Du, J. Liu, J. Margetis, J. Tolle, Y. Zhang, G. Sun, R. A. Soref, B. Li, and S.-Q. Yu, “Electrically injected GeSn lasers on Si operating up to 100 K,” Optica 7(8), 924–928 (2020).
[Crossref]
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, and M. El Kurdi, “Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys,” Nat. Photonics 14(6), 375–382 (2020).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
A. Elbaz, M. El Kurdi, A. Aassime, S. Sauvage, X. Checoury, I. Sagnes, F. Boeuf, and P. Boucaud, “Solving thermal issues in tensile-strained Ge microdisks,” Opt. Express 26(22), 28376–28384 (2018).
[Crossref]
P. Zaumseil, Y. Hou, M. A. Schubert, N. von den Driesch, D. Stange, D. Rainko, M. Virgilio, D. Buca, and G. Capellini, “The thermal stability of epitaxial GeSn layers,” APL Materials 6, 076108 (2018).
[Crossref]
D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3(7), 1279–1285 (2016).
[Crossref]
J. Chrétien, N. Pauc, F. Armand Pilon, M. Bertrand, Q.-M. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J.-M. Hartmann, and V. Calvo, “GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain,” ACS Photonics 6(10), 2462–2469 (2019).
[Crossref]
D. Stange, N. von den Driesch, T. Zabel, F. Armand-Pilon, D. Rainko, B. Marzban, P. Zaumseil, J.-M. Hartmann, Z. Ikonic, G. Capellini, S. Mantl, H. Sigg, J. Witzens, D. Grützmacher, and D. Buca, “GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers,” ACS Photonics 5(11), 4628–4636 (2018).
[Crossref]
V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, and V. Calvo, “Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 µm up to 180 K,” Appl. Phys. Lett. 111(9), 092101 (2017).
[Crossref]
D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3(7), 1279–1285 (2016).
[Crossref]
S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]
Y. Zhou, W. Dou, W. Du, S. Ojo, H. Tran, S. A. Ghetmiri, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, Z. Chen, M. Mortazavi, and S.-Q. Yu, “Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si,” ACS Photonics 6(6), 1434–1441 (2019).
[Crossref]
J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, and S.-Q. Yu, “Si-Based GeSn Lasers with Wavelength Coverage of 827–833 µm and Operating Temperatures up to 180 K,” ACS Photonics 5(3), 827–833 (2018).
[Crossref]
Y. Zhou, Y. Miao, S. Ojo, H. Tran, G. Abernathy, J. M. Grant, S. Amoah, G. Salamo, W. Du, J. Liu, J. Margetis, J. Tolle, Y. Zhang, G. Sun, R. A. Soref, B. Li, and S.-Q. Yu, “Electrically injected GeSn lasers on Si operating up to 100 K,” Optica 7(8), 924–928 (2020).
[Crossref]
S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]
D. Rainko, Z. Ikonic, A. Elbaz, N. von den Driesch, D. Stange, E. Herth, P. Boucaud, M. El Kurdi, D. Grützmacher, and D. Buca, “Impact of tensile strain on low Sn content GeSn lasing,” Sci. Rep. 9(1), 259 (2019).
[Crossref]
D. Stange, N. von den Driesch, T. Zabel, F. Armand-Pilon, D. Rainko, B. Marzban, P. Zaumseil, J.-M. Hartmann, Z. Ikonic, G. Capellini, S. Mantl, H. Sigg, J. Witzens, D. Grützmacher, and D. Buca, “GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers,” ACS Photonics 5(11), 4628–4636 (2018).
[Crossref]
P. Zaumseil, Y. Hou, M. A. Schubert, N. von den Driesch, D. Stange, D. Rainko, M. Virgilio, D. Buca, and G. Capellini, “The thermal stability of epitaxial GeSn layers,” APL Materials 6, 076108 (2018).
[Crossref]
D. Stange, N. von den Driesch, D. Rainko, S. Roesgaard, I. Povstugar, J.-M. Hartmann, T. Stoica, Z. Ikonic, S. Mantl, D. Grützmacher, and D. Buca, “Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells,” Optica 4(2), 185–188 (2017).
[Crossref]
D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3(7), 1279–1285 (2016).
[Crossref]
D. Stange, N. von den Driesch, D. Rainko, S. Roesgaard, I. Povstugar, J.-M. Hartmann, T. Stoica, Z. Ikonic, S. Mantl, D. Grützmacher, and D. Buca, “Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells,” Optica 4(2), 185–188 (2017).
[Crossref]
D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3(7), 1279–1285 (2016).
[Crossref]
S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]
Y. Zhou, Y. Miao, S. Ojo, H. Tran, G. Abernathy, J. M. Grant, S. Amoah, G. Salamo, W. Du, J. Liu, J. Margetis, J. Tolle, Y. Zhang, G. Sun, R. A. Soref, B. Li, and S.-Q. Yu, “Electrically injected GeSn lasers on Si operating up to 100 K,” Optica 7(8), 924–928 (2020).
[Crossref]
Y. Zhou, W. Dou, W. Du, S. Ojo, H. Tran, S. A. Ghetmiri, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, Z. Chen, M. Mortazavi, and S.-Q. Yu, “Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si,” ACS Photonics 6(6), 1434–1441 (2019).
[Crossref]
J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, and S.-Q. Yu, “Si-Based GeSn Lasers with Wavelength Coverage of 827–833 µm and Operating Temperatures up to 180 K,” ACS Photonics 5(3), 827–833 (2018).
[Crossref]
S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]
H.-J. Joo, Y. Kim, D. Burt, Y. Jung, L. Zhang, M. Chen, S. J. Parluhutan, D.-H. Kang, C. Lee, S. Assali, Z. Ikonic, O. Moutanabbir, Y.-H. Cho, C. S. Tan, and D. Nam, “1D photonic crystal direct bandgap GeSn-on-insulator laser,” Appl. Phys. Lett. 119(20), 201101 (2021).
[Crossref]
W. Du, Q. M. Thai, J. Chrétien, M. Bertrand, L. Casiez, Y. Zhou, J. Margetis, N. Pauc, A. Chelnokov, V. Reboud, V. Calvo, J. Tolle, B. Li, and S.-Q. Yu, “Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures,” Front. Phys. 7, 147 (2019).
[Crossref]
Q. M. Thai, N. Pauc, J. Aubin, M. Bertrand, J. Chrétien, V. Delaye, A. Chelnokov, J.-M. Hartmann, V. Reboud, and V. Calvo, “GeSn heterostructure micro-disk laser operating at 230 K,” Opt. Express 26(25), 32500–32508 (2018).
[Crossref]
V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, and V. Calvo, “Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 µm up to 180 K,” Appl. Phys. Lett. 111(9), 092101 (2017).
[Crossref]
J. Chrétien, N. Pauc, F. Armand Pilon, M. Bertrand, Q.-M. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J.-M. Hartmann, and V. Calvo, “GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain,” ACS Photonics 6(10), 2462–2469 (2019).
[Crossref]
Y. Zhou, Y. Miao, S. Ojo, H. Tran, G. Abernathy, J. M. Grant, S. Amoah, G. Salamo, W. Du, J. Liu, J. Margetis, J. Tolle, Y. Zhang, G. Sun, R. A. Soref, B. Li, and S.-Q. Yu, “Electrically injected GeSn lasers on Si operating up to 100 K,” Optica 7(8), 924–928 (2020).
[Crossref]
Y. Zhou, W. Dou, W. Du, S. Ojo, H. Tran, S. A. Ghetmiri, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, Z. Chen, M. Mortazavi, and S.-Q. Yu, “Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si,” ACS Photonics 6(6), 1434–1441 (2019).
[Crossref]
W. Du, Q. M. Thai, J. Chrétien, M. Bertrand, L. Casiez, Y. Zhou, J. Margetis, N. Pauc, A. Chelnokov, V. Reboud, V. Calvo, J. Tolle, B. Li, and S.-Q. Yu, “Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures,” Front. Phys. 7, 147 (2019).
[Crossref]
J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, and S.-Q. Yu, “Si-Based GeSn Lasers with Wavelength Coverage of 827–833 µm and Operating Temperatures up to 180 K,” ACS Photonics 5(3), 827–833 (2018).
[Crossref]
S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]
Y. Zhou, Y. Miao, S. Ojo, H. Tran, G. Abernathy, J. M. Grant, S. Amoah, G. Salamo, W. Du, J. Liu, J. Margetis, J. Tolle, Y. Zhang, G. Sun, R. A. Soref, B. Li, and S.-Q. Yu, “Electrically injected GeSn lasers on Si operating up to 100 K,” Optica 7(8), 924–928 (2020).
[Crossref]
Y. Zhou, W. Dou, W. Du, S. Ojo, H. Tran, S. A. Ghetmiri, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, Z. Chen, M. Mortazavi, and S.-Q. Yu, “Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si,” ACS Photonics 6(6), 1434–1441 (2019).
[Crossref]
P. Zaumseil, Y. Hou, M. A. Schubert, N. von den Driesch, D. Stange, D. Rainko, M. Virgilio, D. Buca, and G. Capellini, “The thermal stability of epitaxial GeSn layers,” APL Materials 6, 076108 (2018).
[Crossref]
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, and M. El Kurdi, “Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys,” Nat. Photonics 14(6), 375–382 (2020).
[Crossref]
D. Rainko, Z. Ikonic, A. Elbaz, N. von den Driesch, D. Stange, E. Herth, P. Boucaud, M. El Kurdi, D. Grützmacher, and D. Buca, “Impact of tensile strain on low Sn content GeSn lasing,” Sci. Rep. 9(1), 259 (2019).
[Crossref]
P. Zaumseil, Y. Hou, M. A. Schubert, N. von den Driesch, D. Stange, D. Rainko, M. Virgilio, D. Buca, and G. Capellini, “The thermal stability of epitaxial GeSn layers,” APL Materials 6, 076108 (2018).
[Crossref]
D. Stange, N. von den Driesch, T. Zabel, F. Armand-Pilon, D. Rainko, B. Marzban, P. Zaumseil, J.-M. Hartmann, Z. Ikonic, G. Capellini, S. Mantl, H. Sigg, J. Witzens, D. Grützmacher, and D. Buca, “GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers,” ACS Photonics 5(11), 4628–4636 (2018).
[Crossref]
D. Stange, N. von den Driesch, D. Rainko, S. Roesgaard, I. Povstugar, J.-M. Hartmann, T. Stoica, Z. Ikonic, S. Mantl, D. Grützmacher, and D. Buca, “Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells,” Optica 4(2), 185–188 (2017).
[Crossref]
D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3(7), 1279–1285 (2016).
[Crossref]
S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]
S. Assali, M. Elsayed, J. Nicolas, M. O. Liedke, A. Wagner, M. Butterling, R. Krause-Rehberg, and O. Moutanabbir, “Vacancy complexes in nonequilibrium germanium-tin semiconductors,” Appl. Phys. Lett. 114(25), 251907 (2019).
[Crossref]
B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “GeSnOI mid-infrared laser technology,” Light: Sci. Appl. 10(1), 232 (2021).
[Crossref]
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.-M. Hartmann, and M. El Kurdi, “Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region,” ACS Photonics 7(10), 2713–2722 (2020).
[Crossref]
D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3(7), 1279–1285 (2016).
[Crossref]
S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]
D. Stange, N. von den Driesch, T. Zabel, F. Armand-Pilon, D. Rainko, B. Marzban, P. Zaumseil, J.-M. Hartmann, Z. Ikonic, G. Capellini, S. Mantl, H. Sigg, J. Witzens, D. Grützmacher, and D. Buca, “GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers,” ACS Photonics 5(11), 4628–4636 (2018).
[Crossref]
D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3(7), 1279–1285 (2016).
[Crossref]
Y. Zhou, Y. Miao, S. Ojo, H. Tran, G. Abernathy, J. M. Grant, S. Amoah, G. Salamo, W. Du, J. Liu, J. Margetis, J. Tolle, Y. Zhang, G. Sun, R. A. Soref, B. Li, and S.-Q. Yu, “Electrically injected GeSn lasers on Si operating up to 100 K,” Optica 7(8), 924–928 (2020).
[Crossref]
Y. Zhou, W. Dou, W. Du, S. Ojo, H. Tran, S. A. Ghetmiri, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, Z. Chen, M. Mortazavi, and S.-Q. Yu, “Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si,” ACS Photonics 6(6), 1434–1441 (2019).
[Crossref]
W. Du, Q. M. Thai, J. Chrétien, M. Bertrand, L. Casiez, Y. Zhou, J. Margetis, N. Pauc, A. Chelnokov, V. Reboud, V. Calvo, J. Tolle, B. Li, and S.-Q. Yu, “Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures,” Front. Phys. 7, 147 (2019).
[Crossref]
J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, and S.-Q. Yu, “Si-Based GeSn Lasers with Wavelength Coverage of 827–833 µm and Operating Temperatures up to 180 K,” ACS Photonics 5(3), 827–833 (2018).
[Crossref]
S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]
D. Stange, N. von den Driesch, T. Zabel, F. Armand-Pilon, D. Rainko, B. Marzban, P. Zaumseil, J.-M. Hartmann, Z. Ikonic, G. Capellini, S. Mantl, H. Sigg, J. Witzens, D. Grützmacher, and D. Buca, “GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers,” ACS Photonics 5(11), 4628–4636 (2018).
[Crossref]
V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, and V. Calvo, “Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 µm up to 180 K,” Appl. Phys. Lett. 111(9), 092101 (2017).
[Crossref]
D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3(7), 1279–1285 (2016).
[Crossref]
D. Stange, N. von den Driesch, T. Zabel, F. Armand-Pilon, D. Rainko, B. Marzban, P. Zaumseil, J.-M. Hartmann, Z. Ikonic, G. Capellini, S. Mantl, H. Sigg, J. Witzens, D. Grützmacher, and D. Buca, “GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers,” ACS Photonics 5(11), 4628–4636 (2018).
[Crossref]
P. Zaumseil, Y. Hou, M. A. Schubert, N. von den Driesch, D. Stange, D. Rainko, M. Virgilio, D. Buca, and G. Capellini, “The thermal stability of epitaxial GeSn layers,” APL Materials 6, 076108 (2018).
[Crossref]
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, and M. El Kurdi, “Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys,” Nat. Photonics 14(6), 375–382 (2020).
[Crossref]
H.-J. Joo, Y. Kim, D. Burt, Y. Jung, L. Zhang, M. Chen, S. J. Parluhutan, D.-H. Kang, C. Lee, S. Assali, Z. Ikonic, O. Moutanabbir, Y.-H. Cho, C. S. Tan, and D. Nam, “1D photonic crystal direct bandgap GeSn-on-insulator laser,” Appl. Phys. Lett. 119(20), 201101 (2021).
[Crossref]
Y. Zhou, Y. Miao, S. Ojo, H. Tran, G. Abernathy, J. M. Grant, S. Amoah, G. Salamo, W. Du, J. Liu, J. Margetis, J. Tolle, Y. Zhang, G. Sun, R. A. Soref, B. Li, and S.-Q. Yu, “Electrically injected GeSn lasers on Si operating up to 100 K,” Optica 7(8), 924–928 (2020).
[Crossref]
Y. Zhou, Y. Miao, S. Ojo, H. Tran, G. Abernathy, J. M. Grant, S. Amoah, G. Salamo, W. Du, J. Liu, J. Margetis, J. Tolle, Y. Zhang, G. Sun, R. A. Soref, B. Li, and S.-Q. Yu, “Electrically injected GeSn lasers on Si operating up to 100 K,” Optica 7(8), 924–928 (2020).
[Crossref]
Y. Zhou, W. Dou, W. Du, S. Ojo, H. Tran, S. A. Ghetmiri, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, Z. Chen, M. Mortazavi, and S.-Q. Yu, “Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si,” ACS Photonics 6(6), 1434–1441 (2019).
[Crossref]
W. Du, Q. M. Thai, J. Chrétien, M. Bertrand, L. Casiez, Y. Zhou, J. Margetis, N. Pauc, A. Chelnokov, V. Reboud, V. Calvo, J. Tolle, B. Li, and S.-Q. Yu, “Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures,” Front. Phys. 7, 147 (2019).
[Crossref]
J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, and S.-Q. Yu, “Si-Based GeSn Lasers with Wavelength Coverage of 827–833 µm and Operating Temperatures up to 180 K,” ACS Photonics 5(3), 827–833 (2018).
[Crossref]
S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]