2 October 2006, Volume 14, Issue 20, pp. 8900-9550
73 articles
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An infrared image taken from one of the polished facets showing seven c.w. silicon evanescent lasers operating simultaneously. Authors report an electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding. [See Fang et al. Fig. 5 for details.]
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