Abstract

Tunable UV radiation near 215 nm was produced by frequency quadrupling the 860-nm emission of a mode-locked external-cavity compound semiconductor laser containing a tapered GaAlAs amplifier. A KNbO₃ crystal generated the 430-nm second harmonic, which was doubled by a β-BaB₂O₄ crystal, producing tunable UV radiation with as much as 15 μW of average power.

© 1995 Optical Society of America

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