Abstract

We have applied the large photovoltage developed across a layer of selectively deposited bacteriorhodopsin to the gate terminal of a monolithically integrated GaAs-based modulation-doped field-effect transistor, which delivers an amplified photoinduced current signal. The integrated biophotoreceiver device exhibits a responsivity of 3.8 A/W. The optoelectronic integrated circuit is achieved by molecular-beam epitaxy of the field-effect transistor’s heterostructure, photolithography, and selective-area bacteriorhodopsin electrodeposition.

© 2002 Optical Society of America

Monolithically integrated bacteriorhodopsin–GaAs/GaAlAs phototransceiver

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Bacteriorhodopsin modules for data processing with incoherent light

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High gain optical detection with GaAs field effect transistors

R. I. MacDonald
Appl. Opt. 20(4) 591-594 (1981)