Abstract
Hybrid Si/III–V, Fabry–Perot evanescent lasers are demonstrated, utilizing InGaAsP as the III–V gain material for the first time to our knowledge. The lasing threshold current of -long devices was as low as , with a maximal single facet output power of at . Longer devices achieved a maximal single facet output power as high as , a single facet slope efficiency of 8.4%, and a lasing threshold current density of . Continuous wave laser operation was obtained up to . The threshold current density, output power, and efficiency obtained improve upon those of previously reported devices having a similar geometry. Facet images indicate that the output light is largely confined to the Si waveguide.
© 2009 Optical Society of America
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