Abstract

Laser diodes with highly strained InGaAs quantum wells, emitting at $1130\mathrm{nm}$, embedded in a GaAs waveguide were investigated. This Letter reviews the design of the vertical structure for enclosing high output power in angles smaller than 18°. Example designs were processed to $200\mu \mathrm{m}$ stripe-width lasers with an $8\text{-}\mathrm{mm}\text{-}\mathrm{l}\mathrm{o}\mathrm{n}\mathrm{g}$ optical cavity. When these are mounted on C mounts, they give an output power of $38\mathrm{W}$ under quasi-cw operation from a single emitter.

© 2008 Optical Society of America

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