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Ultrafast visible-infrared photodetector based on the SnSe2/Bi2Se3 heterostructure

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Abstract

Using the inherent properties of a heterostructure, ultrafast photodetectors with high sensitivity can be progressively developed that have the potential to carve a niche among the optoelectronic devices. In this Letter, a heterojunction photodetector based on SnSe2/Bi2Se3 is constructed, and a visible–infrared photoresponse with good sensitivity at room temperature is obtained. The SnSe2/Bi2Se3 photodetector demonstrates a high Iph/Id ratio of 1.2 × 104 at 0 V. Moreover, the high responsivity of 2.3 A/W, detectivity of 1.6 × 1011 Jones, and fast response time of 40 µs are simultaneously achieved. The presented results offer an alternative route for ultrafast photodetectors with high sensitivity.

© 2022 Optica Publishing Group

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Supplementary Material (1)

NameDescription
Supplement 1       Current-voltage characteristics of the SnSe2 and the Bi2Se3 devices.

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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