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Method for measuring the trench depth of a very-large-scale-integration dynamic random-access memory capacitor based on a Michelson interferometer

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Abstract

A simple method is proposed to measure precisely the trench depth of very-large-scale-integration, dynamic random-access memory capacitor cells., The measurement system is based on a Michelson interferometer using a silicon wafer with trenches as one of the two reflecting mirrors. Measurements of the trench depth can be made within 0.2-μm error.

© 1986 Optical Society of America

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