Abstract
The influence of dielectric coatings on the photoresponsivity of metal–insulator–semiconductor structures on holographic submicrometer sinusoidal grating structures is investigated. Narrow-band photodetectors are realized based on the excitation of transverse electric modes and surface plasmon polaritons in the vacuum–MgF2–Al or vacuum–SiO2–Al layer system on Si substrates. These detectors are sensitive to either s- or p-polarized light. Quantum efficiencies up to 20% and a linewidth of 18 mm were achieved with transverse electric modes at a wavelength λ = 325 nm. The resonances are tunable from the ultraviolet into the visible regime by variation of the dielectric film thickness.
© 1987 Optical Society of America
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