Abstract

We report on the influence of selective excitation on the laser emission of YAlO₃:Er at 2.73, 2.79, and 2.92 μm. Selective excitation is done by filtering the pump light of a Xe flash lamp. This leads to a reduction of the thermal load on the crystal and laser threshold, allowing repetition rates up to 125 Hz.

© 1988 Optical Society of America

Five new 3-μm laser lines in YAlO₃:Er

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Microwave-discharge excitation of an ArXe laser

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Influence of direct and cross-relaxation pumping processes on the output energy and thermal load of an Er:YAG laser

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