Abstract
A GaAs/AlGaAs optical synaptic interconnection device for neural networks is reported for the first time to our knowledge. This device consists of a light-emitting-diode array, an interconnection matrix, and a photodiode array, which are integrated into a hybrid-layered structure on a GaAs substrate. The device structure and characteristics are reported in detail. The fabricated device can simulate a 32-neuron system. Experimental results of the Hopfield associative memory with three stored vectors are also described.
© 1989 Optical Society of America
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