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All-optical switching in a nonlinear GaAlAs X junction

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Abstract

We demonstrate femtosecond all-optical switching in both symmetric and asymmetric nonlinear X junctions, fabricated in AlGaAs channel waveguides at 1555 nm with photon energies below one half the semiconductor band gap. The switching is a consequence of optically induced symmetry breaking within the junction.

© 1993 Optical Society of America

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