Abstract

Coherent summation of the output of two saturated traveling-wave amplifiers, each injected from a common semiconductor laser and all operated cw, has resulted in a single diffraction-limited beam containing 93% of the power originally contained in the two individual amplified beams. The 372 mW of power in a single diffraction-limited lobe is a 1.5-fold enhancement over the power available from a single amplifier.

© 1993 Optical Society of America

Coherent summation of injection-locked, diode-pumped Nd:YAG ring lasers

J. Harrison, G. A. Rines, P. F. Moulton, and J. R. Leger
Opt. Lett. 13(2) 111-113 (1988)

High-brightness output from a laser-diode array coupled to a phase-conjugating mirror

Stuart MacCormack and Jack Feinberg
Opt. Lett. 18(3) 211-213 (1993)

Difference-frequency mixing in AgGaS₂ by use of a high-power GaAlAs tapered semiconductor amplifier at 860 nm

Ulrich Simon, Frank K. Tittel, and Lew Goldberg
Opt. Lett. 18(22) 1931-1933 (1993)

High-power and high-spatial-coherence broad-area power amplifier

John R. Andrews and Gregory L. Schuster
Opt. Lett. 16(12) 913-915 (1991)

Mode locking of a broad-area semiconductor laser with a multiple-quantum-well saturable absorber

L. E. Adams, E. S. Kintzer, M. Ramaswamy, J. G. Fujimoto, U. Keller, and M. T. Asom
Opt. Lett. 18(22) 1940-1942 (1993)