Abstract

We report our results from the study of the dynamics of electron-trapping materials (ETM’s) under simultaneous illumination of pulsed blue light and constant IR light. By combining the dynamic property of ETM with the S-shaped nonlinear I–V characteristic of a programmable unijunction transistor, we produce an optoelectronic pulsating neuron. A proof-of-concept experiment successfully produces oscillations and demonstrates the great potential of using ETM’s to implement dense arrays of pulsating neurons.

© 1994 Optical Society of America

Electron-trapping materials and electron-beam-addressed electron-trapping material devices: an improved model

Z. Wen and N. H. Farhat
Appl. Opt. 34(23) 5188-5198 (1995)

Dynamics of electron-trapping materials for use in optoelectronic neurocomputing

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