Abstract

We describe the efficient operation of a Nd:KGd(WO₄)₂ laser at 1.067 μm pumped by Ti:sapphire and diode lasers. Preliminary data indicate a relatively low threshold and high efficiency for a 10 mm diameter × 10 mm long antireflection-coated crystal. The wide high-absorption band was centered near 810 nm. The fluorescence lifetime was 109 μs, and the stimulated-emission cross section was approximately 3.5 × 10⁻¹⁹ cm². Slope efficiencies of 43% and 44% were attained for diode laser and Ti:sapphire pump sources, respectively.

© 1995 Optical Society of America

Efficient laser operation of diode-pumped Nd:KGd(WO₄)₂ crystal at 1.067 μm

Youming Chen, Lawrence Major, and Vikram Kushawaha
Appl. Opt. 35(18) 3203-3206 (1996)

Continuous-wave Raman generation in a diode-pumped Nd³⁺:KGd(WO₄)₂ laser

A. A. Demidovich, A. S. Grabtchikov, V. A. Lisinetskii, V. N. Burakevich, V. A. Orlovich, and W. Kiefer
Opt. Lett. 30(13) 1701-1703 (2005)

Diode-pumped passively mode-locked Nd:KGd(WO₄)₂ laser with 1-W average output power

A. Major, N. Langford, T. Graf, D. Burns, and A. I. Ferguson
Opt. Lett. 27(16) 1478-1480 (2002)

Single-mode 1.34-μm Nd:YVO₄ microchip laser with cw Ti:sapphire and diode-laser pumping

G. C. Bowkett, G. W. Baxter, D. J. Booth, T. Taira, H. Teranishi, and T. Kobayashi
Opt. Lett. 19(13) 957-959 (1994)

Pulsed laser operation of Yb-doped KY(WO₄)₂ and KGd(WO₄)₂

N. V. Kuleshov, A. A. Lagatsky, A. V. Podlipensky, V. P. Mikhailov, and G. Huber
Opt. Lett. 22(17) 1317-1319 (1997)