Abstract

We produced ultraviolet radiation by frequency tripling the mode-locked emission of an external cavity laser containing a tapered GaAlAs amplifier gain element. The 429-nm second harmonic produced by a KNbO₃ crystal was sum-frequency mixed with the 858-nm fundamental in a Li₃BO₅ crystal, generating as much as 50 μW of power at 286 nm.

© 1995 Optical Society of America

Deep-UV generation by frequency quadrupling of a high-power GaAlAs semiconductor laser

Lew Goldberg and Dahv A. V. Kliner
Opt. Lett. 20(10) 1145-1147 (1995)

High-power 467-nm passively locked signal-resonant sum-frequency laser

P. G. Wigley, Q. Zhang, E. Miesak, and G. J. Dixon
Opt. Lett. 20(24) 2496-2498 (1995)

Temperature-insensitive frequency tripling for generating high-average power UV lasers

Haizhe Zhong, Peng Yuan, Shuangchun Wen, and Liejia Qian
Opt. Express 22(4) 4267-4276 (2014)

Generation of 16-fs pulses at 425 nm by extracavity frequency doubling of a mode-locked Ti:sapphire laser

S. H. Ashworth, M. Joschko, M. Woerner, E. Riedle, and T. Elsaesser
Opt. Lett. 20(20) 2120-2122 (1995)

Difference-frequency mixing in AgGaS₂ by use of a high-power GaAlAs tapered semiconductor amplifier at 860 nm

Ulrich Simon, Frank K. Tittel, and Lew Goldberg
Opt. Lett. 18(22) 1931-1933 (1993)