Abstract

We demonstrate a passively $Q$-switched diode-pumped 1.34-$\mathit{\mu }\mathrm{m}$ Nd:YVO₄ microchip laser. We achieved single-frequency, 230-ps pulses by using an InGaAsP semiconductor saturable-absorber mirror. We can vary the pulse width and the repetition rate from 230 ps to 12 ns and from 30 kHz to 4 MHz, respectively, by changing the design parameters of the saturable absorber, the thickness of the crystal, and the pump power.

© 1997 Optical Society of America

56-ps passively Q-switched diode-pumped microchip laser

B. Braun, F. X. Kärtner, G. Zhang, M. Moser, and U. Keller
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InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-µm lasers

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Experimentally confirmed design guidelines for passively Q-switched microchip lasers using semiconductor saturable absorbers

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J. Opt. Soc. Am. B 16(3) 376-388 (1999)

Passively Q-switched microchip laser at 1.5 µm

R. Häring, R. Paschotta, R. Fluck, E. Gini, H. Melchior, and U. Keller
J. Opt. Soc. Am. B 18(12) 1805-1812 (2001)

High-power diode-pumped Q-switched and mode-locked Nd:YVO₄ laser with a Cr⁴⁺:YAG saturable absorber

Yung-Fu Chen, S. W. Tsai, and S. C. Wang
Opt. Lett. 25(19) 1442-1444 (2000)