Abstract
We have applied the large photovoltage developed across a layer of selectively deposited bacteriorhodopsin to the gate terminal of a monolithically integrated GaAs-based modulation-doped field-effect transistor, which delivers an amplified photoinduced current signal. The integrated biophotoreceiver device exhibits a responsivity of 3.8 A/W. The optoelectronic integrated circuit is achieved by molecular-beam epitaxy of the field-effect transistor’s heterostructure, photolithography, and selective-area bacteriorhodopsin electrodeposition.
© 2002 Optical Society of America
Full Article | PDF ArticleMore Like This
Jonghyun Shin, Pallab Bhattacharya, Jian Xu, and György Váró
Opt. Lett. 29(19) 2264-2266 (2004)
Jonghyun Shin, Pallab Bhattacharya, Hao-Chih Yuan, Zhenqiang Ma, and György Váró
Opt. Lett. 32(5) 500-502 (2007)
Jonghyun Shin, Pallab Bhattacharya, Jian Xu, and György Váró
Opt. Lett. 30(3) 335-335 (2005)