Abstract
A new, efficient, intracavity scheme for terahertz generation in femtosecond mode-locked Ti:sapphire lasers is proposed and demonstrated. The terahertz radiation is generated by a transient photocurrent in a GaAs layer grown on a fast semiconductor saturable absorber mirror. The average terahertz output radiation power is voltage controlled and can be electrically modulated at frequencies up to 100 kHz.
© 2002 Optical Society of America
Full Article | PDF ArticleMore Like This
I. D. Jung, F. X. Kärtner, N. Matuschek, D. H. Sutter, F. Morier-Genoud, G. Zhang, U. Keller, V. Scheuer, M. Tilsch, and T. Tschudi
Opt. Lett. 22(13) 1009-1011 (1997)
H. D. Sun, G. J. Valentine, R. Macaluso, S. Calvez, D. Burns, M. D. Dawson, T. Jouhti, and M. Pessa
Opt. Lett. 27(23) 2124-2126 (2002)
A. K. Mohamed, A. Mustellier, J.-P. Faleni, and E. Rosencher
Opt. Lett. 27(16) 1457-1459 (2002)