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Voltage-controlled intracavity terahertz generator for self-starting Ti:sapphire lasers

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Abstract

A new, efficient, intracavity scheme for terahertz generation in femtosecond mode-locked Ti:sapphire lasers is proposed and demonstrated. The terahertz radiation is generated by a transient photocurrent in a GaAs layer grown on a fast semiconductor saturable absorber mirror. The average terahertz output radiation power is voltage controlled and can be electrically modulated at frequencies up to 100 kHz.

© 2002 Optical Society of America

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