Abstract

We present the angular-resolved intensity noise characteristics of a resonant-cavity light-emitting diode under quiet pumping conditions. Measurements by a sensitivity-enhanced lock-in amplifier detection scheme yielded a spatial anticorrelation between the intensity noise of the central and peripheral parts of the emitted far field. Proposals for possible explanations of this anticorrelation from a semiconductor emitter point of view and its consequences for applications in quantum optical imaging are discussed.

© 2003 Optical Society of America

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