Abstract

We study noise transfer from pump to signal in silicon Raman amplifiers, with particular emphasis on the regimes of strong cumulative free-carrier absorption and heavy pump depletion. We calculate the relative intensity noise (RIN) transfers in copumped and counterpumped amplifiers and provide intuitive explanations for RIN peculiarities. We show that noise transfer at low frequencies may be suppressed by carefully choosing the pump intensity, effective free-carrier lifetime, or amplifier length, but only at the expense of a rise in noise at high frequencies.

© 2010 Optical Society of America

Analytical study of pulse amplification in silicon Raman amplifiers

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