Abstract
Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.
© 2010 Optical Society of America
Full Article | PDF ArticleMore Like This
C. Baratto, R. Kumar, E. Comini, G. Faglia, and G. Sberveglieri
Opt. Express 23(15) 18937-18942 (2015)
Yumei Wang, Yibo Han, Junbo Han, Xianghui Zhang, Ying Chen, Siliang Wang, Li Wen, Nishuang Liu, Jun Su, Luying Li, and Yihua Gao
Opt. Express 24(4) 3940-3949 (2016)
Yong-Seok Choi, Jang-Won Kang, Byeong-Hyeok Kim, Dong-Keun Na, Sang-Jun Lee, and Seong-Ju Park
Opt. Express 21(10) 11698-11704 (2013)