Abstract

We report on a passively mode-locked InP/InGaAsP multiple quantum well semiconductor ring laser that operates at a $20\mathrm{GHz}$ repetition rate and around $1575\mathrm{nm}$ wavelength. The device has been realized using the active–passive integration technology in a standardized photonic integration platform. We demonstrate experimentally for the first time to our knowledge that the relative positioning of the amplifier and absorber in a monolithically integrated ring laser can be used to control the balance of power between counterpropagating fields in the mode-locked state. The directional power balance is verified to be in agreement with a model previously reported.

© 2011 Optical Society of America

Photonic integrated circuit extended cavity passively mode-locked dual absorber symmetric ring laser

Mu-Chieh Lo, Dominik Auth, Christoph Weber, Patrick Fiala, Pascal Sauer, Guillermo Carpintero, and Stefan Breuer
Opt. Lett. 44(14) 3566-3569 (2019)

Monolithically integrated 2.5 GHz extended cavity mode-locked ring laser with intracavity phase modulators

Sylwester Latkowski, Valentina Moskalenko, Saeed Tahvili, Luc Augustin, Meint Smit, Kevin Williams, and Erwin Bente
Opt. Lett. 40(1) 77-80 (2015)

1  GHz InP on-chip monolithic extended cavity colliding-pulse mode-locked laser

R. Guzmán, C. Gordon, L. Orbe, and G. Carpintero
Opt. Lett. 42(12) 2318-2321 (2017)

490 fs pulse generation from a passive C-band AlGaInAs/InP quantum well mode-locked laser

Lianping Hou, Mohsin Haji, John H. Marsh, and A. Catrina Bryce
Opt. Lett. 37(5) 773-775 (2012)

Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasers

Lianping Hou, Mohsin Haji, Jehan Akbar, Bocang Qiu, and A. Catrina Bryce
Opt. Lett. 36(6) 966-968 (2011)