Abstract

We present an experimental investigation of a multicontact semiconductor optical amplifier. This first-generation device allows for direct control of the carrier density profile along the length of the waveguide. This is used to control the device noise figure, with a minimum value of $5\mathrm{dB}$ observed at a gain of $15\mathrm{dB}$ for an optimum carrier density profile. The opposite carrier density profile results in an increase of the power saturation by $3\mathrm{dB}$.

© 2011 Optical Society of America

Method to improve the noise figure and saturation power in multi-contact semiconductor optical amplifiers: simulation and experiment

Kevin Carney, Robert Lennox, Ramon Maldonado-Basilio, Severine Philippe, Frederic Surre, Louise Bradley, and Pascal Landais
Opt. Express 21(6) 7180-7195 (2013)

Operation of quantum-dot semiconductor optical amplifiers under nonuniform current injection

Hussein Taleb, Kambiz Abedi, and Saeed Golmohammadi
Appl. Opt. 50(5) 608-617 (2011)

Saturated signal-to-noise ratio of up-stream WRC-FPLD transmitter injection-locked by down-stream data-erased ASE carrier

Yi-Hung Lin, Chun-Ju Lin, Gong-Cheng Lin, and Gong-Ru Lin
Opt. Express 19(5) 4067-4075 (2011)

High-speed pulse train amplification in semiconductor optical amplifiers with optimized bias current

Mingjun Xia, H. Ghafouri-Shiraz, Lianping Hou, and Anthony E. Kelly
Appl. Opt. 56(4) 1079-1086 (2017)

Low polarization-sensitive asymmetric multi-quantum well semiconductor amplifier for next-generation optical access networks

Julie E. Nkanta, Ramón Maldonado-Basilio, Kaiser Khan, Abdessamad Benhsaien, Sawsan Abdul-Majid, Jessica Zhang, and Trevor J. Hall
Opt. Lett. 38(16) 3165-3168 (2013)