Abstract

We present an experimental investigation of a multicontact semiconductor optical amplifier. This first-generation device allows for direct control of the carrier density profile along the length of the waveguide. This is used to control the device noise figure, with a minimum value of $5\mathrm{dB}$ observed at a gain of $15\mathrm{dB}$ for an optimum carrier density profile. The opposite carrier density profile results in an increase of the power saturation by $3\mathrm{dB}$.

© 2011 Optical Society of America

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