Abstract

Although great efforts have been made, reproducible p-type doping is still one of the largest hurdles that hinders the optoelectronic applications of ZnO. In this Letter, a reproducible route to p-type ZnO films employing lithium–nitrogen as a dual-acceptor dopant has been demonstrated, and p-i-n structured light-emitting devices (LEDs) have been constructed. Obvious purple emissions have been observed from the LEDs, confirming the applicability of the p-type ZnO films in optoelectronic devices. The results reported in this Letter provide a reproducible route to p-type ZnO films, and thus may lay a solid ground for future optoelectronic applications of ZnO.

© 2011 Optical Society of America

MgZnO p–n heterostructure light-emitting devices

Ji-Shan Liu, Chong-Xin Shan, Bing-Hui Li, Zhen-Zhong Zhang, Ke-Wei Liu, and De-Zhen Shen
Opt. Lett. 38(12) 2113-2115 (2013)

p-type doping of MgZnO films and their applications in optoelectronic devices

C. X. Shan, J. S. Liu, Y. J. Lu, B. H. Li, Francis C. C. Ling, and D. Z. Shen
Opt. Lett. 40(13) 3041-3044 (2015)

Homogeneous ZnO nanowire arrays p-n junction for blue light-emitting diode applications

Mingming Su, Tanglei Zhang, Jun Su, Zhao Wang, Yongming Hu, Yihua Gao, Haoshuang Gu, and Xianghui Zhang
Opt. Express 27(16) A1207-A1215 (2019)

Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO₂ nanocomposite light-emitting devices

Jiun-Ting Chen, Wei-Chih Lai, Chi-Heng Chen, Ya-Yu Yang, Jinn-Kong Sheu, and Li-Wen Lai
Opt. Express 19(12) 11873-11879 (2011)

Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme

Chun-Ying Huang, Ya-Ju Lee, Tai-Yuan Lin, Shao-Lun Chang, Jan-Tian Lian, Hsiu-Mei Lin, Nie-Chuan Chen, and Ying-Jay Yang
Opt. Lett. 39(4) 805-808 (2014)