Abstract
An ultraviolet photodetector was fabricated based on heterojunction. N, N’-bis (naphthalen-1-y1)-N, N’-bis(pheny) benzidine was selected as the hole transporting layer. I-V characteristic curves of the device were measured in the dark and under the illumination of 340 nm UV light with density of . The device showed a low dark current of about and a high photo-dark current ratio of at bias. A narrowband photoresponse was observed from 300 to 400 nm and centered at 340 nm with a full width at half-maximum of only 30 nm. The maximum peak response is at 340 nm, which is at the bias of .
© 2012 Optical Society of America
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