Abstract
Defect-mediated subbandgap absorption is observed in ion-implanted silicon-on-oxide waveguides that experience a rapid thermal annealing at 1075°C. With this effect, general carrier-depletion silicon modulators exhibit the capability of optical power monitoring. Responsivity is measured to be for a 3 mm long Mach–Zehnder modulator of doping concentration at bias voltage and for a ring modulator of doping concentration at bias voltage. The former is used to demonstrate data detection of up to .
© 2012 Optical Society of America
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