Abstract

We studied infrared normal spectral emissivity on quasi-periodic microstructured silicon, which was prepared by femtosecond laser irradiation in ${\mathrm{SF}}_6$ ambient gas, coated with 100 nm thick Au thin film. The observed emissivity is higher than any reported previously for a flat material with a thickness of less than 0.5 mm, at a temperature range of 200 °C to 400 °C. The emissivity over the measured wavelength region increases with temperature and the spike height. These results show the potential to be used as a flat blackbody source or for applications in infrared thermal sensor, detector, and stealth military technology.

©2012 Optical Society of America

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