Abstract

Strong white electroluminescence (EL) from SiN-based devices containing Si nanodots with a density of more than $4.6\times {10}^{12}/{\mathrm{cm}}^2$ was investigated. The white EL illustrates enhanced light emission with increasing applied voltage and can be divided into two components, a dominant peak at $\sim 710\mathrm{nm}$ and weak one at $\sim 550\mathrm{nm}$, which are close to those of the PL spectra optically pumped by the 325 and 488 nm lines, respectively. Based on the PL characteristics, we propose that the dominant EL band arises from the band-to-band recombination in the dense Si nanodots where quantum confinement plays a decisive role in the light emission, whereas the weak EL band originates from the radiative Si dangling bond ($K^0$) centers in the silicon nitride matrix.

©2012 Optical Society of America

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