Abstract

A kind of photoluminescence quenching, in which the time-resolved photoluminescence is modulated by a THz pulse, has been theoretically investigated by performing the ensemble Monte Carlo method in bulk gallium arsenide (GaAs) at room temperature. The quenching ratio could reach up to 50% under a strong THz field ($100\mathrm{kV}/\mathrm{cm}$). The range in which luminescence quenching is linearly proportional to the THz field could be over $60\mathrm{kV}/\mathrm{cm}$. On the basis of these results, a principle for THz modulation and coherent detection is proposed.

©2012 Optical Society of America

Carrier density dependence of the nonlinear absorption of intense THz radiation in GaAs

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