Abstract

By employing an insulating zinc oxide ($i$-ZnO) as an electron accelerating layer, and an $n$-type ZnO as an active layer, ultraviolet (UV) emissions at 385 nm caused by the excitation of the $n$-ZnO layer by the accelerated electrons from the $i$-ZnO layer have been realized. By replacing the active layer with larger bandgap ${\mathrm{Mg}}_{0.39}{\mathrm{Zn}}_{0.61}\mathrm{O}$ and properly optimizing the structure, shorter wavelength emissions at around 328 nm have been obtained. Considering that the $p$-type doping of wide bandgap semiconductors is still a challenging issue, the results reported in this Letter may provide a promising alternative route to UV emissions.

©2012 Optical Society of America

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