Abstract

We report nano-needle structured conductive ${\mathrm{SnO}}_x$ ($x\le 1$) as a self-assembled electrode for high-efficiency light trapping in thin-film infrared (IR) photonic devices, benefiting from the high scattering efficiency, high density, and low IR loss of the nano-needles. We demonstrate a $2.2\times$ responsivity enhancement for a 1.5-μm-thick Ge absorber in a nano-needled ${\mathrm{p}}^{+}{\mathrm{SnO}}_x/\mathrm{n}\text{-}\mathrm{Ge}$ photodiode on Si at $\lambda =1580\mathrm{nm}$, in good agreement with theoretical calculation of $2.3\times$ enhancement assuming no IR loss in the nano-needles. Such low-loss light trapping can potentially enable $15–30\times$ absorption enhancement at $\lambda =1600–1650\mathrm{nm}$ in the Ge layer when integrated with a perfect rear reflector.

© 2015 Optical Society of America

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