Abstract

We present an electro-absorption modulator based on the enhanced electro-optic effect of an asymmetric coupled triple quantum well (ACTQW) to achieve a large transmittance difference at a low driving voltage for high-definition (HD) three-dimensional (3D) imaging applications. Our numerical calculations show that an ACTQW structure can provide a significantly lower-voltage operation without degrading the absorption coefficient change at the operating wavelength of 850 nm. The fabricated electro-absorption modulator (EAM) based on an ACTQW shows that the operating voltage can be reduced by nearly 50% compared with an EAM based on a conventional rectangular quantum well while also achieving a large transmittance difference in excess of 50%, which is in good agreement with the numerical calculation results. These results suggest that using an EAM with an ACTQW is a promising approach for the realization of a high-resolution 3D imaging system.

© 2015 Optical Society of America

Coupled tandem cavities based electro-absorption modulator with asymmetric tandem quantum well for high modulation performance at low driving voltage

Byung Hoon Na, Gun Wu Ju, Hee Ju Choi, Soo Kyung Lee, Sooraj Ravindran, Yong Chul Cho, Yong Hwa Park, Chang Young Park, and Yong Tak Lee
Opt. Express 21(23) 27924-27932 (2013)

Wide spectral bandwidth electro-absorption modulator using coupled micro-cavity with asymmetric tandem quantum well

Byung Hoon Na, Gun Wu Ju, Hee Ju Choi, Yong Chul Cho, Yong Hwa Park, Chang Young Park, and Yong Tak Lee
Opt. Express 20(17) 19511-19519 (2012)

Large aperture asymmetric Fabry Perot modulator based on asymmetric tandem quantum well for low voltage operation

Byung Hoon Na, Gun Wu Ju, Hee Ju Choi, Yong Chul Cho, Yong Hwa Park, and Yong Tak Lee
Opt. Express 20(6) 6003-6009 (2012)

Theoretical analysis of electro-refractive index variation in asymmetric Ge/SiGe coupled quantum wells

Yi Zhang, Junqiang Sun, and Jianfeng Gao
Opt. Express 25(24) 30032-30042 (2017)

Electro-optical effects in strain-compensated InGaAs/InAlAs coupled quantum wells with modified potential

Zhixin Xu, Changrong Wang, Wei Qi, and Zhefeng Yuan
Opt. Lett. 35(5) 736-738 (2010)