Abstract
We propose and demonstrate a new method for evaluating the afterpulsing effect in single-photon avalanche photodiodes (SPADs). By analyzing the statistical property of dark count rate, we can quantitatively characterize afterpulsing probability (APP) of a SPAD. In experiment, the temperature-dependent low dark count rate (DCR) distribution becomes non-Poissonian at lower temperature and has higher excess bias as the afterpulsing effect becomes significant. Our work provides a flexible way to examine APP in either single-device or circuit level.
© 2015 Optical Society of America
Full Article | PDF ArticleMore Like This
Shingo Mandai, Matthew W. Fishburn, Yuki Maruyama, and Edoardo Charbon
Opt. Express 20(6) 5849-5857 (2012)
Myung-Jae Lee, Pengfei Sun, and Edoardo Charbon
Opt. Express 23(10) 13200-13209 (2015)
Lin Qi, S. Sluyterman, K. Kooijman, K. R. C. Mok, and Lis K. Nanver
Opt. Lett. 40(3) 300-303 (2015)