Abstract

We demonstrate the growth, spectroscopy, and laser performance of a 2.79 μm Cr,Er,Pr:GYSGG radiation-resistant crystal. The lifetimes for the upper laser level ${}^4{\mathrm{I}}_{11/2}$ and lower laser level ${}^4{\mathrm{I}}_{13/2}$ are 0.59 and 0.84 ms, respectively, which are due to the doping of the ${\mathrm{Pr}}^{3+}$ ions. A maximum pulse energy of 278 mJ operated at 10 Hz and 2.79 μm is obtained when pumped with a flash lamp, which corresponds to the electrical-to-optical efficiency of 0.6% and a slope efficiency of 0.7%. A maximum average power of 2.9 W at 60 Hz is achieved, which corresponds to the electrical-to-optical efficiency of 0.4% and slope efficiency of 0.8%. Compared with a Cr,Er:YSGG crystal, the Cr,Er,Pr:GYSGG crystal can be operated at a higher pulse repetition rate. These results suggest that doping deactivator ${\mathrm{Pr}}^{3+}$ ions can effectively decrease the lower laser level lifetime and improve the laser repetition rate. Therefore, the application fields and range of the Cr,Er,Pr:GYSGG laser can be extended greatly due to its properties of radiation resistance and high repetition frequency.

© 2015 Optical Society of America

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