Abstract
We demonstrate the growth, spectroscopy, and laser performance of a 2.79 μm Cr,Er,Pr:GYSGG radiation-resistant crystal. The lifetimes for the upper laser level and lower laser level are 0.59 and 0.84 ms, respectively, which are due to the doping of the ions. A maximum pulse energy of 278 mJ operated at 10 Hz and 2.79 μm is obtained when pumped with a flash lamp, which corresponds to the electrical-to-optical efficiency of 0.6% and a slope efficiency of 0.7%. A maximum average power of 2.9 W at 60 Hz is achieved, which corresponds to the electrical-to-optical efficiency of 0.4% and slope efficiency of 0.8%. Compared with a Cr,Er:YSGG crystal, the Cr,Er,Pr:GYSGG crystal can be operated at a higher pulse repetition rate. These results suggest that doping deactivator ions can effectively decrease the lower laser level lifetime and improve the laser repetition rate. Therefore, the application fields and range of the Cr,Er,Pr:GYSGG laser can be extended greatly due to its properties of radiation resistance and high repetition frequency.
© 2015 Optical Society of America
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