Abstract

High-performance injection microdisk (MD) lasers grown on Si substrate are demonstrated for the first time, to the best of our knowledge. Continuous-wave (CW) lasing in microlasers with diameters from 14 to 30 μm is achieved at room temperature. The minimal threshold current density of $600\mathrm{A}/{\mathrm{cm}}^2$ (room temperature, CW regime, heatsink-free uncooled operation) is comparable to that of high-quality MD lasers on GaAs substrates. Microlasers on silicon emit in the wavelength range of 1320–1350 nm via the ground state transition of InAs/InGaAs/GaAs quantum dots. The high stability of the lasing wavelength ($d\lambda /dI=0.1\mathrm{nm}/\mathrm{mA}$) and the low specific thermal resistance of $4\times {10}^{-3}°\mathrm{C}\times {\mathrm{cm}}^2/\mathrm{W}$ are demonstrated.

© 2017 Optical Society of America

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