Abstract

We report on a semiconductor saturable absorber mirror mode-locked $\mathrm{Nd}\text{:}{\mathrm{YVO}}_4$ laser operating at discretely selectable 1064.0, 1073.0, 1085.1 nm wavelengths with the average output powers of more than 2.2 W at each of the three wavelengths. The optical-to-optical efficiencies and the slope efficiencies were larger than 19% and 29% for each of the three wavelengths, and the pulse durations at the highest output powers were 13.1, 10.3, and 8.4 ps, respectively.

© 2017 Optical Society of America

Diode-pumped Nd:YVO₄ laser with discrete multi-wavelength tunability and high efficiency

Tanant Waritanant and Arkady Major
Opt. Lett. 42(6) 1149-1152 (2017)

High-power 880-nm diode-directly-pumped passively mode-locked Nd:YVO₄ laser at 1342 nm with a semiconductor saturable absorber mirror

Fang-Qin Li, Ke Liu, Lin Han, Nan Zong, Yong Bo, Jing-Yuan Zhang, Qin-Jun Peng, Da-Fu Cui, and Zu-Yan Xu
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7.6  W 1342  nm passively mode-locked picosecond composite Nd:YVO₄/YVO₄ laser with a semiconductor saturable absorber mirror

Wei Tu, Ying Chen, Nan Zong, Ke Liu, Zhi-Min Wang, Feng-Feng Zhang, Shen-Jin Zhang, Feng Yang, Lei Yuan, Yong Bo, Qin-Jun Peng, Da-Fu Cui, and Zu-Yan Xu
Appl. Opt. 54(11) 3389-3392 (2015)

4-ps passively mode-locked Nd:Gd_0.5Y_0.5VO₄ laser with a semiconductor saturable-absorber mirror

Jing-Liang He, Ya-Xian Fan, Juan Du, Yong-Gang Wang, Sheng Liu, Hui-Tian Wang, Lian-Han Zhang, and Yin Hang
Opt. Lett. 29(23) 2803-2805 (2004)

Passive mode locking of a diode-end-pumped Nd:GdVO₄ laser with a semiconductor saturable absorber mirror

Bingyuan Zhang, Gang Li, Meng Chen, Zhigang Zhang, and Yonggang Wang
Opt. Lett. 28(19) 1829-1831 (2003)