Abstract

Polycrystalline 2D layered molybdenum disulfide (${\mathrm{MoS}}_2$) films were synthesized via a thermal decomposition method. The ${\mathrm{MoS}}_2/\mathrm{Si}$ heterostructures were constructed in situ by synthesis ${\mathrm{MoS}}_2$ on plane Si substrates. Such ${\mathrm{MoS}}_2/\mathrm{Si}$ heterostructures exhibited high sensitivity to light illumination with wavelengths ranging from the deep ultraviolet to the near infrared. Photoresponse analysis reveals that a high responsivity of 23.1 A/W, a specific detectivity of $1.63\times {10}^{12}$ Jones, and a fast response speed of 21.6/65.5 μs were achieved. Notably, the ${\mathrm{MoS}}_2/\mathrm{Si}$ heterojunction photodetector could operate with excellent stability and repeatability over a wide frequency range up to 150 kHz. The high performance could be attributed to the high-quality heterojunction between ${\mathrm{MoS}}_2$ and Si obtained by the in situ fabrication process. Such high performance with broadband response suggests that ${\mathrm{MoS}}_2/\mathrm{Si}$ heterostructures could have great potential in optoelectronic applications.

© 2017 Optical Society of America

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