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Facile fabrication of flexible graphene FETs by sunlight reduction of graphene oxide

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Abstract

We reported here a facile fabrication of flexible graphene-based field effect transistors (FETs) by sunlight reduction of graphene oxide (GO) as channel material. As a mask-free and chemical-free method, sunlight photoreduction of GO without the use of any complex equipments is simple and green. The resultant FET demonstrated excellent electrical properties (e.g., an optimized Ion/Ioff ratio of 111, hole mobility of 0.17cm2V1s1), revealing great potential for development of flexible microelectrics. Additionally, since the reduced GO channel could be fabricated by sunlight treatment between two pre-patterned electrodes, the process features post-fabrication capability, which makes it possible to integrate graphene-based devices with given device structures.

© 2017 Optical Society of America

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